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Электронный компонент: T0930-TJQ

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1
4722ASIGE06/03
Features
Up to 33 dBm Output Power in CW Mode
High Power Added Efficiency (PAE)
Single Supply Operation at 2.4 V (1 W) or 3.2 V (2 W)
Current Consumption in Power-down Mode
10 A
No External Power Supply Switch Required
Power Ramp Control
Simple Input and Output Matching for Maximum Flexibility
SMD Package (PSSOP16 with Heat Slug)
Electrostatic sensitive device.
Observe precautions for handling.
Description
The T0930 is a monolithic integrated power amplifier IC. The device is manufactured
with Atmel's Silicon-Germanium (SiGe) technology and has been designed for use in
900-MHz two-way pagers, PDAs, meter readers and ISM phones.
With a single supply voltage of 2.4 V to 3.4 V and a neglectable leakage current in
power-down mode, the pager amplifier only needs few external components and thus
helps to reduce system costs. It is suited for operation in CW mode.
Figure 1. Block Diagram
Control
Match
Match
Match
RFin
(900 MHz)
(900 MHz)
VCTL
VCC,CTL
11
12
13
14
RFout/VCC3
VCC1
5
VCC2
2
1
3
GND
10
4
16
6
8
9
GND
7
Harmonic
tuning
15
SiGe Power
Amplifier for
CW
Applications
T0930
2
T0930
4722ASIGE06/03
Pin Configuration
Figure 2. Pinning PSSOP16
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC2
GND
VCC1
RFIN
GND
VCTL
VCC2
VCC2
RFOUT/VCC3
RFOUT/VCC3
RFOUT/VCC3
RFOUT/VCC3
GND
VCC,CTL
GND
RFOUT/VCC3
T0930
Pin Description
Pin
Symbol
Function
1
VCC2
Supply voltage 2
2
VCC2
Supply voltage 2
3
VCC2
Supply voltage 2
4
GND
Ground
5
VCC1
Supply voltage 1
6
RFIN
RF input
7
GND
Ground (control)
8
VCTL
Control input
9
VCC,CTL
Supply voltage for control
10
GND
Ground (optional)
11
RFOUT/VCC3
RF output/supply voltage 3
12
RFOUT/VCC3
RF output/supply voltage 3
13
RFOUT/VCC3
RF output/supply voltage 3
14
RFOUT/VCC3
RF output/supply voltage 3
15
RFOUT/VCC3
RF output/harmonic tuning
16
GND
Ground
3
T0930
4722ASIGE06/03
Absolute Maximum Ratings
All voltages refer to GND
Parameters
Symbol
Min.
Max.
Unit
Supply voltage V
CC
at VCTL = 1.7 V, Pin 5
Pin 1, 2, 3
Pins 11, 12, 13, 14 and 15
Pin 9
V
CC1
V
CC2
V
CC3
V
CC, CTL
4
4
4
4
V
Input power, Pin 6
P
in
12
dBm
Gain control voltage
(1)
, Pin 8
V
CTL
0
2
V
Duty cycle for operation
100
%
Junction temperature
T
j
+150
C
Storage temperature
T
stg
-40
+150
C
Note:
1. The gain control voltage should always be 0.2 V below the supply voltage. RF should be applied before ramp-up.
Operating Range
All voltages referred to GND
Parameters
Symbol
Min.
Typ.
Max.
Unit
Supply voltage V
CC
(1)
1 W application
V
CC1
, V
CC2,
V
CC3,
V
CC, CTL
1.8
2.4
3
V
Supply voltage V
CC
(1)
2 W application
V
CC1
, V
CC2,
V
CC3,
V
CC, CTL
2.6
3.2
3.6
V
Ambient temperature
T
amb
-25
+85
C
Input frequency
f
in
900
MHz
Note:
