ChipFind - документация

Электронный компонент: T0372

Скачать:  PDF   ZIP
1
Features
Excellent Power Added Efficiency
1xRTT Compatible
Industry Standard Digital Quiescent Current State Control
Analog Continuous Bias Capability
CMOS-compatible Logic Inputs
High ACP and ALT
Excellent RX Band Noise Performance
Benefits
Extended Battery Operating Time
Very Small 10 Pin 4 mm
4 mm Package
Few External Components
Fully ESD Protected
Applications
Cell Band CDMA IS-95/98 Based Mobile Phones
Single-mode, Dual-mode and Tri-mode CDMA Phones
Description
The T0372 is a 4 mm
4 mm 3-V CDMA/AMPS cell-band power amplifier module
designed for use in mobile phones. Its extremely small 4 mm
4 mm package makes
it ideal for today's very small data enable phones. The module supports the IS-95 and
IS-98 standards and is also 1xRTT compliant. The T0372 provides excellent RF per-
formance with low current consumption resulting in longer talk times in portable
applications. The module has a small 4 mm
4 mm footprint, which facilitates its use
in the next generation of small, lightweight handsets and other wireless applications.
The heart of the module is a two-stage power amplifier manufactured in Atmel's SiGe
technology. The T0372 provides the capability to be operated digitally (one or two bias
states), or in a continuous quiescent current mode. In two-state quiescent current
mode operation, the T0372 is controlled by the baseband processor using a CMOS-
compatible I
CQ
control voltage. Overall current consumption of the device is minimized
by selecting the lowest I
CQ
state available for each power output level. The module is
50-
W
matched on the input and output, allowing the device to be used with minimal
external circuitry.
3-V
CDMA
/AMPS
Power Amplifier
Module
4 mm
4 mm
for Cell Band
T0372
Preliminary
(Summary)
Rev. 4541ASCDMA08/02
2
T0372
4541ASCDMA08/02
Figure 1. Block Diagram
Pin Configuration
Figure 2. Pinning
4
5
8
Bias & Control
GND
VREF
RFOUT
VCC2
2
6
Match
Match
1
VCC1
VCTRL
RFIN
VREF
VCTRL
VCC1
VCC2
GND
GND
GND
GND
RFIN
RFOUT
1
2
3
4
5
6
7
8
9
10
Pin Description
Pin
Symbol
Function
1
VREF
Regulated supply for setting bias, reference voltage input
2
VCTRL
CMOS-compatible logic level used to set bias
3
GND
Ground recommended
4
RFIN
RF input, the RF circuit is DC-grounded internally, 50-
W
RF impedance
5
VCC1
Collector supply for input stage
6
VCC2
Collector supply for output stage
7
GND
Ground recommended
8
RFOUT
RF output, the RF circuit is DC-blocked internally, 50-
W
RF impedance
9
GND
Ground recommended
10
GND
Ground recommended
-
Paddle
Device ground and heat sink, requires good thermal path
3
T0372
4541ASCDMA08/02
Absolute Maximum Ratings
Parameters
Symbol
Value
Unit
Supply voltages, no RF applied
V
CC1
, V
CC2
-0.5 to +6.0
VDC
Supply voltages, RF applied
V
CC1
, V
CC2
-0.5 to +5.0
VDC
Bias reference voltages and bias control
voltages (Pins 3 and 4 respectively)
V
REF
, V
CTRL
-0.5 to +5.0
VDC
Power dissipation
P
DISS
2.5
W
Case temperature, survival
T
C
-40 to +100
C
Storage temperature
T
stg
-40 to +150
C
DC-grounded RF input
RF
IN
0 to 0
VDC
DC-blocked RF output
RF
OUT
-20 to +20
VDC
Note:
The part may not survive all maximum ratings applied simultaneously.
Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient
R
thJA
TBD
K/W
Electrical Characteristics
Test conditions: V
CC1, CC2
= 3.4 VDC, V
REF
= 2.85 VDC, V
CTRL
= 0.5 VDC, RF = 836 MHz, Tc = 25C, P
out
= 28 dBm,
Minimum/maximum limits are at +25C ambient temperature, unless otherwise specified
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Frequency
4, 8
f
o
824
836
849
MHz
A; D
Output power
8
P
out
28
dBm
A
Large signal gain
P
out
= 28 dBm,
V
CTRL
= low
4, 8
G
high
26.0
29.0
dB
A
P
out
= 16 dBm,
V
CTRL
= high
4, 8
G
low
25.0
28.0
dB
A
Gain variation versus
temperature
-30C to +85C
4, 8
1.4
dB
C
Quiescent current
(high-gain mode)
V
CTRL
= low
1, 5, 6
I
CQ
hi
110
mA
A
Quiescent current
(low-gain mode)
V
CTRL
= high
1, 5, 6
I
CQ
low
60
mA
A
Current consumption
P
out
= 28 dBm,
V
CTRL
= low
1, 5, 6
I
cc
503
mA
A
Output power (low)
ACPR = -49 dBc,
IS-95/98 standard,
V
CTRL
= high
8
P
out
16
dBm
B
Power added
efficiency
P
out
= 28 dBm
V
CTRL
= low
PAE
33
36
%
A
Adjacent channel
power
P
out
= 28 dBm,
IS-95/98 standard,
V
CTRL
= low
8
ACP
-49
-44
dBc
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
4
T0372
4541ASCDMA08/02
Alternate channel
power
P
out
= 28 dBm,
IS-95/98 standard,
V
CTRL
= low
8
ALT
-57
-55
dBc
A
Noise power in Rx
band
P
out
= 28 dBm,
IS-95/98 standard,
V
CTRL
= low
8
-94
dBm/
30 kHz
C
RF input return loss
P
out
= 28 dBm,
V
CTRL
= low
4
S
11
11.5
dB
A
Second harmonic
P
out
= 28 dBm,
IS-95/98 standard,
V
CTRL
= low
8
2fo
-35
dBc
A
Third harmonic
P
out
= 28 dBm,
IS-95/98 standard,
V
CTRL
= low
8
3fo
-45
dBc
A
Supply voltage
5, 6
V
CC
3.1
3.4
4.2
VDC
D
Reference voltage
For 1 or 2 bias state
operation
1
V
REF
2.8
2.85
3.0
VDC
D
Reference current
V
CTRL
= low
1
I
B_high
10
mA
A
V
CTRL
= high
1
I
B_low
5
mA
A
Leakage current
V
CTRL
= high;
V
REF
= 0 VDC
5, 6
10
A
A
Logic current
At V
CTRL
2
I
CTRL
49
100
A
A
Control voltage
High
Low
2
V
CTRL
1.7
0
2.0
0.25
4.5
0.5
VDC
VDC
D
Ruggedness
No damage,
P
OUT
= 28 dBm,
IS-95/98 standard,
V
CC1, CC2
= high
8
10:1
C
Stability
No oscillations,
P
OUT
= 28 dBm,
IS-95/98 standard,
V
CC1, CC2
= high
8
10:1
C
Electrical Characteristics (Continued)
Test conditions: V
CC1, CC2
= 3.4 VDC, V
REF
= 2.85 VDC, V
CTRL
= 0.5 VDC, RF = 836 MHz, Tc = 25C, P
out
= 28 dBm,
Minimum/maximum limits are at +25C ambient temperature, unless otherwise specified
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
5
T0372
4541ASCDMA08/02
Electrical Characteristics (AMPS Mode)
Test conditions: V
CC1, CC2
= 3.4 VDC, V
REF
= 2.85 VDC, V
CTRL
= 0.5 VDC, RF = 836 MHz, Tc = 25C, P
out
= 31.5 dBm,
Minimum/maximum limits are at +25C ambient temperature, unless otherwise specified
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Frequency
4, 8
f
o
824
836
849
MHz
A, D
Output power
Saturated,
P
IN
= 3.5 dBm
8
P
out
31.5
dBm
A
Large signal gain
P
out
= 31.5 dBm
4, 8
I
CQ
hi
24.5
27.0
dB
A
Power added
efficiency
P
out
= 31.5 dBm
PAE
47
51
%
A
Noise power in Rx
band
P
out
= 31.5 dBm
8
-93
dBm/
30 kHz
C
RF input return loss
All operating P
out
and
V
CC
4
S
11
11.5
dB
A
Second harmonic
P
out
= 31.5 dBm
8
2fo
-32.5
dBc
A
Third harmonic
P
out
= 31.5 dBm
8
3fo
-42.5
dBc
A
Current consumption
P
out
= 31.5 dBm
1, 5, 6
I
CC
783
mA
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter