A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
1/3
Specifications are subject to change without notice.
ELECTRICAL CHARACTERISTICS
T
C
= 25
O
C
SYMBOL TEST
CONDITIONS MINIMUM
TYPICAL
MAXIMUM
UNITS
I
P
ASTD 1020
100
200
A
ASTD 2030
200
300
ASTD 3040
300
400
ASTD 4050
400
500
ASTD 5060
500
600
V
F
I
F
= 3 mA ASTD 1020
135
mV
ASTD 2030
130
ASTD 3040
125
ASTD 4050
120
ASTD 5060
110
V
R
I
R
= 500
A
400 mV
PLANAR TUNNEL (BACK) DIODE
ASTD SERIES
DESCRIPTION:
The
ASTD
Series of Tunnel Diodes
are Optimized for Operation as Back
Diode Detectors in Applications up
to 18 GHz.
FEATURES INCLUDE:
Excellent Temperature Stability
Fast Rise / Fall Times
Available in Die Form
MAXIMUM RATINGS
I
R
10 mA
P
DISS
3 ERG spike
P
DISS
50 mW @ T
A
= +60
O
C
T
J
-65 to +110
O
C
T
STG
-65 to +125
O
C
PACKAGE STYLE 51
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
2/3
ASTD SERIES
PLANAR TUNNEL (BACK) DIODE
Specifications are subject to change without notice.
DYNAMIC ELECTRICAL CHARACTERISTICS
T
C
= 25
O
C
Symbol Test
Conditions
Minimum
Typical
Maximum
Units
F = 10 GHz R
L
= 10 K
ASTD 1020
1,000
mV/mW
P
IN
= -20 dBm ASTD 2030
750
ASTD 3040
500
ASTD 4050
275
ASTD 5060
250
R
V
F = 10 GHz R
L
= 10 K
ASTD 1020
180
P
IN
= -20 dBm ASTD 2030
130
ASTD 3040
80
ASTD 4050
65
ASTD 5060
60
R
S
I
R
= 10 mA F = 100 MHz
7.0
ORDERING INFORMATION:
ASTD-XXXX-XX
_____ 51 = Case Style 51
820 = Case Style 820
860 = Case Style 860
__________ 1020
2030
3040
4050
5060
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
3/3
ASTD SERIES
PLANAR TUNNEL (BACK) DIODE
Specifications are subject to change without notice.
PACKAGE STYLE 820
PACKAGE STYLE 860
PDF 
ZIP