KST-2118-000
1
DP100S
PNP Silicon Transistor
Features
Extremely low collector-to-emitter saturation voltage
( V
CE(SAT)
= -0.25V Typ. @I
C
/I
B
=-400mA/-20mA)
Suitable for low voltage large current drivers
Complementary pair with DN100S
Switching Application
Ordering
Information
Type NO. Marking Package Code
DP100S P03 SOT-23F
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Emitter
3. Collector
0.4
0.05
0~0.1
3
1
2
1.90 BSC
2.9
0.1
0.15
0.05
2.4
0.1
0.9
0.1
1.6
0.1
KST-2118-000
2
DP100S
Absolute maximum ratings
(Ta=25
C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
-15
V
Collector-Emitter voltage
V
CEO
-12
V
Emitter-Base voltage
V
EBO
-5
V
Collector current
I
C
-1
A
Collector dissipation
P
C
200
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=-50
A, I
E
=0
-15
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=-1mA, I
B
=0
-12
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=-50
A, I
C
=0
-5
-
-
V
Collector cut-off current
I
CBO
V
CB
=-12V, I
E
=0
-
-
-0.1
A
Emitter cut-off current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-0.1
A
h
FE1
V
CE
=-1V, I
C
=-100mA
200
-
450
-
DC current gain
h
FE2
V
CE
=-1V, I
C
=-1A
70
-
-
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=-400mA, I
B
=-20mA
-
-
-0.3
V
Base-Emitter saturation voltage
V
BE(sat)
I
C
=-400mA, I
B
=-20mA
-
-
-1.2
V
Transition frequency
f
T
V
CE
=-5V, I
C
=-50mA
-
330
-
MHz
Collector output capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
9
-
pF
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