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Электронный компонент: UFT15-28S

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 50 mA
35
V
BV
CER
I
C
= 50 mA R
BE
= 10
60
V
BV
EBO
I
E
= 10 mA
4.0
V
I
CES
V
E
= 28 V
5
mA
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
10
100
---
C
ob
V
CB
= 28 V f = 1.0 MHz
80
pF
P
GE
IMD
3
V
CE
= 25 V I
CQ
= 3.2 A f = 225 MHz
P
REF
= 16 W Vision = -8 dB Snd. = -7 dB
Side Band = -16 dB
13.5
14.5
-55
dB
dBc
NPN SILICON RF POWER TRANSISTOR
UFT15-28S
DESCRIPTION:
The
ASI UFT15-28S
is Designed for

FEATURES:
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
10 A
V
CB
60 V
V
CE
35 V
P
DISS
140 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C

JC
1.5
O
C/W
PACKAGE STYLE .380 4L STUD















ORDER CODE: ASI10665
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H
.090 / 2.29
.100 / 2.54
DIM
.220 / 5.59
.230 / 5.84
.490 / 12.45
.450 / 11.43
I
J
.155 / 3.94
.175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E
F
D
C
B
.112x45
G
H
J
I
A
#8-32 UNC-2A