Single VCSEL
chip
850nm
wavelength
range
Low threshold
current
Data rates
up to 3.5 Gbps
Back monitor
photo diode
2.5 Gbps
Multi-Mode
VCSEL T056
F e a t u r e s
1
2
3
5.6
2.3
3.55
TO-56 window package
dimension
Electrical
connections
Ordering information
Part Number APA7201011500
3
1
2
Pin out
PD
LD
March 2003
Avalon Photonics Ltd, Badenerstrasse 569
8048 Zurich, Switzerland
Tel: +41 1 498 1411 Fax: +41 1 498 1412
Email: vcsel@avap.ch
Internet: www.avalon-photonics.com
The above specifications are subject to change
without notice
2.5 Gbps
Multi-Mode
VCSEL T056
INVISIBLE LASER RADIATION
- AVOID DIRECT EXPOSURE
PEAK POWER : 3.5 mW
WAVELENGTH : 850 nm
CLASS IIIb LASER PRODUCT
*(T=25C unless otherwise noted)
E l e c t r o - o p t i c a l c h a r a c t e r i s t i c s
Parameter*
Symbol Conditions
Ratings
Units
Min Typ Max
VCSEL
Threshold current
I
th
1.0
1.8
2.5
mA
Optical output power
P
out
I
op
= 6 mA
0.7
mW
Operating voltage
V
op
I
op
= 6 mA
1.9
V
Emission wavelength
I
op
= 6 mA
840
850
860
nm
Spectral bandwidth, RMS
I
op
= 6 mA
0.85
nm
Slope efficiency
I
op
= 6 mA
0.1 0.17 0.25
mW/mA
Beam divergence
Full width,
1
/e
2
, I
op
= 6 mA
27
Diferential resistance
R
Diff
I
op
= 6 mA
25
45
50
bandwidth
f
3dB
I
op
= 6 mA
3.5
5
GHz
Relative intensitiy noise
RIN
12
(OMA)
I
op
= 6 mA, 1GHz
-122
dB/Hz
Back Monitor Photo Diode
Dark current
Id
pd
Bias = 3 V
1
30
nA
Capacitance
C
pd
Bias = 3 V
6
pF
Reverse breakdown voltage
BVR
pd
30
V
Monitor current
I
pd
P
out
= 0.5 mW
70
200
400
A
Parameter
Symbol
Ratings
Units
Min
Typ
Max
Temperature tuning coefficient
/
T
0.06
nm/K
Threshold current variation 0 70C
I
th
0.8
mA
T h e r m a l c h a r a c t e r i s t i c s
Parameter*
Rating
Units
Optical output power
3.5
mW
Peak forward current
10
mA
VCSEL reverse voltage
5
V
PIN Photodiode reverse voltage
10
V
PIN Photodiode forward current
10
mA
Operating temperature
0 to +85
C
Storage temperature
-40 to +100
C
Lead solder temperatur (for 10 sec.)
260
C
A b s o l u t e m a x i m u m r a t i n g s
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