A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 100 mA
60
V
BV
CER
I
C
= 100 mA R
BE
= 10
55
V
BV
CEO
I
C
= 100 mA
25
V
BV
EBO
I
E
= 20 mA
4.0
V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
20
150
---
C
OB
V
CB
= 28 V f = 1.0 MHz
140
pF
P
G
C
V
CC
= 28 V P
OUT
= 150 W f = 108 MHz
9.0
65
dB
%
NPN SILICON RF POWER TRANSISTOR
FMB150
DESCRIPTION:
The
ASI FMB150
is Designed for
FEATURES:
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
16 A
V
CBO
60 V
V
CEO
25 V
V
CES
60 V
V
EBO
4.0 V
P
DISS
230 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
JC
1.1
O
C/W
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10588
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H
.003 / 0.08
.007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
.495 / 12.57
.505 / 12.83
.280 / 7.11
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