KST-B015-001
1
STB772
PNP Silicon Transistor
Description
Suitable for low voltage large current drivers
Excellent h
FE
Linearity
Complementary pair with STD882
Switching Application
Ordering
Information
Type NO.
Marking
Package Code
STB772
STB772
MPT
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Emitter
2. Collector
3. Base
2.50.1
.
1
6.50.2
1.2 Max.
5.00.2
3.
4
0.
2
21.
5
1.
0
2.
0
0.
1
0.
5
0.
2
1.
1
0.
1
8.
5
0.
2
12.
5 M
i
n
.
0.4~0.6
0.70 Max.
2
3
KST-B015-001
2
STB772
Absolute maximum ratings
(Ta=25
C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
-15
V
Collector-Emitter voltage
V
CEO
-12
V
Emitter-Base voltage
V
EBO
-5
V
Collector current
I
C
-5
A
Collector dissipation
P
C
1.2
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
* : When mounted on 40400.8mm ceramic substate
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=-50A, I
E
=0
-15
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=-1mA, I
B
=0
-12
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=-50A, I
C
=0
-5
-
-
V
Collector cut-off current
I
CBO
V
CB
=-12V, I
E
=0
-
-
-1
A
Emitter cut-off current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-1
A
h
FE1
V
CE
=-2V, I
C
=-500mA
160
-
320
-
DC current gain
h
FE2
V
CE
=-2V, I
C
=-3A
40
-
-
-
Collector-Emitter on voltage
V
CE(sat1)
I
C
=-3A, I
B
=-150mA
-
-
-0.5
V
Base-Emitter on voltage
V
BE(sat)
I
C
=-3A, I
B
=-150mA
-
-
-1.2
V
Transition frequency
f
T
V
CB
=-5V, I
C
=-500mA
-
150
-
MHz
Collector output capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
-
50
pF
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