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Электронный компонент: U4289BM

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Rev. 4757AAUDR10/03
Features
Reference Oscillator up to 15 MHz
Two Programmable 16-bit Dividers Adjustable from 2 to 65535
Fine Tuning Steps
AM
1 kHz
FM
2 kHz
Loop-push-pull Stage for AM/FM
High Signal/Noise Ratio
Description
The U4289BM is an integrated circuit in BICMOS technology for frequency synthesiz-
ers. It performs all the functions of a PLL radio tuning system and is controlled by a
2-wire bus. The device is designed for all frequency synthesizer applications in radio
receivers, as well as for RDS (Radio Data System) applications.
Figure 1. Block Diagram
R-divider
N-divider
I
2
C bus
interface
Oscillator
Phase
Current
sources
AM/FM
14
15
2
3
4
6
8
OSCOUT
OSCIN
SCL
AS
FMOSC
AMOSC
SDA
5
7
1
16
SWO1
11
12
13
9
10
PDAM
PDAMO
VA
PDFMO
PDFM
GND2
GND1
DD
V
switch
Switching
output
detector
AM/FM PLL
with 1 Switch
U4289BM
2
U4289BM
4757AAUDR10/03
Pin Configuration
Figure 2. Pinning SO16
1
2
3
4
5
6
7
8
13
14
15
16
SCL
SDA
AS
SWO1
GND1
OSCOUT
OSCIN
VA
PDAMO
PDAM
PDFM
V
DD
9
11
12
FMOSC
GND 2
PDFMO
AMOSC
10
Pin Description
Pin
Symbol
Function
1
V
DD
Supply voltage
2
SCL
Bus clock
3
SDA
Bus data
4
AS
Address selection
5
SWO1
Switching output
6
FMOSC
FM oscillator input
7
GND2
Ground 2 (analog)
8
AMOSC
AM oscillator input
9
PDFM
FM current output
10
PDFMO
FM analog output
11
PDAM
AM current output
12
PDAMO
AM analog output
13
VA
Analog supply voltage
14
OSCIN
Oscillator input
15
OSCOUT
Oscillator output
16
GND1
Ground 1 (digital)
3
U4289BM
4757AAUDR10/03
Functional
Description
The U4289BM is controlled via the 2-wire bus. One module address byte, two subad-
dress bytes and five data bytes enable programming.
The module address contains a programmable address bit A 1, which (along with
address select input AS, pin 4), enables the operation of two U4289BM devices in one
system. If bit A 1 is identical with the status of the address select input AS, the chip is
selected.
The subaddress determines which of the data bytes is transmitted first. If the subad-
dress of the R-divider is transmitted, the sequence of the next data bytes is DB 0
(Status), DB 1 and DB 2. If the subaddress of the N-divider is transmitted, the sequence
of the next data bytes is DB 3 and DB 4. The bit organization of the module address,
subaddress and 5 data bytes is shown in table "Bit Organization" on page 7.
Each transmission on the bus begins with the "START" condition and has to be ended
by the "STOP" condition (see table "Transmission Protocol" on page 7).
The integrated circuit U4289BM has two separate inputs for the AM and FM oscillators.
Pre-amplified AM and FM signals are fed to the 16-bit R-divider via the AM/FM switch.
The AM/FM switch is software controlled. Tuning steps can be selected by the 16-bit
R-divider.
Furthermore, the device provides a digital memory phase detector and two separate
current sources for AM and FM amplifier (charge pump) as given in the Table "Electrical
Characteristics" on page 4. It allows independent gain adjustment, providing high cur-
rent for high-speed tuning and low current for stable tuning.
Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Pins
Symbol
Value
Unit
Supply voltage
1
V
DD
-0.3 to +6
V
Input voltage
2, 3, 4, 6, 8, 14,
15
V
I
-0.3 to V
DD
+0.3
V
Output current
3, 5
I
O
-1 to +5
mA
Output drain voltage
5
V
OD
15
V
Analog supply voltage with 220
serial
resistance 2 minutes
(1)
13
V
A
V
A
6 to 15
24
V
V
Output current
9, 12
I
AO
-1 to +20
mA
Ambient temperature range
T
amb
-30 to +85
C
Storage temperature range
T
stg
-40 to +125
C
Junction temperature
T
j
125
C
Electrostatic handling
(modified MIL STD 883 D method 3015.7: all
supply pins connected together)
V
ESD
1000
V
Note:
1. Corresponding to the application circuit (Figure 8 on page 8)
Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient
R
thJA
160
K/W
4
U4289BM
4757AAUDR10/03
Electrical Characteristics
V
DD
= 5 V, V
A
= 10 V, T
amb
= 25
C, unless otherwise specified
Parameters
Test Conditions
Pins
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
1
V
DD
4.5
5.0
5.5
V
Quiescent supply current
AM mode/FM mode
1
I
DD
4.0
7.0
mA
FM input sensitivity,
R
G
= 50
, FMOSC
f
i
= 70 to 120 MHz
6
V
SFM
40
mV
rms
f
i
= 160 MHz
6
V
SFM
150
mV
rms
AM input sensitivity,
R
G
= 50
, AMOSC
f
i
= 0.6 to 35 MHz
8
V
SAM
40
mV
rms
Oscillator input sensitivity,
R
G
= 50
, OSCIN
f
i
= 0.1 to 15 MHz
14
V
SOSC
100
mV
rms
Phase Detector PDFM
Output current 1
10
I
PDFM
1600
2000
2400
A
Output current 2
10
I
PDFM
400
500
600
A
Leakage current
10
I
PDFML
20
nA
Phase Detector PDAM
Output current 1
11
I
PDAM
160
200
240
A
Output current 2
11
I
PDAM
40
50
60
A
Leakage current
11
I
PDAML
20
A
Analog Output PDFMO, PDAMO
Saturation voltage LOW
I = 15 mA
9, 12
V
satL
200
400
mW
Saturation voltage HIGH
I = 15 mA
9, 12
V
satH
9.5
9.95
V
Bus SCL, SDA, AS
Input voltage HIGH
2, 3, 4
V
iBUS
3.0
V
DD
V
Input voltage LOW
2, 3, 4
V
iBUS
0
1.5
V
Output voltage acknowledge LOW
I
SDA
= 3 mA
3
V
O
0.4
V
Clock frequency
2
f
SCL
100
kHz
Rise time SDA, SCL
2, 3
t
r
1
s
Fall time SDA, SCL
2, 3
t
f
300
ns
Period of SCL HIGH
2
t
H
4.0
s
Period of SCL LOW
2
t
L
4.7
s
5
U4289BM
4757AAUDR10/03
Note:
1. This is a period of time where the bus must be free from data transmission before a new transmission can be started.
Figure 3. FM Input Sensitivity, T
amb
= +85
C
Figure 4. FM Input Sensitivity, T
amb
= -30
C
Set-up Time
Start condition
t
sSTA
4.7
s
Data
t
sDAT
250
s
Stop condition
t
sSTOP
4.7
s
Time space
(1)
t
wSTA
4.7
s
Hold Time
Start condition
t
hSTA
4.0
s
DATA
t
hDAT
0
s
Electrical Characteristics (Continued)
V
DD
= 5 V, V
A
= 10 V, T
amb
= 25
C, unless otherwise specified
Parameters
Test Conditions
Pins
Symbol
Min.
Typ.
Max.
Unit
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
20.0
60.0
100.0
f
iFM
(MHz)
V
SF
M
(mA)
T = 85C
V
DD
=
5.5 V
5.0 V
4.5 V
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
20.0
60.0
100.0
f
iFM
(MHz)
V
SF
M
(mA)
T = -30C
V
DD
=
5.5 V
5.0 V
4.5 V