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Электронный компонент: T7025-PES

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1
Features
Single 3-V Supply Voltage
Highly Efficient Power Amplifier (PAE Typically 40% at 23 dBm)
Temperature Compensated Output Power
Power Detector
Internally Regulated Power Loop
4 Digitally Controlled Output Power Steps
6 dB Power Steps
Current-saving Power-down Mode
Few External Components
Leadless 4 mm
4 mm QFN16 Package
Electrostatic sensitive device.
Observe precautions for handling.
Description
The T7025 is a monolithic SiGe power amplifier. It is especially designed for operation
in TDMA systems like Bluetooth
TM
, Home RF and ISM proprietary radios.
The internally regulated power loop consists of a power detector, a temperature com-
pensated gain amplifier and 2-bit logic. Due to the power-down mode no external
switch transistor for V
S
is required.
Figure 1. Block Diagram
GN
D
V2_
P
A
V2_
P
A
V3_PA_OUT
V3_PA_OUT
GND
GND
PA_IN
GND
GND
PU
13
PWR
DET
14
15
16
1
2
3
4
5
6
7
8
9
10
11
12
PWR0
PWR1
GND
V3_PA_OUT
V1_
P
A
DIGITAL CONTROL
ISM 2.4 GHz
Power Amplifier
T7025
Preliminary
Rev. 4547AISM02/03
2
T7025
4547AISM02/03
Pin Configuration
Figure 2. Pinning QFN16
GN
D
V2_
P
A
V2_
P
A
V3_PA_OUT
V3_PA_OUT
GND
GND
RF_IN
GND
GND
PU
13
14
15
16
1
2
3
4
5
6
7
8
9
10
11
12
PW
R0
PW
R1
GN
D
V3_PA_OUT
V1_
P
A
3
T7025
4547AISM02/03
Pin Description
Pin
Symbol
Function
Configuration
1
GND
Ground
2
PA_IN
Power amplifier input
3
GND
Ground
4
GND
Ground
5
PU
Power up
6
PWR0
Digital power control Bit 0
7
PWR1
Digital power control Bit 1
8
GND
Ground
GND
PA_in
V1_PA
GND
PU
V1_PA
GND
PWR0,
PWR1
V1_PA
PU
4
T7025
4547AISM02/03
9
V3_PA_OUT
Supply voltage (third stage) and power
amplifier output
10
V3_PA_OUT
Supply voltage (third stage) and power
amplifier output
11
V3_PA_OUT
Supply voltage (third stage) and power
amplifier output
12
GND
Ground
13
V2_PA
Supply voltage (second stage)
14
V2_PA
Supply voltage (second stage)
15
GND
Ground
16
V1_PA
Supply voltage (first stage)
Slug
GND
Ground
Pin Description (Continued)
Pin
Symbol
Function
Configuration
V3_PA
GND
V2_PA
GND
GND
PA_in
V1_PA
5
T7025
4547AISM02/03
Absolute Maximum Ratings
All voltages are referred to ground (Pins GND and slug), no RF
Parameters
Symbol
Value
Unit
Supply voltage Pins V1_PA, V2_PA, V3_PA_OUT
V
S
6
V
Junction temperature
T
j
150
C
Storage temperature
T
stg
-40 to +125
C
RF input power PA
P
inPA
10 dBm
dBm
Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient, HP-VFQFP-N16
R
thJA
TBD
K/W
Operating Range
All voltages are referred to ground (Pins GND and slug). Power supply points are V1_PA, V2_PA, V3_PA_OUT.
The following table represents the sum of all supply currents at maximum output power.
Parameters
Symbol
Min.
Typ.
Max.
Unit
Supply voltage Pins V1_PA, V2_PA, V3_PA_OUT
V
S
2.7
3.0
4.6
V
Supply current
I
S
160
mA
Standby current
I
S_PD
10
A
Ambient temperature
T
amb
-40
+25
+85
C
Electrical Characteristics
Test conditions (unless otherwise specified): V
S
= 3.0 V, T
amb
= 25C, f = 2,45 GHz, Pin = 0 dBm,
CW-mode
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1
Power Amplifier
(1)(2)
1.1
Supply voltage
Pins V1_PA, V2_PA
and V3_ PA_OUT
V
S
2.7
3.0
4.6
V
A
1.2
Supply current
TX
I
S_TX
160
mA
A
1.3
Power down
I
S_PD
10
A
A
1.4
Frequency range
TX
f
2.4
2.5
GHz
A
1.5
Digital gain-control
range
TX
D
Gp
18
dB
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. The power amplifier shall be unconditionally stable, maximum duty cycle 100%, true CW operation, maximum load mis-
match and duration TBD
2. With external matching network, Z
in
= Z
out
= 50
W
3. According to Bluetooth 1.1 specification
4. Internal pull-up current source, activated with PU-signal (TX-mode)