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Электронный компонент: U6805B

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Rev. 4763AAUTO11/03
Features
Six Input Comparators with Schmitt-trigger Characteristics
Input Clamping Current Capability of 10 mA
Integrated Protection Cells (EMC, ESD, RF) Dedicated to All Input Stages
Common Shutdown by Junction-temperature Monitor
Reset with Hysteresis at Low Voltage
ESD Protection According to Human Body Model:
2000 V (C = 100 pF, R = 1.5 k
W
)
Output Stages:
Short-circuit Protected
Load-dump Protected at 1 k
W
No Crosstalk on Adjacent Channels
Jump Start Possible
Description
The hex driver IC U6805B includes 6 non-inverted and current-limited output stages
with an open collector. Common thermal shutdown protects outputs against critical
junction temperature.
Each output can sink a current of 20 mA, and parallel output operation is possible. The
digital inputs have Schmitt-trigger function with pull-up resistors of up to 5 V.
Figure 1. Block Diagram
Under-
voltage
detection
V
S
= 5 V
7
1
3
4
8
5
6
2
V
S
V
I3
GND
Thermal
shutdown
V
I2
V
I1
V
S
V
O1
V
O2
V
O3
Hex Driver IC
with Thermal
Monitoring
U6805B
2
U6805B
4763AAUTO11/03
Pin Configuration
Figure 2. Pinning SO14
1
2
3
4
14
13
12
11
VO1
5
6
7
GND
10
9
8
VO2
VO3
VO4
VO5
VO6
VI1
VI2
VI3
VS
VI4
VI5
VI6
Pin Description
Pin
Symbol
Function
1
VO1
Output 1
2
VO2
Output 2
3
VO3
Output 3
4
GND
Ground
5
VO4
Output 4
6
VO5
Output 5
7
VO6
Output 6
8
VI6
Input 6
9
VI5
Input 5
10
VI4
Input 4
11
VS
Supply voltage, 5 V
12
VI3
Input 3
13
VI2
Input 2
14
VI1
Input 1
3
U6805B
4763AAUTO11/03
Basic Circuitry
The integrated circuit U6805B requires a stabilized supply voltage (V
S
= 5 V 5%) to
comply with its electrical characteristics. An external buffer capacitor of C = 100 nF is
recommended. An integrated 14 V Z diode between V
S
and ground protects the supply
pin.
All input stages are provided with an integrated 250 k
W
pull-up resistor and can be
directly connected to a microcontroller.
All output stages are open collectors, each capable of sinking 20 mA. Recommended
external components:
Pull-up resistor, R = 1 k
W
Capacitor to GND, C = 470 pF, see Figure 3 on page 4
Functional Description
General
ON state: Low level at the input stage activates the corresponding output stage.
OFF state: The internal pull-up resistor provides high level to the input comparator and
deactivates the output stage.
7 V Zener diodes between each input pin and GND are capable of 10 mA clamping
current without crosstalk on adjacent input stages.
A total clamping current of 30 mA should be observed with respect to the power
dissipation.
Current Limitation of the
Output Stages and
Overtemperature
Shutdown
A temperature-dependent current limitation in the range of 25 to 100 mA protects the
stages in case of a short-circuit. Additionally, the chip temperature is monitored. If
T
chip
> 148
C, all outputs are disabled and automatically enabled with a hysteresis of
D
T
Chip
> 5 K. Refer to the hex driver U6807B if the temperature shutdown feature is not
required.
Transients and Load
Dump
An integrated 28 V Zener diode protects each output stage against transients and load
dump (Schaffner pulses). With the help of an external 1 k
W
resistor, the output transistor
is capable of handling the corresponding current which flows during each of these condi-
tions. Apart from that, the outputs are short-circuit and overload protected.
Low-voltage Detection
When the supply voltage is switched on, a power-on reset pulse is generated internally
which disables all output stages until a defined supply-voltage level is reached. The
low-voltage detection is provided with a hysteresis of V
hyst
= 0.5 V typically.
4
U6805B
4763AAUTO11/03
Figure 3. Application Schematic
V
S
= 5 V
U6805B
V
O1
C
C
C
R
R
R
V
Batt
Load
100 nF
Micro-
controller
R
R
R
C
6
470 pF
C
C
6
1 k
V
O2
V
O3
V
O4
V
O5
V
O6
V
I6
V
I5
V
I4
V
I3
V
I2
V
I1
Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
Value
Unit
Supply voltage
V
S
7.0
V
Ambient temperature range
T
amb
-40 to +125
C
Storage temperature range
T
stg
-50 to +150
C
Maximum junction temperature
T
j
+150
C
Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient
R
thJA
120
K/W
5
U6805B
4763AAUTO11/03
Electrical Characteristics
V
S
= 5 V 5%, T
amb
= 27
C, reference point pin 4 (GND), unless otherwise specified, see Figure 1 on page 1
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Supply, Pin 11
Supply voltage
V
S
4.75
5.25
V
Supply current
Inputs open
Inputs switched to GND
I
S
I
S
0.8
7
3.2
13
mA
mA
Low-voltage detection threshold
ON
OFF
V
TH(ON)
V
TH(OFF)
3.7
3.0
4.6
3.8
V
V
Low-voltage hysteresis
V
hyst
0.55
1.05
V
Temperature shutdown
T
Chip
140
149
C
Temperature shutdown hysteresis
T
hyst
5
C
Inputs; Pins 8, 9, 10, 12, 13 and 14
Z-diode protection voltage
I
I
= 10 mA
V
I
6.7
8.5
V
Z-diode clamping current
I
I
10
mA
Pull-up resistor
R
I
170
250
305
k
W
Switching threshold
OFF
ON
V
I
V
I
3.3
1.8
V
V
Hysteresis
V
hyst
1.5
V
Outputs; Pins 1, 2, 3, 5, 6 and 7
Z-diode protection voltage
I
O
= 10 mA
V
O
26.5
V
Integrated capacitor
5
pF
Leakage current
I
Leak
2.5
A
Saturation voltage
I
O
= 20 mA
V
Sat
0.7
V
Current limitation
I
limit
25
100
mA
Propagation delay
470 pF, 1 k
W
, 20 V
t
d
5
s