@vic
AV13005
Copyright Avic Electronics Corp.
1
Website:
http://www.avictek.com
TO-220 NPN SILICON POWER TRANSISTOR
AV13005 TRANSISTOR NPN
FEATURES
Power dissipation
P
CM
: 1.5 WTamb=25
Collector current
I
CM
: 4.0 A
Collector-base voltage
V
(BR)CBO
: 700 V
Operating and storage junction temperature range
T
J
T
stg
: -55 to +150
ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 1000
A I
E
=0
700
V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= 10 mA I
B
=0
400
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 1000
A I
C
=0
9
V
Collector cut-off current
I
CBO
V
CB
= 700 V I
E
=0
1000
A
Collector cut-off current
I
CEO
V
CE
= 400 V I
B
=0
100
A
Emitter cut-off current
I
EBO
V
EB
= 9 V I
C
=0
1000
A
DC current gain
H
FE
2
V
CE
= 5V, I
C
= 1000 mA
10
40
Collector-emitter saturation voltage
V
CE
(sat) I
C
= 2000 mA, I
B
= 500 mA
0.6
V
Base-emitter saturation voltage
V
BE
(sat) I
C
= 2000mA, I
B
= 500mA
1.6
V
Transition frequency
f
T
V
CE
= 10 V, I
C
= 500 mA
f =
1MHz
5
MHz
Fall time
T
F
0.9
Storage time
T
S
I
B1
= - I
B2
=0.4A, I
C
=2A
V
CC
=120V
4.0
S
CLASSIFICATION OF HFE
(2)
Rank
A
B
1
B
2
C
D
E
Range
10-15 15-20 20-25 25-30 30-35 35-40
@vic
AV13005
Copyright Avic Electronics Corp.
2
Website:
http://www.avictek.com
Typical Characteristics
h EF - DC Current Gain
V
R
Reverse Voltage
V
BE
, BASEEMITTER VOLTAGE
Figure 4. CollectorEmitter Saturation
V l
I
C
, COLLECTOR CURRENT (AMP)
I
C
- Collector Current (A)
C,Capacitance (pF
)
V
BE
- Base-Em
itter Voltage (V)
V
CE
- Collector-Em
itter Voltage (V)
Figure 2. Collector Saturation
R i
I
C
, COLLECTOR CURRENT (AMP)
Figure 3. BaseEmitter Voltage
100
70
50
30
20
10
7
T
J
=150 C
0.04
5
1
2.0
25 C
-55 C
V
CE
= 2V
V
CE
= 5V
1.6
1.2
0.8
0.4
0
0.03 0.05 0.1
I
C
=1A
4A
3A
2A
10k
700
500
+0.6
1k
-0.4
-0.2
0
+0.2
+0.4
V
CE
=250V
300
200
2k
1k
20
1
100 300
C
ib
C
ob
Figure 1. DC Current Gain
0.06 0.1
0.2
0.6
2
4
0.4
0.2
0.5
0.3
0.7 1
2 3
T
J
=25 C
I
C
, COLLECTOR CURRENT (AMP)
0.04 0.06 0.1
0.2 0.4 0.6 1
2
4
T
J
=-55 C
1.3
1.1
0.9
0.7
0.5
0.3
25 C
25 C
150 C
V
BE(sat)
@ I
C
/I
B
= 4
V
BE(on)
@ V
CE
= 2
I
C
/I
B
= 4
25 C
150 C
T
J
=-55 C
V
CE(
s
a
t
)
- Collector-Em
itter
Satlration Volta
g
e
(
V
)
0.55
0.45
0.35
0.25
0.15
0.05
0.04 0.06 0.1 0.2
0.4 0.6 1
2
4
I
B
, BASE CURRENT (AMP)
T
J
=150C
125C
100C
75C
50C
25C
100
10
1
0.1
Figure 5. Collector Cutoff Region
Figure 6. Capacitance
100
70
50
30
0.3
0.5
3 5
10 30 50
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