A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 5.0 mA
20
V
BV
CER
I
C
= 5.0 mA R
BE
= 10
40
V
BV
EBO
I
E
= 100
A
2.0
V
I
CEO
V
CE
= 12 V
0.2
mA
h
FE
V
CE
= 5.0 V I
C
= 100 mA
10
200
---
V
CE(SAT)
I
C
= 100 mA I
B
= 20 mA
0.5
Vdc
C
OB
V
CB
= 12.5 V f = 1.0 MHz
4.0
pF
P
G
C
V
CE
= 12.5 V P
OUT
= 1.0 W f = 175 MHz
10
60
dB
%
NPN SILICON RF POWER TRANSISTOR
VHB1-12T
DESCRIPTION:
The
ASI VHB1-12T
is Designed for
FEATURES:
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
400 mA
(MAX)
V
CBO
40 V
V
CEO
20 V
V
CER
40 V
V
EBO
2.0 V
P
DISS
3.5 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +200
O
C
JC
20
O
C/W
PACKAGE STYLE TO-39
ORDER CODE: ASI10711
A
D
45
C
B
F
E
G
H
MINIMUM
inches / mm
.029 / 0.740
.335 / 8.510
.200 / 5.080
.028 / 0.720
.305 / 7.750
.240 / 6.100
B
C
D
E
F
G
A
MAXIMUM
.034 / 0.860
.335 / 8.500
.260 / 6.600
.370 / 9.370
inches / mm
.045 / 1.140
.500 / 12.700
H
.016 / 0.407
.020 / 0.508
DIM
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