A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL
MAXIM
UNITS
NF
F = 9375 MHz P
lo
= 1.0 mW N
Fif
= 1.5 dB
R
L
= 100
I
F
= 30 MHz
7.5
dB
V
SWR
1.3
Z
IF
R
L
= 22
f = 1000 Hz
335
465
frange
8.0
12.4 GHz
SILICON MIXER DIODE
1N415E
DESCRIPTION:
The
ASI 1N415E
is a Silicon Mixer
Diode Designed for Applications
Operating From 8.0 to 12.4 GHz.
FEATURES:
High burnout resistance
Low noise figure
Hermetically sealed package
MAXIMUM RATINGS
I
F
20 mA
V
R
1.0 V
P
DISS
2.0
(ERGS)
@ T
C
= 25 C
T
J
-55 C to +150 C
T
STG
-55 C to +150 C
PACKAGE STYLE DO- 23
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