KST-2012-000
1
SBT5551
NPN Silicon Transistor
Descriptions
General purpose amplifier
High voltage application
Features
high collector breakdown voltage : V
CBO
= 180V, V
CEO
= 160V
Low collector saturation voltage : V
CE(sat)
=0.5V(MAX.)
Complementary pair with SBT5401
Ordering
Information
Type NO. Marking Package Code
SBT5551 FNF SOT-23
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Emitter
3. Collector
2.40.1
1.300.1
0.45~0.60
0.
4 T
y
p
.
2.
9
0.
1
1.
12 Max.
0.
38
0~0.
1
0.
124
-
0
.
03
+0.
0
5
3
1
2
1.
90 T
y
p
.
0.2 Min.
KST-2012-000
2
SBT5551
Absolute maximum ratings
(Ta=25
C)
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
180 V
Collector-Emitter voltage
V
CEO
160 V
Emitter-Base voltage
V
EBO
6 V
Collector current
I
C
600
mA
Collector dissipation
P
C
200
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150 C
Electrical Characteristics
(Ta=25
C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=100A, I
E
=0
180 - - V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0 160
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=10A, I
C
=0
6 - - V
Collector cut-off current
I
CBO
V
CB
=120V, I
E
=0 -
-
100
nA
Emitter cut-off current
I
EBO
V
EB
=4V, I
C
=0 -
-
100
nA
DC current gain
h
FE (1)
V
CE
=5V, I
C
=1mA 80
-
-
DC current gain
h
FE (2)
V
CE
=5V, I
C
=10mA 80
-
250
-
DC current gain
h
FE (3)
V
CE
=5V, I
C
=50mA 30
-
-
Collector-Emitter saturation voltage
V
CE(sat)(1)
*
I
C
=10mA, I
B
=1mA -
-
0.2
V
Collector-Emitter saturation voltage
V
CE(sat)(2)
*
I
C
=50mA, I
B
=5mA -
-
0.5
V
Base-Emitter saturation voltage
V
BE(sat)(1)
*
I
C
=10mA, I
B
=1mA -
-
1
V
Base-Emitter saturation voltage
V
BE(sat)(2)
*
I
C
=50mA, I
B
=5mA -
-
1
V
Transition frequency
f
T
V
CE
=10V, I
C
=10mA 100
-
400
MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
-
6
pF
* : Pulse Tester : Pulse Width 300
s, Duty Cycle 2.0%
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