@vic
AV
5401
PNP EPITAXIAL SILICON TRANSISTOR
QW-R201-001,A
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
V
CEO
=-150V
*Collector Dissipation:
Pc(max)=625mW
*High current gain
APPLICATIONS
*Telephone Switching Circuit
*Amplifier
TO-92
1
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS
( Ta=25
C ,unless otherwise specified )
PARAMETER SYMBOL
RATING
UNIT
Collector-base voltage
V
CBO
-160 V
Collector-emitter voltage
V
CEO
-150 V
Emitter-base voltage
V
EBO
-5 V
Collector dissipation
Pc
625
mW
Collector current
Ic
-600
mA
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-55 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C,unless otherwise specified)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Collector-base breakdown voltage
BV
CBO
Ic=-100
A,I
E
=0
-160
V
Collector-emitter breakdown voltage
BV
CEO
Ic=-1mA,I
B
=0 -150
V
Emitter-base breakdown voltage
BV
EBO
I
E
=-10
A,Ic=0
-6
V
Collector cut-off current
I
CBO
V
CB
=-120V,I
E
=0
-50
nA
Emitter cut-off current
I
EBO
V
EB
=-3V,Ic=0
-50
nA
DC current gain(note)
hFE1
hFE2
hFE3
V
CE
=-5V,Ic=-1mA
V
CE
=-5V,Ic=-10mA
V
CE
=-5V,Ic=-50mA
80
80
80
400
Collector-emitter saturation voltage
V
CE
(sat) Ic=-10mA,I
B
=-1mA
Ic=-50mA,I
B
=-5mA
-0.2
-0.5
V
Base-emitter saturation voltage
V
BE
(sat) Ic=-10mA,I
B
=-1mA
Ic=-50mA,I
B
=-5mA
-1
-1
V
Current gain bandwidth product
f
T
V
CE
=-10V,Ic=-10mA,f=100MHz
100
400
MHz
QW-R201-001,A
(continued)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Output capacitance
Cob
V
CB
=-10V,I
E
=0
f=1MHz
6.0
pF
Noise Figure
NF
Ic=-0.25mA,V
CE
=-5V
Rs=1k
,f=10Hz to 15.7kHz
8 dB
Note: Pulse test: PW<300
s, Duty Cycle<2%
CLASSIFICATION OF hFE
RANK
A B C
RANGE 80-170 150-240 200-400
TYPICAL PARAMETERS PERFORMANCE
Fig.2 DC current Gain
Ic,Collector current (mA)
H
FE
,
DC c
u
r
r
e
n
t
G
a
i
n
10
2
10
1
10
0
10
3
-10
3
-10
2
-10
1
-10
0
-10
-1
V
CE
=-5V
Fig.3 Base-Emitter on Voltage
Ic
,C
ol
l
e
c
t
or
c
u
r
r
ent (
m
A)
Base-Emitter voltage (V)
0
-0.2
-0.4
-0.6
-0.8
-1.0
V
CE
=-5V
Satur
a
ti
on v
o
l
t
age (
V
)
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.1 Collector output
Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
10
3
C
u
r
r
ent G
a
i
n
-
bandw
i
d
th
pr
oduc
t,f
T
(M
H
z
)
10
0
10
1
10
2
V
CE
=-10V
Collector-Base voltage (V)
C
ob,C
apac
i
t
anc
e (
pF
)
-10
0
0
4
8
12
f=1MHz
I
E
=0
-10
-1
-10
-2
-10
1
-10
2
16
20
-10
1
-10
2
-10
3
-10
0
Ic,Collector current (mA)
-10
3
-10
2
-10
1
-10
0
-10
-1
Ic,Collector current (mA)
-10
3
-10
2
-10
1
-10
0
-10
-1
-10
0
-10
1
@vic
AV
5401
PNP EPITAXIAL SILICON TRANSISTOR
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