KST-2007-001
1
BC847
NPN Silicon Transistor
Descriptions
General purpose application
Switching application
Features
High voltage : V
CEO
=45V
Complementary pair with BC857
Ordering
Information
Type NO.
Marking
Package Code
BC847
RR SOT-23
: h
FE
rank
Outline Dimensions unit :
mm
PIN Connections
1. Base
2. Emitter
3. Collector
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
2.4
0.1
1.30
0.1
0.45~0.60
0.
4 T
y
p
.
2.
9
0.
1
1.
12 M
a
x.
0.
38
0~0.
1
0.
124
-0.
03
+0.
0
5
3
1
2
1.
90 T
y
p
.
0.2 Min.
KST-2007-001
2
BC847
Absolute maximum ratings
(Ta=25
C)
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
50 V
Collector-Emitter voltage
V
CEO
45 V
Emitter-base voltage
V
EBO
5 V
Collector current
I
C
100
mA
Collector dissipation
P
C
200
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol Test
Condition Min.
Typ.
Max.
Unit
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0 45
-
-
V
Base-Emitter turn on voltage
V
BE(ON)
V
CE
=5V, I
C
=2mA 550
-
700
mV
Base-Emitter saturation voltage
V
BE(sat)
I
C
=100mA, I
B
=5mA -
900
-
mV
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=100mA, I
B
=5mA -
-
600
mV
Collector cut-off current
I
CBO
V
CB
=35V, I
E
=0 -
-
15
nA
DC current gain
h
FE
*
V
CE
=5V, I
C
=2mA 110
-
800
-
Transition frequency
f
T
V
CE
=5V, I
C
=10mA
f=100MHz
- 150 - MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
-
4.5
pF
Noise figure
NF
V
CE
=5V, I
C
=200
A,
f=1KHz, Rg=2K
- - 10 dB
* : h
FE
rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
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