KST-2005-001
1
2SA1981S
PNP Silicon Transistor
Description
Audio power amplifier application
Features
High h
FE
: h
FE
=100~320
Complementary pair with 2SC5344S
Ordering
Information
Type NO.
Marking
Package Code
2SA1981S
EA SOT-23
: h
FE
rank
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Emitter
3. Collector
2.4
0.1
1.30
0.1
0.45~0.60
0.
4 T
y
p
.
2.
9
0.
1
1.
12 M
a
x.
0.
38
0~0.
1
0.
124
-0.
03
+0.
0
5
3
1
2
1.
90 T
y
p
.
0.2 Min.
KST-2005-001
2
2SA1981S
Absolute maximum ratings
(Ta=25
C)
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
-35 V
Collector-Emitter voltage
V
CEO
-30 V
Emitter-Base voltage
V
EBO
-5 V
Collector current
I
C
-800
mA
Collector dissipation
P
C
200
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol Test
Condition Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=-500
A, I
E
=0
-35 - - V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=-1mA, I
B
=0 -30
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=-50
A, I
C
=0
-5 - - V
Collector cut-off current
I
CBO
V
CB
=-35V, I
E
=0 -
-
-0.1
A
Emitter cut-off current
I
EBO
V
EB
=-5V, I
C
=0 -
-
-0.1
A
DC current gain
h
FE
*
V
CE
=-1V, I
C
=-100mA 100
-
320
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=-500mA, I
B
=-20mA -
-
-0.5
V
Transition frequency
f
T
V
CE
=-5V, I
E
=10mA -
120
-
MHz
Collector output capacitance
Cob
V
CB
=-10V, I
E
=0, f=1MHz
-
19
-
pF
*
:
h
FE
rank / O : 100~200, Y : 160~320
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