1. The gain control voltage should be always 0.2 V below the supply voltage. RF should be applied before ramp-up.
4
T0930
4722ASIGE06/03
Electrical Characteristics for 1 W Application
V
CC
= V
CC1
, ... , V
CC3
, V
CC, CTL
= +2.4 V, V
CTL
= 1.7 V, T
amb
= +25C, 50-
W
input and 50-
W
external output match
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1
Power Supply
1.1
Supply voltage
V
CC
1.8
2.4
3.0
V
A
1.2
Current consumption in
active mode
P
out
= 30 dBm
PAE = 47%
I
0.9
A
A
1.3
Current consumption
(leakage current)
in power-down mode
V
CTL
0.2 V
I
10
A
A
2
RF Input
2.1
Frequency range
f
in
880
900
935
MHz
A
2.2
Input impedance
(1)
Z
i
50
W
C
2.3
Input power
P
in
5
12
dBm
C
2.4
Input VSWR
(1)
P
in
= 0 to 12 dBm
P
out
= 30 dBm
2:1
C
3
RF Output
3.1
Output impedance
(1)
Z
o
50
W
C
3.2
Output power in normal
conditions
P
in
= 5 dBm
R
L
= R
G
= 50
W
V
CC
= 2.4 V, T
amb
= +25
C
V
CC
= 1.8 V, T
amb
= +25
C
P
out
P
out
30
27
dBm
dBm
A
3.3
Minimum output power
V
CTL
= 0.3 V
- 20
dBm
A
3.4
Power-added efficiency
V
CC
= 2.4 V, P
out
= 27 dBm
V
CC
= 2.4 V, P
out
= 30 dBm
PAE
PAE
40
47
%
%
A
3.5
Stability
Temp = -25 to +85
C
no spurious
-60 dBc
VSWR
10:1
C
3.6
Load mismatch (stable,
no damage)
P
out
= 30 dBm, all phases
VSWR
10:1
C
3.7
Second harmonic
distortion
2fo
-35
dBc
A
3.8
Third harmonic distortion
3fo
-35
dBc
A
3.9
Noise power
f = 925 to 935 MHz
f
935 MHz
P
out
= 30 dBm
RBW = 100 kHz
-73
-85
-70
-82
dBm
dBm
C
3.10 Rise and fall time
0.5
ms
A
3.11
Isolation between input
and output
P
in
= 0 to 10 dBm
V
CTL
0.2 V (power down)
50
dB
C
4
Power Control
4.1
Control curve
Pout
25 dBm
150
dB/V
C
4.2
Power control range
V
CTL
= 0.3 to 2.0 V
50
dB
C
4.3
Control voltage range
V
CTL
0.3
2.0
V
A
4.4
Control current
P
in
= 0 to 10 dBm, V
CTL
= 0 to 2.0 V
I
CTL
200
A
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. With external matching (see "Application Circuit").
5
T0930
4722ASIGE06/03
Electrical Characteristics for 2 W Application
V
CC
= V
CC1
, ... , V
CC3
, V
CC, CTL
= +3.2 V, V
CTL
= 1.9 V, T
amb
= +25C, 50-
W
input and 50-
W
external output match
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
5
Power Supply
5.1
Supply voltage
V
CC
2.6
3.2
3.6
V
A
5.2
Current consumption in
active mode
P
out
= 33 dBm
PAE = 47%
I
1.33
A
A
5.3
Current consumption
(leakage current)
in power-down mode
V
CTL
0.2 V
I
10
A
A
6
RF Input
6.1
Frequency range
f
in
880
900
935
MHz
A
6.2
Input impedance
(1)
Z
i
50
W
C
6.3
Input power
P
in
5
12
dBm
C
6.4
Input VSWR
(1)
P
in
= 0 to 12 dBm
P
out
= 30 dBm
2:1
C
7
RF Output
7.1
Output impedance
(1)
Z
o
50
W
C
7.2
Output power in normal
conditions
P
in
= 5 dBm, R
L
= R
G
= 50
W
V
CC
= 3.2 V, T
amb
= +25
C
V
CC
= 2.2 V, T
amb
= +25
C
P
out
P
out
33
30
dBm
dBm
A
7.3
Minimum output power
V
CTL
= 0.3 V
- 20
dBm
A
7.4
Power-added efficiency
V
CC
= 3.2 V, P
out
= 27 dBm
PAE
47
%
A
7.5
Stability
Temp = -25 to + 85
C
no spurious
-60 dBc
VSWR
10:1
C
7.6
Load mismatch
(stable, no damage)
P
out
= 33 dBm, all phases
VSWR
10:1
C
7.7
Second harmonic
distortion
2fo
-35
dBc
A
7.8
Third harmonic distortion
3fo
-35
dBc
A
7.9
Noise power
f = 925 to 935 MHz
f
935 MHz
P
out
= 33 dBm
RBW = 100 kHz
-73
-85
-70
-82
dBm
dBm
C
7.10 Rise and fall time
0.5
s
A
7.11
Isolation between input
and output
P
in
= 0 to 10 dBm
V
CTL
0.2 V (power down)
50
dB
C
8
Power Control
8.1
Control curve
Pout
25 dBm
150
dB/V
C
8.2
Power control range
V
CTL
= 0.3 to 2.0 V
50
dB
C
8.3
Control voltage range
V
CTL
0.3
2.0
V
A
8.4
Control current
P
in
= 0 to 10 dBm, V
CTL
= 0 to 2.0 V
I
CTL
200
A
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. With external matching (see "Application Circuit").