KST-9065-000
1
BF422
NPN Silicon Transistor
Descriptions
High voltage application
Monitor equipment application
Features
Collector-Emitter voltage : V
CEO
=250V
Complementary pair with BF423
Ordering
Information
Type NO. Marking Package Code
BF422 BF422 TO-92
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
4.5
0.1
4.5
0.1
0.4
0.02
1.27 Typ.
2.54 Typ.
1
2
3
3.45
0.1
2.25
0.1
2.06
0.1
1.20
0.
1
0.38
PIN Connections
1. Emitter
2. Collector
3. Base
KST-9065-000
2
BF422
Absolute maximum ratings
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
250
V
Collector-Emitter voltage
V
CEO
250
V
Emitter-base
V
EBO
5
V
Collector current
I
C
100
mA
Collector dissipation
P
C
625
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0
250
-
-
V
Collector cut-off current
I
CBO
V
CB
=200V, I
E
=0
-
-
100
nA
Emitter cut-off current
I
EBO
V
EB
=5V, I
C
=0
-
-
100
nA
DC current gain
h
FE
V
CE
=20V, I
C
=25mA
50
-
-
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=30mA, I
B
=5mA
-
-
0.6
V
Transistor frequency
f
T
V
CE
=20V, I
C
=10mA,
f=100MHz
-
100
-
MHz
Collector output capacitance
C
ob
V
CB
=20V, I
E
=0, f=1MHz
-
1
-
pF
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