850nm
wavelength
range
High wavelength
uniformity
1x4, 1x8 and
1x12 arrays
Low threshold
current
Data rates
up to 12.5 Gbps
Flip-chip bondable,
isolated electrodes
F e a t u r e s
Ordering information
Part Number
Description
APA4101040000
1x4 array
isolated contacts
APA4101080000
1x8 array
isolated contacts
APA4101120000
1x12 array
isolated contacts
N x 10 Gbps
Multi-Mode
VCSEL Array
March 2003
Preliminary Datasheet
Mechanical
Solder Pad
480
Units in
m
Avalon Photonics Ltd, Badenerstrasse 569
8048 Zurich, Switzerland
Tel: +41 1 498 1411 Fax: +41 1 498 1412
Email: vcsel@avap.ch
Internet: www.avalon-photonics.com
E l e c t r o - o p t i c a l c h a r a c t e r i s t i c s
( f o r i n d i v i d u a l l a s e r s )
Parameter*
Symbol
Conditions
Ratings
Units
Min Typ Max
Threshold current
I
th
0.5
1
1.5
mA
Optical output power
P
out
l
op
= 8 mA
2.5
mW
Operating voltage
V
op
l
op
= 8 mA
1.9
V
Emission wavelength
840
850
860
nm
Spectral bandwidth, RMS
l
op
= 8 mA
0.45
nm
Slope efficiency
0.35
mW/mA
Beam divergence
Full width,
1
/e
2
,
28
32
I
op
= 8 mA
Differential resistance
R
Diff
l
op
= 8 mA
50
70
Relative intensity noise
RIN
12
(OMA)
l
op
= 8 mA
-128
dB/Hz
Bandwidth
f
3dB
l
op
= 8 mA
10
GHz
*(T=25C unless otherwise noted)
The above specifications are subject to change
without notice
Parameter
Symbol
Ratings
Units
Min Typ Max
Temperature tuning coefficient
/
T
0.06
nm/K
Threshold current variation 0 to+70C
I
th
1
mA
T h e r m a l c h a r a c t e r i s t i c s
Parameter*
Rating
Units
Optical output power
8
mW
Peak forward current
15
mA
Electrical power dissipation
30
mW/laser
Reverse voltage
5
V
Operating temperature
0 to +85
C
Storage temperature
-40 to +100
C
A b s o l u t e m a x i m u m r a t i n g s
INVISIBLE LASER RADIATION
- AVOID DIRECT EXPOSURE
PEAK POWER : 4 mW
WAVELENGTH : 850 nm
CLASS IIIa LASER PRODUCT
N x 10 Gbps
Multi-Mode
VCSEL Array
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