KST-9085-000
1
DN200
NPN Silicon Transistor
Features
Extremely low collector-to-emitter saturation voltage
( V
CE(SAT)
= 0.3V Typ. @I
C
/I
B
=1A/50mA)
Suitable for low voltage large current drivers
Complementary pair with DP200
Switching Application
Ordering
Information
Type NO. Marking Package Code
DN200 DN200 TO-92
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Emitter
2. Collector
3. Base
KST-9085-000
2
DN200
Absolute maximum ratings
(Ta=25
C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
15
V
Collector-Emitter voltage
V
CEO
12
V
Emitter-Base voltage
V
EBO
5
V
Collector current
I
C
2
A
Collector dissipation
P
C
625
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=50
A, I
E
=0
15
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0
12
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=50
A, I
C
=0
5
-
-
V
Collector cut-off current
I
CBO
V
CB
=12V, I
E
=0
-
-
0.1
A
Emitter cut-off current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
A
h
FE1
V
CE
=1V, I
C
=100mA
200
-
450
-
DC current gain
h
FE2
V
CE
=1V, I
C
=2A
40
-
-
-
V
CE(sat)1
I
C
=1A, I
B
=50mA
-
-
0.3
Collector-Emitter saturation voltage
V
CE(sat)2
I
C
=2A, I
B
=50mA
-
-
0.5
V
Base-Emitter saturation voltage
V
BE(sat)
I
C
=1A, I
B
=50mA
-
-
1.2
V
Transition frequency
f
T
V
CE
=5V, I
C
=50mA
-
260
-
MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
5
-
pF
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