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Электронный компонент: T0351

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1
Features
AMPS/Cell Band CDMA Operation
Low-current Consumption
Excellent Noise and IP3 Performance
Adjustable Third Order Intercept on LNA Stage
Flexible IF Frequency Range from 80 MHz to 230 MHz
Benefits
Very Small 24 Pin 4 x 4 mm Package
Few External Components
Fully ESD Protected
Application
Dual-mode/Single-band CDMA IS-95/98 Based Mobile Phones
Electrostatic sensitive device.
Observe precautions for handling.
Description
The T0351 is a front-end receiver RFIC designed for single-band, dual-mode opera-
tion. The device supports AMPS and Cell band CDMA operation. The IF range is from
80 MHz to 230 MHz with external tuning. The low-noise amplifier has an adjustable
third order intercept point (IP3) to minimize inter-modulation and cross-modulation
effects. The mixers are designed for differential IF outputs (single-ended or differential
IF outputs for AMPS mode), and they feature excellent linearity and low-noise figure.
This device is available in a 4
4 mm MLF package with 24 pins. The T0351 front-end
receiver is capable of meeting all electrical requirements in accordance with the
TIA/EIA 98-C wireless communication standard.
Figure 1. Block Diagram
CLO_IN
BUFFEN
LIN
PWR_UP
CLNA_IN
CLO_Out
AMPS_OUT+
AMPS_OUT-
CLNA
_
O
UT
CM
_
I
N
CLNA
_
G
ND
IS
E
T
_
C
e
l
l
5
3
2
21
1
11
22
24
14
13
8
10
VCC_MIX
15
CDMA_OUT-
CDMA_OUT+
VCC_DIG
VCC_LO
9
VCC_LNA
6
20
17
18
Gain
23
VCC_ TX
12
Con
t
r
o
l
2.8 V Dual-mode
RF Receiver for
CDMA/AMPS
T0351
Preliminary
(Summary)
Rev. 4558ASCDMA11/02
2
T0351
4558ASCDMA11/02
Pin Configuration
Figure 2. Pinning
Pin Description
Pin
Symbol
Function
1
ISET_Cell
Bias resistor for Cell LNA. For typical bias use a 390
W
resistor to ground which sets the bias current for HGHL
mode.
2
CLNA_Out
Cell LNA output. Requires a DC blocking capacitor and an L-C (shunt C/series L) matching network for
optimum gain, intercept and noise performance.
3
CLNA_GND
Cell LNA emitter-ground. The LNA emitter ground should be grounded immediately to the ground plane to
reduce stray inductance and capacitance that may affect performance.
4
N.C.
Not connected.
5
CLNA_IN
Cell LNA input. Requires a DC blocking capacitor and an L-C (shunt C/series L) matching network for
optimum gain, intercept and noise performance.
6
VCC_LNA
Power supply pin for Cell LNA. Bypass with a capacitor as close to the pin as possible.
7
N.C.
Not connected.
8
CLO_IN
Cell band LO input.
9
VCC_LO
Supply voltage for LO input buffer.
10
CLO_OUT
Cellular LO buffer output. Internally matched to 100
W
. Does not require a blocking capacitor.
11
BUFFEN
LO output buffer enable. Set BUFFEN pin HIGH to power up the LO buffer output.
12
VCC_TX
Supply voltage for LO output buffer.
13
AMPS_OUT-
Negative AMPS IF output.
14
AMPS_OUT+
Positive AMPS IF output.
15
VCC_MIX
Supply voltage for both mixers.
16
N.C.
Not connected.
17
CDMA_OUT-
Negative CDMA IF output.
18
CDMA_OUT+
Positive CDMA output.
19
N.C.
Not connected.
20
VCC_DIG
Supply voltage for logic control circuits.
21
CM_IN
Cell RF input to Cell CDMA mixer and Cell AMPS mixer.
22
LIN
Logic input for high or low linearity. Logic HIGH selects High linearity.
23
Gain
Gain select logic input. Logic high selects High Gain.
24
PWR_UP
Power-up input. Logic low selects shutdown mode.
Paddle
Device ground and heat sink, requires good thermal path; RF reference plane.
ISET_Cell
CLNA_OUT
CLNA_GND
N.C.
CLNA_IN
VCC_LNA
CDMA_OUT+
CDMA_OUT-
N.C.
VCC_MIX
AMPS_OUT+
AMPS_OUT-
P
W
R_UP
Gain
LI
N
CM
_I
N
V
CC_DI
G
N.
C.
N.
