KST-9007-001
1
2SC5345
NPN Silicon Transistor
Description
RF amplifier
Features
High current transition frequency
f
T
=550MHz(Typ.), [V
CE
=6V, I
E
=-1mA]
Low output capacitance :
C
ob
=1.4pF(Typ.) [V
CB
=6V, I
E
=0]
Low base time constant and high gain
Excellent noise response
Ordering
Information
Type NO.
Marking
Package Code
2SC5345
C5345
TO-92
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
4.5
0.1
4.
5
0.
1
0.4
0.02
1.27 Typ
.
2.54 Typ
.
1 2 3
3.45
0.1
2.25
0.1
2.06
0.1
1.
20
0.
1
0.
38
PIN Connections
1. Emitter
2. Collector
3. Base
14.
0
0.
40
KST-9007-001
2
Absolute maximum ratings
Ta=25
C
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
30 V
Collector-Emitter voltage
V
CEO
20 V
Emitter-Base voltage
V
EBO
4 V
Collector current
I
C
20
mA
Collector dissipation
P
C
625
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55~150
C
Electrical Characteristics
Ta=25
C
Characteristic
Symbol Test
Condition Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=10
A, I
E
=0
30 - - V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=5mA, I
B
=0 20
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=10
A, I
C
=0
4 - - V
Collector cut-off current
I
CBO
V
CB
=30V, I
E
=0 -
-
0.5
A
Emitter cut-off current
I
EBO
V
EB
=4V, I
C
=0 -
-
0.5
A
DC current gain
h
FE
*
V
CE
=6V, I
C
=1mA 40
-
240
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=10mA, I
B
=1mA -
-
0.3
V
Transition frequency
f
T
V
CE
=6V, I
E
=-1mA -
550
-
MHz
Collector output capacitance
C
ob
V
CB
=6V, I
E
=0, f=1MHz
-
1.4
-
pF
* : h
FE
rank / R : 40~80, O : 70~140, Y : 120~240
2SC5345
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