16 Me
16 Me
16 Me
16 Me
16 Meg FPM DRAM
g FPM DRAM
g FPM DRAM
g FPM DRAM
g FPM DRAM
AS4C4M4
Austin Semiconductor, Inc.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
AS4C4M4
Rev. 1.0 5/03
4M x 4 CMOS DRAM
WITH FAST PAGE MODE, 5 VOLT
AVAILABLE AS MILITARY
SPECIFICATIONS
MIL-STD-883
FEATURES
Fast Page Mode Operation
CAS\-before-RAS\ Refresh Capability
RAS\-only and Hidden Refresh Capability
Self-refresh Capability
Fast Parallel Test Mode Capability
TTL Compatible Inputs and Outputs
Early Write or Output Enable Controlled Write
JEDEC Standard Pinout
Single +5V (10%) Power Supply
OPTIONS
MARKINGS
Timing
60ns access
-6
70ns access
-7
Package
Plastic TSOP, 24-pin
DG
Operating Temperature Ranges
Military (-55
o
C to +125
o
C)
XT
Industrial (-40
o
C to +85
o
C)
IT
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS4C4M4DG is a
4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering
high speed random access of memory cells within the same
row. This device features a +5V (10%) power supply,
refresh cycle (2K), and fast access times (60 and 70ns). Other
features include CAS\-before-RAS\, RAS\-only refresh, and
Hidden refresh capabilities. This 4M x 4 Fast Page Mode DRAM
is fabricated using an advanced CMOS process to realize high
bandwidth, low power consumption and high reliability. It may
be used as main memory for high level computers,
microcomputers and personal computers.
PIN ASSIGNMENT
(Top View)
24 Pin TSOP (DG)
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
Vss
DQ3
DQ2
CAS\
OE\
A9
A8
A7
A6
A5
A4
Vss
Vcc
DQ0
DQ1
W\
RAS\
NC
A10
A0
A1
A2
A3
Vcc
PIN
FUNCTION
A0 - A10
Address Inputs
DQ0 -DQ3
Data In/Out
V
SS
Ground
RAS\
Row Address Strobe
CAS\
Column Address Strobe
W\
Read/Write Input
OE\
Data Output Enable
V
CC
Power (+5V)
NC
No Connect
PIN ASSIGNMENT
For more products and information
please visit our web site at
www.austinsemiconductor.com
PERFORMANCE RANGE
SPEED
t
RAC
t
CAC
t
RC
t
PC
UNITS
-6
60
15
110
40
ns
-7
70
18
130
45
ns
16 Me
16 Me
16 Me
16 Me
16 Meg FPM DRAM
g FPM DRAM
g FPM DRAM
g FPM DRAM
g FPM DRAM
AS4C4M4
Austin Semiconductor, Inc.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
AS4C4M4
Rev. 1.0 5/03
FUNCTIONAL BLOCK DIAGRAM
RAS\
V
CC
CAS\
V
SS
W\
(A0 - A10)
(A0 - A10)
OE\
DQ0
to
DQ3
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Memory Array
4,194,304 x 4
Cells
Row Decoder
Column Decoder
Sense Amps & I/O
Data In
Buffer
Data Out
Buffer
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect reliability. Junction temperature depends
upon package type, cycle time, loading, ambient temperature
and airflow, and humidity (plastics).
ABSOLUTE MAXIMUM RATINGS*
Voltage on any pin relative to V
CC
(V
IN
, V
OUT
) .....-1.0V to +7.0V
Voltage on V
CC
supply relative to V
SS
(V
CC
).........-1.0V to +7.0V
Storage Temperature (T
stg
)................................-55C to +150C
Power Dissipation (P
D
).............................................................1W
Short Circuit Output Current (I
OS
Address).........................50mA
ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(-55
o
C < T
A
< +125
o
C & -40
o
C < T
A
< +85
o
C ; Vcc = 5V +10%)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Supply Voltage
V
CC
4.5
5.0
5.5
V
Input High Voltage
V
IH
2.4
---
V
CC
+ 0.5
1
V
Input Low Voltage
V
IL
-0.5
2
---
0.8
V
NOTES:
1. V
CC
+ 2.0V/20ns, Pulse width is measured at V
CC
2. -2.0V/20ns, Pulse width is measured at V
SS
16 Me
16 Me
16 Me
16 Me
16 Meg FPM DRAM
g FPM DRAM
g FPM DRAM
g FPM DRAM
g FPM DRAM
AS4C4M4
Austin Semiconductor, Inc.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
AS4C4M4
Rev. 1.0 5/03
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55
o
C < T
A
< +125
o
C & -40
o
C < T
A
< +85
o
C ; Vcc = 5V +10%)
PARAMETER
SYMBOL
MIN
MAX
UNITS
Input Leakage Current (any input 0<V
IN
<V
IN
+0.5V,
all other input pins not under test = 0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V<V
OUT
<V
CC
)
I
O(L)
-5
5
uA
Output High Voltage (I
OH
= -5mA)
V
OH
2.4
---
V
Output Low Voltage (I
OL
= 4.2mA)
V
OL
---
0.4
V
-60
-70
I
CC1
*
Operating Current (RAS\ and CAS\, Address cycling @ t
RC
= MIN),
Power = Don't Care
110
100
mA
I
CC2
Standby Current (RAS\ = CAS\ = W\ = V
IH
)
Power = Normal L
3
3
mA
I
CC3
*
RAS\-only Refresh Current (CAS\ = V
IH
, RAS\, Address cycling @
t
RC
= MIN), Power = Don't Care
110
100
mA
I
CC4
*
Fast Page Mode Current (RAS\ = V
IL
, CAS\, Address cycling @
t
PC
= MIN), Power = Don't Care
90
80
mA
I
CC5
Standby Current (RAS\ = CAS\ = W\ = Vcc - 0.2V)
Power = Normal L
2
2
mA
I
CC6
*
CAS\-BEFORE-RAS\ Refresh Current (RAS\ and CAS\ cycling @
t
RC
= MIN), Power = Don't Care
110
100
mA
I
CC7
Battery back-up current, Average power supply current, Battery back-
up mode, Input high voltage (V
IH
) = V
CC
- 0.2V, Input low voltage
(V
IL
) = 0.2V, CAS\ = 0.2V, DQ = Don't care, t
RC
= 62.5us (2K/L-ver),
t
RAS
= t
RAS
min ~ 300ns
1
1
mA
I
CCS
Self Refresh Current, RAS\ = CAS\ = 0.2V, W\ = OE\ = A0 ~ A11 =
V
CC
- 0.2V or 0.2V, DQ0 ~ DQ3 = V
CC
- 0.2V, 0.2V or Open
1
1
MAX
SYMBOL
PARAMETERS
UNITS
NOTES:
*I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open. I
CC
is specified as an
average current. In I
CC1
, I
CC3
, and I
CC6
address can be changed maximum once while RAS\ = V
IL
. In I
CC4
, address can be changed maximum once within one
fast page mode cycle time, t
PC
.
16 Me
16 Me
16 Me
16 Me
16 Meg FPM DRAM
g FPM DRAM
g FPM DRAM
g FPM DRAM
g FPM DRAM
AS4C4M4
Austin Semiconductor, Inc.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
AS4C4M4
Rev. 1.0 5/03
CAPACITANCE (T
A
< +25
o
C ; Vcc = 5V +10%)
PARAMETER
SYMBOL
MAX
UNITS
Input capacitance (A0 - A11)
C
IN1
6
pF
Input capacitance (RAS\, CAS\, W\, OE\)
C
IN2
8
pF
Output capacitance (DQ0 - DQ3)
C
DQ
8
pF
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
