1
4730ACLOCK07/03
Features
1.1 - 3.6 V Operating Voltage Range
4 Non-inverting, Tristatable Drivers for the Following Applications:
Motor Driver for Bipolar Stepper Motors in Watch/Clock Applications
Driver for Piezoelectric Transducers (Buzzer)
LED Driver
Line Driver for Medium Speed Applications
Applications
Motor Driver
Radio Controlled Clock/Watch
Line Driver for Mini Computer, Laptop
LED Driver
Relay Driver
Benefits
High Load Current at Low Supply Voltage
Replaces Several Discrete Transistors
Tri-state Operation Possible
Description
The e5130 contains 4 independent driver outputs with an ON resistance of typically
25
W
(15
W
) for the P-channel output transistors and typically 20
W
(13
W
) for the
N-channel output transistors at a supply voltage of 1.5 V (3 V). To obtain a fast transi-
tion of the outputs even for slow rise/fall time input signals, all digital inputs
(IN1 to IN4) have a Schmitt-trigger characteristic with a hysteresis of typically 50 mV. If
a higher driving capability is needed, all inputs and outputs may be connected in par-
allel. In this case the rise/fall time of the input signals IN1 to IN4 must be less than
200 ns. Due to the fast switching characteristic of the tri-statable output drivers, the
circuit is also suited as a low-voltage bus driver.
Low Voltage
CMOS Driver
Circuit
e5130
2
e5130
4730ACLOCK07/03
Pad Configuration
Figure 1. Pinning
Chip size: x = 1.08 mm, y = 1.42 mm,
Pad window: 90
90
TRI
OUT2
OUT4
OUT3
OUT1
IN3
IN2
IN1
IN4
VDD
VSS
e5130
Pin Description
Symbol Description
VDD
Positive supply voltage
VSS
Negative supply voltage
IN1 ... IN4
Digital inputs
TRI
Tri-state input
OUT1 ... OUT4
Drive outputs
3
e5130
4730ACLOCK07/03
Absolute Maximum Ratings
Absolute maximum ratings define parameter limits which, if exceeded, may permanently change or damage the device.
All inputs and outputs on circuits are highly protected against electrostatic discharges.
However, precautions to minimize build-up of electrostatic charges during handling are recommended.
The circuits are protected against supply voltage reversal for typically 5 minutes, if the current is limited to 120 mA.
Parameters
Symbol
Value
Unit
Supply voltage
V
DD
- V
SS
-0.3 to +5
V
Input voltage range, all inputs
V
I
V
SS
- 0.3 to V
DD
+ 0.3
V
Operating ambient temperature range
-20 to +70
C
Storage temperature range
-40 to +125
C
Lead temperature during soldering at 2 mm distance, 10 s
260
C
Electrical Characteristics
V
SS
= 0 V, V
DD
= +1.5 V, T
amb
= +25
C, unless otherwise specified. All voltage levels are measured with reference to V
SS
.
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Operating voltage
V
DD
1.1
3.6
V
Operating temperature
T
amb
-10
60
C
Operating current (standby)
V
DD
= 3.6 V, R
L12
= R
L34
= R
IN1 to IN4 at V
DD
or V
SS
, TRI at V
SS
I
DD
0.05
1
A
Drive Output OUT1 to OUT4
Output current
V
DD
= 1.2 V, R
L12
= R
L34
= 200
W
I
OUT
4.3
4.75
mA
Output current
V
DD
= 1.5 V, R
L12
= R
L34
= 200
W
I
OUT
5.7
6.20
mA
Output current
V
DD
= 3.0 V, R
L12
= R
L34
= 200
W
I
OUT
12
13
mA
Delay time
V
DD
= 3 V, C
L
= 50 pF
T
Dr
, T
Df
35
60
ns
Delay time
V
DD
= 1.5 V, C
L
= 50 pF
see Figure 3, note 1
T
Dr
, T
Df
80
150
ns
Rise-/fall time
V
DD
= 3 V, C
L
= 50 pF
t
r
, t
f
8
15
ns
Rise-/fall time
V
DD
= 1.5 V, C
L
= 50 pF
see Figure 3, note 2
t
r
, t
f
12
25
ns
Digital Input IN1 to IN4
Input current
V
IL
= 0 V
I
IL
-100
nA
Input current
V
IH
= V
DD
I
IH
100
nA
Threshold
V
V
TH
V
DD
/2
V
Hysteresis
mV
V
HYST
50
mV
Tristate Input TRI
Input current TRI
V
IH
= V
DD
I
IH
0.15
0.4
1.2
A
4
e5130
4730ACLOCK07/03
Figure 2. Test Circuit
Figure 3. Drive Output Delay Time
Notes:
1. t
Dr
, t
Df
is defined at 50% of supply voltage
2. t
r
, t
f
is defined from 10% to 90%, resp. 90% to 10% of supply voltage
TRI
OUT2
OUT4
OUT3
OUT1
IN3
IN2
IN1
IN4
VDD
VSS
e5130
R
L12
R
L34
t
r
IN1...4
OUT1...4
t
r
t
Dr
t
Df
5
e5130
4730ACLOCK07/03
Figure 4. Typical Current into 200
W
Load Resistor, Condition as per Figure 2
Figure 5. Typical Output ON-resistance versus Supply Voltage at V
DS
= 0.2 V
Figure 6. Pad Coordinates
1.0
1.5
2.0
2.5
0
5
10
15
I
R
L
(
m
A
)
V
DD
(V)
3.0
0
10
20
30
40
50
R
O
N
(
W
)
V
DD
(V)
1.0
1.5
2.0
2.5
3.0
N-CH Transistor
P-CH Transistor
e5130
1014.0
366.0
534.0
782.0
118.0
0
447.5
851.0
1014.0
0
0
0
778.0
610.0
389.0
221.0
10
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