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Электронный компонент: T2527N1xx-DDW

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1
Features
No External Components Except PIN Diode
Supply-voltage Range: 2.7 V to 3.6 V
Available for Carrier Frequencies in the Range of 30 kHz to 56 kHz;
Adjusted by Zener-diode Fusing
Enhanced Bandpass Filter Accuracy of 1.25%
ESD: 4 kV HBM, 400 V MM
Automatic Sensitivity Adaptation (AGC)
Automatic Strong Signal Adaptation (ATC)
Enhanced Immunity against Ambient Light Disturbances
TTL and CMOS Compatible
Suitable Minimum Burst Length
6 or 10 pulses
Applications
Audio/Video Applications
Home Appliances
Remote Control Equipment
Description
The fully integrated IR receiver IC T2527 is designed to be used in all kinds of unidi-
rectional infrared data transmission systems. It is especially optimized for carrier-
frequency modulated transmission applications. Several built-in features enable best
transmission quality.
The input stage has two functions: first to provide the bias voltage for the PIN diode
and secondly to transform the photo current signal into a voltage for further internal
processing. This is carried out by a special circuit that is optimized for low-noise appli-
cations due to the fact that the incoming current signal is as small as 700 pA. This
voltage signal is amplified by a so-called Controlled Gain Amplifier (CGA) followed by
a bandpass filter. The filter frequency and therefore the operating carrier frequency
are defined by a narrow-tuned bandpass filter. The enhanced bandpass filter tunes
the input signal very accurately with a tolerance of 1.25%.
The input burst signal is demodulated and converted into a digital envelope output
pulse. An integrated dynamic feedback circuit block (which varies the gain as a func-
tion of the present environmental conditions such as ambient light, modulated lamps
etc.) makes sure that the signal information is evaluated and that unwanted pulses are
suppressed at the output pin.
The operating supply voltage range for the T2527 is 2.7 V to 3.6 V.
Low-voltage
Highly Selective
IR Receiver IC
T2527
Rev. 4600BIRDC12/02
2
T2527
4600BIRDC12/02
Figure 1. Block Diagram
Pad Layout
Figure 2. Pad Layout 1 (DDW Only)
Figure 3. Pad Layout 2 (DDW, SO8 or TSSOP8)
Input
CGA
& filter
Demo-
dulator
Oscillator
AGC / ATC
& digital control
VS
Modulated IR signal
min 6 or 10 pulses
GND
IN
OUT
T2527
m
C
Carrier frequency f
0
GND
IN
VS
FUSING
OUT
T2527
GND
IN
OUT
FUSING
VS
T2527
(1)
(3)
(6)
(5)
3
T2527
4600BIRDC12/02
Pin Configuration
Figure 4. Pinning SO8 and TSSOP8
1
2
3
4
8
7
6
5
VS
n.c.
OUT
n.c.
n.c.
n.c.
GND
IN
Pin Description
Pin
Symbol
Function
1
VS
Supply voltage
2
n.c.
Not connected
3
OUT
Data output
4
n.c.
Not connected
5
IN
Input PIN diode
6
GND
Ground
7
n.c.
Not connected
8
n.c.
Not connected
Absolute Maximum Ratings
Parameters
Symbol
Value
Unit
Supply voltage
V
S
-0.3 to +4.0
V
Supply current
I
S
2.0
mA
Input voltage
V
IN
-0.3 to V
S
V
Input DC current at V
S
= 3 V
I
IN
0.4
mA
Output voltage
V
O
-0.3 to V
S
V
Output current
I
O
10
mA
Operating temperature
T
amb
-25 to +85
C
Storage temperature
T
stg
-40 to +125
C
Power dissipation at T
amb
= 25C
P
tot
20
mW
Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient SO8
R
thJA
130
K/W
Junction ambient TSSOP8
R
thJA
TBD
K/W
4
T2527
4600BIRDC12/02
Electrical Characteristics
T
amb
= -20
C to +70
C, V
S
= 2.7 V to 3.6
V unless otherwise specified.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1
Supply
1.1
Supply-voltage range
1
V
S
2.7
3.0
3.6
V
C
1
.
2
Supply current
I
IN
= 0
1
I
S
0.7
0.9
1.2
mA
B
2
Output
2.1
Internal pull-up
resistor
(1)
T
amb
= 25
C;
see Figure 12
1, 3
R
PU
30/40
k
W
A
2.2
Output voltage low
R
2
= 2.4 k
W
;
see Figure 12
3, 6
V
OL
250
mV
B
2.3
Output voltage high
3, 1
V
OH
V
S
-
0.25
Vs
V
B
2.4
Output current
clamping
R
2
= 0; see Figure 12
3, 6
I
OCL
8
mA
B
3
Input
3.1
Input DC current
V
IN
= 0; see Figure 12
5
I
IN_DCMAX
-150
A
C
3.2
Input DC current; see
Figure 6
V
IN
= 0; V
S
= 3 V,
T
amb
= 25
C
5
I
IN_DCMAX
-350
A
B
3.3
Min. detection
threshold current; see
Figure 5
Test signal:
see Figure 11
V
S
= 3 V,
T
amb
= 25
C,
I
IN_DC
= 1 A;
square pp,
burst N = 16,
f = f
0
; t
PER
= 10 ms,
Figure 10;
BER = 50
(2)
3
I
Eemin
-700
pA
B
3.4
Min. detection
threshold current with
AC current
disturbance
IIN_AC100 = 3
A at
100 Hz
3
I
Eemin
-1500
pA
C
3.5
Max. detection
threshold current with
V
IN
> 0V
Test signal:
see Figure 11
V
S
= 3 V, T
amb
= 25C,
I
IN_DC
= 1 A;
square pp,
burst N = 16,
f = f
0
; t
PER
= 10 ms,
figure 10;
BER = 5%
(2)
3
I
Eemax
-200
A
D
4
Controlled Amplifier and Filter
4.1
Maximum value of
variable gain (CGA)
G
VARMAX
51
dB
D
4.2
Minimum value of
variable gain (CGA)
G
VARMIN
-5
dB
D
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see "Ordering Information".
2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input Pin 19 to Pin 21 pulses can appear at the
Pin OUT.
3. After transformation of input current into voltage.
5
T2527
4600BIRDC12/02
ESD
All pins: 2000 V HBM; 200 V MM, MIL-STD-883C, Method 3015.7
Typical Electrical Curves at T
amb
= 25C
Figure 5. I
Eemin
versus I
IN_DC
, V
S
= 3 V
4.3
Total internal
amplification
(3)
G
MAX
71
dB
D
4.4
Center frequency
fusing accuracy of
bandpass
V
S
= 3 V, T
amb
= 25C
f
03V_FUSE
-1.25
f
0
+1.25
%
A
4.5
Overall accuracy
center frequency of
bandpass
See Figure 7
f
03V
-3.5
f
0
+2.0
%
C
4.6
BPF bandwidth
-3 dB; f
0
= 38 kHz;
see Figure 9
B
3.8
kHz
C
Electrical Characteristics (Continued)
T
amb
= -20
C to +70
C, V
S
= 2.7 V to 3.6
V unless otherwise specified.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see "Ordering Information".
2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input Pin 19 to Pin 21 pulses can appear at the
Pin OUT.
3. After transformation of input current into voltage.
0.1
1.0
10.0
100.0
0.1
1.0
10.0
100.0
1000.0
V
S
= 3 V
f = f
0
I
Ee
m
i
n
( n
A
)
I
IN_DC
( A )