1,2
(-55
o
C<T
A
<+125
o
C & -40
o
C<T
A
<+85
o
C; Vcc = 5V +10%; V
IH
/V
IL
= 2.4/0.8V; V
OH
/V
OL
= 2.4/0.4V)
MIN
MAX
MIN
MAX
t
RC
Random read or write cycle time
110
130
ns
t
RWC
Read-modify-write cycle time
155
185
ns
t
RAC
Access time from RAS\
60
70
ns
3, 4, 10
t
CAC
Access time from CAS\
15
20
ns
3, 4, 5
t
AA
Access time from column address
30
35
ns
3, 10
t
CLZ
CAS\ to output in Low-Z
0
0
ns
3
t
OFF
Output buffer turn-off delay
0
15
0
15
ns
6
t
T
Transition time (raise and fall)
3
50
3
50
ns
2
t
RP
RAS\ precharge time
40
50
ns
t
RAS
RAS\ pulse width
60
10K
70
10K
ns
t
RSH
RAS\ hold time
15
17
ns
t
CSH
CAS\ hold time
60
65
ns
t
CAS
CAS\ pulse width
15
10K
18
10K
ns
t
RCD
RAS\ to CAS\ delay time
20
45
25
50
ns
4
t
RAD
RAS\ to column address delay time
15
30
17
35
ns
10
t
CRP
CAS\ to RAS\ precharge time
5
5
ns
t
ASR
Row address set-up time
0
0
ns
t
RAH
Row address hold time
10
10
ns
t
ASC
Column address set-up time
0
0
ns
t
CAH
Column address hold time
10
12
ns
t
RAL
Column address to RAS\ lead time
30
35
ns
t
RCS
Read command set-up time
0
0
ns
t
RCH
Read command hold time referenced to CAS\
0
0
ns
8
t
RRH
Read command hold time referenced to RAS\
0
0
ns
8
t
WCH
Write command hold time
10
12
ns
t
WP
Write command pulse width
10
12
ns
t
RWL
Write command to RAS\ lead time
15
17
ns
t
CWL
Write command to CAS\ lead time
15
17
ns
UNITS
NOTES
SYMBOL
PARAMETER
-60
-70
16 Me
16 Me
16 Me
16 Me
16 Meg FPM DRAM
g FPM DRAM
g FPM DRAM
g FPM DRAM
g FPM DRAM
AS4C4M4
Austin Semiconductor, Inc.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
AS4C4M4
Rev. 1.0 5/03
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
1,2
(CONTINUED)
MIN
MAX
MIN
MAX
t
DS
Data set-up time
0
0
ns
9
t
DH
Data hold time
10
12
ns
9
t
REF
Refresh period
32
32
ms
t
WCS
Write command set-up time
0
0
ns
7
t
CWD
CAS\ to W\ delay time
40
45
ns
7
t
RWD
RAS\ to W\ delay time
85
90
ns
7
t
AWD
Column address to W\ delay time
55
60
ns
7
t
CPWD
CAS\ precharge to W\ delay time
60
65
ns
t
CSR
CAS\ set-up time (CAS\-before-RAS\ refresh)
5
5
ns
t
CHR
CAS\ hold time (CAS\-before-RAS\ refresh)
10
15
ns
t
RPC
RAS\ to CAS\ precharge time
5
5
ns
t
CPA
Access time from CAS\ precharge
35
40
ns
3
t
PC
Fast Page cycle time
40
45
ns
t
PRWC
Fast Page read-modify-write cycle time
85
95
ns
t
CP
CAS\ precharge time (Fast Page Cycle)
10
10
ns
t
RASP
RAS\ pulse width (Fast Page Cycle)
60
100K
70
100K
ns
t
RHCP
RAS\ hold time from CAS\ precharge
35
40
ns
t
OEA
OE\ access time
15
17
ns
t
OED
OE\ to data delay
15
17
ns
t
OEZ
Output buffer turn off delay time from OE\
0
15
0
17
ns
6
t
OEH
OE\ command hold time
15
17
ns
t
WTS
Write command set-up time (Test mode in)
10
10
ns
11
t
WTH
Write command hold time (Test mode in)
10
10
ns
11
t
WRP
W\ to RAS\ precharge time (C\-B-R\ refresh)
10
10
ns
t
WRH
W\ to RAS\ hold time (C\-B-R\ refresh)
10
10
ns
t
RASS
RAS\ pulse width (C\-B-R\ self refresh)
100
110
us
13, 14, 15
t
RPS
RAS\ precharge time (C\-B-R\ self refresh)
110
120
ns
13, 14, 15
t
CHS
CAS\ hold time (C\-B-R\ self refresh)
-50
-50
ns
13, 14, 15
UNITS
NOTES
SYMBOL
PARAMETER
-60
-70
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