C
.
CLO_I
N
V
CC_LO
CLO_OUT
BU
FFEN
V
CC_T
X
24 23 22 21 20 19
7 8 9 10 11 12
18
17
16
15
14
13
1
2
3
4
5
6
3
T0351
4558ASCDMA11/02
Table 1. Mode Programming Truth Table
Note:
1. The symbol X ("do not care") means a logic input does not affect an operating mode.
Mode
Condition
Gain
LIN
BUFFEN
(1)
PWR_UP
Shut down
All circuits off
Low
Low
X
Low
Cell mode
High gain, high linearity
High
High
X
High
High gain, low linearity
High
Low
X
High
Low gain
Low
High
X
High
AMPS mode
Low
Low
X
High
Activate Cell LO output buffer
X
X
High
High
Absolute Maximum Ratings
Parameters
Symbol
Value
Unit
Supply voltages, no RF applied
V
CC
-0.5 to +4.0
V
Logic control voltages
V
CTRL
-0.5 to + V
CC
+0.5
V
Supply current
I
CC
50.0
mA
RF and LO input signals
P
LO ;
C
LO;
CLNA_IN
+5.0 dBm
I
SET_CELL
LNA IP3 adjustment
1
mA
Operating case temperature
T
C
-40 to +110
C
Storage temperature
T
STG
-55 to +150
C
Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient
R
thJA
TBD
K/W
4
T0351
4558ASCDMA11/02
DC Supply Characteristics
Test conditions: Unless otherwise noted, the following conditions apply to typical performance specification under static
conditions (no RF applied): V
CC
= +2.75 V, T
amb
= 25C.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
All Modes
Supply voltage
6, 9, 12,
15, 20
V
CC
2.7
2.8
3.3
V
Control voltage High
11, 22, 23,
24
V
CTRL
1.7
V
Control voltage Low
11, 22, 23,
24
V
CTRL
0.5
V
LO Rx buffer supply
current
8
I
CCMIX
6.0
7.0
mA
LO Tx buffer current
10
I
CCMIX
5.0
mA
Logic-High current
11, 22, 23,
24
I
CTRL
100
A
Logic-Low current
11, 22, 23,
24
I
CTRL
-5.0
A
Power-down supply
current
Gain, LIN = LOW
6, 9, 12,
15, 20
I
CC
10
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
AC Electrical Characteristics
Test conditions: Unless otherwise noted, the following conditions apply to typical performance specification under static
conditions: V
CC
= +2.75 V, T
amb
= 25C, all RF inputs and outputs with a return loss of 10 dB minimum.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
General Performance
Operating frequency
range
5
f
869
881.5
894
MHz
LO frequency range
IF = 184 MHz
8
f
LO
685
1053
710
1078
MHz
IF frequency range
13, 14, 17,
18
f
IF
80
85
230
MHz
LO input power level
8
P
LO
-10
-5
0
dBm
LO Tx buffer output
power level
10
P
LOOUT
-8
-3
dBm
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
5
T0351
4558ASCDMA11/02
Cascade RF Electrical Characteristics
Test conditions: Unless otherwise noted, the following conditions apply to typical performance specification under static
conditions: V
CC
= +2.75 V, T
amb
= 25C; RF = 881.5 MHz; LO = 966.5 MHz; IF = 85 MHz; LO input = -5.0 dBm; RF input =
-35 dBm (high gain mode)
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Combined LNA and Mixer Performance, CDMA Modulation
High-Gain High-Linearity Mode (HGHL)
Gain
Band_SEL = High;
Gain = High; LIN =
High
G
26
dB
Noise figure
NF
2.5
dB
Input IP3
IP3
-4
dBm
Supply current
I
CC
29
mA
High-Gain Low-Linearity Mode (HGLL Paging Mode)
Gain
Band_SEL = High;
Gain = High; LIN =
Low
G
25
dB
Noise figure
NF
2.7
dB
Input IP3
IP3
-5.5
dBm
Supply current
I
CC
21
mA
Low-Gain Mode (LG)
Gain
Band_SEL = High;
Gain = Low; LIN =
Low
G
9.5
dB
Noise figure
NF
14
dB
Input IP3
IP3
12
dBm
Supply current
I
CC
26
mA
Combined LNA and Mixer Performance, AMPS Modulation
Gain
Band_SEL = High;
Gain = Low; LIN =
Low
G
22
dB
Noise figure
NF
3.9
dB
Input IP3
IP3
-6
dBm
Supply current
I
CC
19
mA
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter