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Электронный компонент: AT89C51RB2

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AT89C51RB2 / RC2 & T89C51IC2 QualPack

Rev. 1 2002 June
1
Qualification Package
AT89C51RB2 / RC2 & T89C51IC2
FLASH C51 Microcontrollers











AT89C51RB2 / RC2 & T89C51IC2
June 2002
AT89C51RB2 / RC2 & T89C51IC2 QualPack

Rev. 1 2002 June
2
1 Table of contents

1
TABLE OF CONTENTS ....................................................................................................................................................2
2
GENERAL INFORMATION.............................................................................................................................................3
3
TECHNOLOGY INFORMATION...................................................................................................................................4
3.1
W
AFER
P
ROCESS
T
ECHNOLOGY
....................................................................................................................................4
3.2
P
RODUCT
D
ESIGN
..........................................................................................................................................................5
3.3
D
EVICE CROSS SECTION
.................................................................................................................................................6
4
QUALIFICATION ..............................................................................................................................................................7
4.1
Q
UALIFICATION METHODOLOGY
....................................................................................................................................7
4.2
Q
UALIFICATION TEST METHODS
.....................................................................................................................................8
4.3
W
AFER
L
EVEL
R
ELIABILITY
..........................................................................................................................................9
4.3.1
Electromigration.......................................................................................................................................................9
4.3.2
Hot carriers injection .............................................................................................................................................11
4.3.3
Time Dependent Dielectric Breakdown..................................................................................................................12
4.3.4
FLASH characteristics ...........................................................................................................................................14
4.3.4.1
Cell endurance .................................................................................................................................................................14
4.3.4.2
Cell retention ...................................................................................................................................................................15
4.3.4.3
Cell Read Disturb ............................................................................................................................................................16
4.3.4.4
Wafer probe Data retention measurement........................................................................................................................17
4.4
D
EVICE RELIABILITY
....................................................................................................................................................18
4.4.1
AT89C51RC2 tests..................................................................................................................................................18
4.4.2
AT89C51RC2 reliability calculation ......................................................................................................................19
4.5
P
ACKAGING RELIABILITY
.............................................................................................................................................20
4.6
Q
UALIFICATION STATUS
..............................................................................................................................................20
5
ENVIRONMENTAL INFORMATION ..........................................................................................................................21
6
OTHER DATA ..................................................................................................................................................................22
6.1
ISO9001
AND
QS9000 C
ERTIFICATES
.........................................................................................................................22
6.2
D
ATA
B
OOK
R
EFERENCE
.............................................................................................................................................23
6.3
R
EVISION
H
ISTORY
......................................................................................................................................................23







AT89C51RB2 / RC2 & T89C51IC2 QualPack

Rev. 1 2002 June
3
2 General Information
Product Name:
AT89C51RC2 / RB2
Function:
8-bit Microcontrollers with 32KB / 16KB FLASH

Product Name:
T89C51IC2
Function:
8-bit Microcontroller with 32KB FLASH
Two Wires Interface (TWI), 32KHz Oscillator
Wafer Process:
Logic CMOS 0.35um with embedded FLASH

Available Package Types
PLCC 44, VQFP 44 1.4mm, PDIL40
(not available for T89C51IC2)
Other Forms:
Die, Wafer

Locations:
Process Development,
Atmel Colorado Springs, USA
Product Development
Atmel Nantes, France
Wafer Plant
Atmel Colorado Springs, USA
QC Responsibility
Atmel Nantes, France
Probe Test
Atmel Colorado Springs, USA
Assembly
Dependant upon Package
Final Test
Dependant upon Package
Lot Release
Atmel Nantes, France
Shipment Control
Global Logistic Center, Philippines
Quality Assurance
Atmel Nantes, France
Reliability Testing
Atmel Nantes, France
Failure Analysis
Atmel Nantes, France




Quality Management
Atmel Nantes, France


Signed: Pascal LECUYER
AT89C51RB2 / RC2 & T89C51IC2 QualPack

Rev. 1 2002 June
4
3 Technology Information
3.1 Wafer Process Technology

Process Type (Name):
Logic 0.35um with embedded FLASH (AT56800)

Base Material:
Epitaxied Silicon
Wafer Thickness (final)
475um
Wafer Diameter
150mm

Number Of Masks
27

Gate Oxide (Logic transistors)
Material
Silicon Dioxide
Thickness
68 A
Gate Oxide (EPROM cell)
Material
Silicon Dioxide
Thickness
390 A



Polysilicon
Number of Layers
2
Thickness Poly 1
1400A Amorphous
Thickness Poly 2
3200A
Metal
Number of Layers
3
Material:
AlCu
Layer 1 Thickness
5000A
Layer 2 Thickness
5000A
Layer 3 Thickness
8000A


Passivation
Material
Oxide HDP/ Oxynitride
Thickness
21000A
AT89C51RB2 / RC2 & T89C51IC2 QualPack

Rev. 1 2002 June
5
3.2 Product Design

Die Size
14.13 mm
2
Pad Size Openning / Pitch
79um * 91um
/ 126um

Logic Effective Channel Length
0.35
m

Gate Poly Width (min.)
0.35
m
Gate Poly Spacing (min.)
0.42
m

Metal 1 Width
0.42
m
Metal 1 Spacing
0.49
m
Metal 2 Width
0.56
m
Metal 2 Spacing
0.49
m
Metal 3 Width
0.56
m
Metal 3 Spacing
0.49
m


Contact Size
0.35
m
Contact Spacing
0.42
m

Via 1 Size
0.42
m
Via 2 Size
0.42
m