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Электронный компонент: AT93C56-10C-2.5

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1
Features
Low-voltage and Standard-voltage Operation
2.7 (V
CC
= 2.7V to 5.5V)
2.5 (V
CC
= 2.5V to 5.5V)
1.8 (V
CC
= 1.8V to 5.5V)
User-selectable Internal Organization
1K: 128 x 8 or 64 x 16
2K: 256 x 8 or 128 x 16
4K: 512 x 8 or 256 x 16
3-wire Serial Interface
2 MHz Clock Rate (5V)
Self-timed Write Cycle (10 ms max)
High Reliability
Endurance: 1 Million Write Cycles
Data Retention: 100 Years
Automotive Grade, Extended Temperature and Lead-Free Devices Available
8-lead PDIP, 8-lead JEDEC SOIC, 8-lead EIAJ SOIC, 8-lead MAP and 8-lead TSSOP
Packages
Description
The AT93C46/56/66 provides 1024/2048/4096 bits of serial electrically erasable pro-
grammable read only memory (EEPROM) organized as 64/128/256 words of 16 bits
each, when the ORG pin is connected to VCC and 128/256/512 words of 8 bits each
when it is tied to ground. The device is optimized for use in many industrial and com-
mercial applications where low power and low voltage operations are essential. The
AT93C46/56/66 is available in space-saving 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead
EIAJ SOIC, 8-lead MAP and 8-lead TSSOP packages.
3-wire Serial
EEPROMs
1K (128 x 8 or 64 x 16)
2K (256 x 8 or 128 x 16)
4K (512 x 8 or 256 x 16)
AT93C46
AT93C56
AT93C66
Rev. 0172SSEEPR01/03
Pin Configurations
Pin Name
Function
CS
Chip Select
SK
Serial Data Clock
DI
Serial Data Input
DO
Serial Data Output
GND
Ground
VCC
Power Supply
ORG
Internal Organization
DC
Don't Connect
8-lead PDIP
1
2
3
4
8
7
6
5
CS
SK
DI
DO
VCC
DC
ORG
GND
8-lead SOIC
Rotated (R)
(1K JEDEC Only)
1
2
3
4
8
7
6
5
DC
VCC
CS
SK
ORG
GND
DO
DI
8-lead SOIC
1
2
3
4
8
7
6
5
CS
SK
DI
DO
VCC
DC
ORG
GND
(continued)
8-lead TSSOP
1
2
3
4
8
7
6
5
CS
SK
DI
DO
VCC
DC
ORG
GND
8-lead MAP
Bottom View
1
2
3
4
8
7
6
5
VCC
DC
ORG
GND
CS
SK
DI
DO
2
AT93C46/56/66
0172SSEEPR01/03
The AT93C46/56/66 is enabled through the Chip Select pin (CS), and accessed via a 3-wire serial interface consisting of
Data Input (DI), Data Output (DO), and Shift Clock (SK). Upon receiving a READ instruction at DI, the address is decoded
and the data is clocked out serially on the data output pin DO. The WRITE cycle is completely self-timed and no separate
ERASE cycle is required before WRITE. The WRITE cycle is only enabled when the part is in the ERASE/WRITE ENABLE
state. When CS is brought "high" following the initiation of a WRITE cycle, the DO pin outputs the READY/BUSY status of
the part.
The AT93C46/56/66 is available in 2.7V to 5.5V and 1.8V to 5.5V versions.
Block Diagram
Note:
1. When the ORG pin is connected to VCC, the x 16 organization is selected. When it is connected to ground, the x 8 organiza-
tion is selected. If the ORG pin is left unconnected and the application does not load the input beyond the capability of the
internal 1 Meg ohm pullup, then the x 16 organization is selected. The feature is not available on the 1.8V devices.
2. For the AT93C46, if x 16 organization is the mode of choice and Pin 6 (ORG) is left unconnected, Atmel recommends using
the AT93C46A device. For more details, see the AT93C46A datasheet.
Absolute Maximum Ratings*
Operating Temperature .................................. -55
C to +125C
*NOTICE:
Stresses beyond those listed under "Absolute
Maximum Ratings" may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Storage Temperature ..................................... -65
C to +150C
Voltage on Any Pin
with Respect to Ground .....................................-1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
3
AT93C46/56/66
0172SSEEPR01/03
Note:
1. This parameter is characterized and is not 100% tested.
Note:
1. V
IL
min and V
IH
max are reference only and are not tested.
Pin Capacitance
(1)
Applicable over recommended operating range from T
A
= 25
C, f = 1.0 MHz, V
CC
= +5.0V (unless otherwise noted).
Symbol
Test Conditions
Max
Units
Conditions
C
OUT
Output Capacitance (DO)
5
pF
V
OUT
= 0V
C
IN
Input Capacitance (CS, SK, DI)
5
pF
V
IN
= 0V
DC Characteristics
Applicable over recommended operating range from: T
AI
= -40
C to +85C, V
CC
= +1.8V to +5.5V,
T
AE
= -40
C to +125C, V
CC
= +1.8V to +5.5V (unless otherwise noted).
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
V
CC1
Supply Voltage
1.8
5.5
V
V
CC2
Supply Voltage
2.5
5.5
V
V
CC3
Supply Voltage
2.7
5.5
V
V
CC4
Supply Voltage
4.5
5.5
V
I
CC
Supply Current
V
CC
= 5.0V
READ at 1.0 MHz
0.5
2.0
mA
WRITE at 1.0 MHz
0.5
2.0
mA
I
SB1
Standby Current
V
CC
= 1.8V
CS = 0V
0
0.1
A
I
SB2
Standby Current
V
CC
= 2.5V
CS = 0V
6.0
10.0
A
I
SB3
Standby Current
V
CC
= 2.7V
CS = 0V
6.0
10.0
A
I
SB4
Standby Current
V
CC
= 5.0V
CS = 0V
17
30
A
I
IL
Input Leakage
V
IN
= 0V to V
CC
0.1
1.0
A
I
OL
Output Leakage
V
IN
= 0V to V
CC
0.1
1.0
A
V
IL1
(1)
V
IH1
(1)
Input Low Voltage
Input High Voltage
2.7V
V
CC
5.5V
-0.6
2.0
0.8
V
CC
+ 1
V
V
IL2
(1)
V
IH2
(1)
Input Low Voltage
Input High Voltage
1.8V
V
CC
2.7V
-0.6
V
CC
x 0.7
V
CC
x 0.3
V
CC
+ 1
V
V
OL1
V
OH1
Output Low Voltage
Output High Voltage
2.7V
V
CC
5.5V
I
OL
= 2.1 mA
0.4
V
I
OH
= -0.4 mA
2.4
V
V
OL2
V
OH2
Output Low Voltage
Output High Voltage
1.8V
V
CC
2.7V
I
OL
= 0.15 mA
0.2
V
I
OH
= -100 A
V
CC
- 0.2
V
4
AT93C46/56/66
0172SSEEPR01/03
Note:
1. This parameter is characterized and is not 100% tested.
AC Characteristics
Applicable over recommended operating range from T
AI
= -40C to + 85C, T
AE
= -40
C to +125C, V
CC
= As Specified,
CL = 1 TTL Gate and 100 pF (unless otherwise noted).
Symbol
Parameter
Test Condition
Min
Typ
Max
Units
f
SK
SK Clock
Frequency
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
0
0
0
0
2
1
0.5
0.25
MHz
t
SKH
SK High Time
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
SKL
SK Low Time
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
CS
Minimum CS
Low Time
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
CSS
CS Setup Time
Relative to SK
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
50
50
100
200
ns
t
DIS
DI Setup Time
Relative to SK
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
100
100
200
400
ns
t
CSH
CS Hold Time
Relative to SK
0
ns
t
DIH
DI Hold Time
Relative to SK
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
100
100
200
400
ns
t
PD1
Output Delay to `1'
AC Test
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
PD0
Output Delay to `0'
AC Test
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
SV
CS to Status Valid
AC Test
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
DF
CS to DO in High
Impedance
AC Test
CS = V
IL
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
100
100
200
400
ns
t
WP
Write Cycle Time
10
ms
4.5V
V
CC
5.5V
3
ms
Endurance
(1)
5.0V, 25C, Page Mode
1M
Write Cycles
5
AT93C46/56/66
0172SSEEPR01/03
Instruction Set for the AT93C46
Instruction
SB
Op
Code
Address
Data
Comments
x 8
x 16
x 8
x 16
READ
1
10
A
6
- A
0
A
5
- A
0
Reads data stored in memory, at
specified address.
EWEN
1
00
11XXXXX
11XXXX
Write enable must precede all
programming modes.
ERASE
1
11
A
6
- A
0
A
5
- A
0
Erase memory location A
n
- A
0
.
WRITE
1
01
A
6
- A
0
A
5
- A
0
D
7
- D
0
D
15
- D
0
Writes memory location A
n
- A
0
.
ERAL
1
00
10XXXXX
10XXXX
Erases all memory locations. Valid
only at V
CC
= 4.5V to 5.5V.
WRAL
1
00
01XXXXX
01XXXX
D
7
- D
0
D
15
- D
0
Writes all memory locations. Valid
only at V
CC
= 4.5V to 5.5V.
EWDS
1
00
00XXXXX
00XXXX
Disables all programming instructions.