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Электронный компонент: U2790B

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1
Features
Supply Voltage 5 V (Typically)
Very Low Power Consumption: 150 mW (Typically) for -1 dBm Output Level
Very Good Sideband Suppression by Means of Duty Cycle Regeneration of the LO
Input Signal
Phase Control Loop for Precise 90 Phase Shifting
Power-down Mode
Low LO Input Level: -10 dBm (Typically)
50-
W
Single-ended LO and RF Port
LO Frequency from 100 MHz to 1 GHz
SO16 Package01/03
Benefits
No External Components Required for Phase Shifting
Adjustment Free, Hence Saves Manufacturing Time
Only Three External Components Necessary, this Results in Cost and Board Space
Saving
Electrostatic sensitive device.
Observe precautions for handling.
Description
The U2790B is a 1000-MHz quadrature modulator using Atmels advanced UHF pro-
cess. It features a frequency range from 100 MHz up to 1000 MHz, low current
consumption, and single-ended RF and LO ports. Adjustment-free application makes
the direct converter suitable for all digital radio systems up to 1000 MHz, e.g., GSM,
ADC, JDC.
Figure 1. Block Diagram
Duty cycle
regenerator
Frequency
doubler
0
90
Power
up
1
12
8
7
16
15
9
10
5,4
6
3
2,11,13,14
90/control
loop
BB
AI
LO
i
Ph
adj
S
PU
PU
V
S
RF
O
GND
S
BB
AI
BB
BI
BB
Bi
1000-MHz
Quadrature
Modulator
U2790B
Rev. 4583ACELL01/03
2
U2790B
4583ACELL01/03
Pin Configuration
Figure 2. Pinning SO16
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
PU
GND
GND
GND
GND
Ph
adj
RF
O
V
S
V
S
S
PD
BB
Ai
BB
Ai
BB
Bi
BB
Bi
LO
i
Ph
adj
Pin Description
Pin
Symbol
Function
1
PU
Power-up input
2, 11, 13, 14
GND
Ground
3
RF
o
RF output
4, 5
V
S
Supply voltage
6
S
PU
Settling time power-up
7
BB
Ai
Baseband input A
8
BB
Ai
Baseband input A inverse
9
BB
Bi
Baseband input B
10
BB
Bi
Baseband input B inverse
12
LO
i
LO input
15, 16
Ph
adj
Phase adjustment (not necessary for regular applications)
3
U2790B
4583ACELL01/03
Absolute Maximum Ratings
Parameters
Symbol
Value
Unit
Supply voltage
V
S
6
V
Input voltage
V
i
0 to V
S
V
Junction temperature
T
j
125
C
Storage temperature range
T
Stg
-40 to +125
C
Operating Range
Parameters
Symbol
Value
Unit
Supply voltage range
V
S
4.5 to 5.5
V
Ambient temperature range
T
amb
-40 to +85
C
Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient SO16
R
thJA
110
K/W
Electrical Characteristics
Test conditions (unless otherwise specified): V
S
= 5 V, T
amb
= 25C, referred to test circuit, system impedance Z
O
= 50
W
,
f
LO
= 900 MHz, P
LO
= -10 dBm, V
BBi
= 1 V
pp
differential.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1.1
Supply voltage range
4, 5
V
S
4.5
5.5
V
A
1.2
Supply current
4, 5
I
S
24
30
37
mA
A
2
Baseband Inputs
2.1
Input-voltage range
(differential)
78,
910
V
BBi
1000
1500
mV
pp
D
2.2
Input impedance
(single ended)
Z
BBi
3.2
k
W
D
2.3
Input-frequency
range
(5)
f
BBi
0
250
MHz
D
2.4
Internal bias voltage
V
BBb
2.35
2.5
2.65
V
A
2.5
Temperature
coefficient
TC
BB
0.1
<1
mV/
C
D
3
LO Input
3.1
Frequency range
12
f
LOi
50
1000
MHz
D
3.2
Input level
(1)
P
LOi
- 12
- 10
- 5
dBm
D
3.3
Input impedance
Z
iLO
50
W
D
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. The required LO level is a function of the LO frequency.
2. In reference to an RF output level
-1 dBm and I/Q input level of 400 mV
pp
differential.
3. Sideband suppression is tested without connection at Pins 15 and 16. For higher requirements a potentiometer can be
connected at these pins.
4. For T
amb
= -30
C to +85
C and V
S
= 4.5 to 5.5 V.
5. By low impedance signal source.
4
U2790B
4583ACELL01/03
3.4
Voltage standing
wave ratio
VSWR
LO
1.4
2
D
3.5
Duty cycle range
DCR
LO
0.4
0.6
D
4
RF Output
4.1
Output level
3
P
RFo
-5
-1
+2
dBm
B
4.2
LO suppression
(2)
f
LO
= 900 MHz
f
LO
= 150 MHz
LO
RFo
30
32
35
35
dB
B
4.3
Sideband
suppression
(2, 3)
f
LO
= 900 MHz
f
LO
= 150 MHz
SBS
RFo
35
30
40
35
dB
B
4.4
Phase error
(4)
P
e
<1
deg.
D
4.5
Amplitude error
A
e
< +0.25
dB
D
4.6
Noise floor
V
BBi
= 2 V, V
BBi
= 3 V
V
BBi
= V
BBi
= 2.5 V
N
FL
-132
-144
dBm/Hz
D
4.7
VSWR
VSWR
RF
1.6
2
D
4.8
3rd-order baseband
harmonic
suppression
S
BBH
35
45
dB
D
4.9
RF harmonic
suppression
S
RFH
35
dB
D
5
Power-up Mode
5.1
Supply current
V
PU
0.5 V,
V
PU
= 1 V
4, 5
I
PU
10
1
A
D
5.2
Settling time
C
SPU
= 100 pF,
C
LO
= 100 pF
C
RFo
= 1 nF
6 to 3
t
sPU
10
s
D
6
Switching Voltage
6.1
Power-on
1
V
PUon
4
V
D
6.2
Power-up
1
V
PUdown
1
V
D
Electrical Characteristics (Continued)
Test conditions (unless otherwise specified): V
S
= 5 V, T
amb
= 25C, referred to test circuit, system impedance Z
O
= 50
W
,
f
LO
= 900 MHz, P
LO
= -10 dBm, V
BBi
= 1 V
pp
differential.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. The required LO level is a function of the LO frequency.
2. In reference to an RF output level
-1 dBm and I/Q input level of 400 mV
pp
differential.
3. Sideband suppression is tested without connection at Pins 15 and 16. For higher requirements a potentiometer can be
connected at these pins.
4. For T
amb
= -30
C to +85
C and V
S
= 4.5 to 5.5 V.
5. By low impedance signal source.
5
U2790B
4583ACELL01/03
Diagrams
Figure 3. Typical Single Sideband Output Spectrum at V
S
= 4.5 V and V
S
= 5.5 V,
f
LO
= 900 MHz, P
LO
= -10 dBm, V
BBI
= 1 V
PP
(differential) T
amb
= 25C
Figure 4. Typical GMSK Output Spectrum