@vic
AV
8050S
NPN EPITAXIAL SILICON TRANSISTOR
QW-R206-001,A
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN
TRANSISTOR
DESCRIPTION
The
@vic
AV
8050S is a low voltage high current small signal
NPN transistor, designed for Class B push-pull audio
amplifier and general purpose applications.
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complementary to
@vic AV
8550S
MARKING
SOT-23
1
3
2
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25
C ,unless otherwise specified )
PARAMETER SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
30 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
5 V
Collector Dissipation(Ta=25)
Pc 1 W
Collector Current
Ic
700
mA
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-65 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C,unless otherwise specified)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown Voltage
BV
CBO
Ic=100
A,I
E
=0
30
V
Collector-Emitter Breakdown Voltage
BV
CEO
Ic=1mA,I
B
=0 20
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=100
A,Ic=0
5 V
Collector Cut-Off Current
I
CBO
V
CB
=30V,I
E
=0
1
uA
Emitter Cut-Off Current
I
EBO
V
EB
=5V,Ic=0
100
nA
DC Current Gain(note)
hFE
1
hFE2
hFE3
V
CE
=1V,Ic=1mA
V
CE
=1V,Ic=150 mA
V
CE
=1V,Ic=500mA
100
120
40
110
400
Collector-Emitter Saturation Voltage
V
CE
(sat) Ic=500mA,I
B
=50mA
0.5
V
Base-Emitter Saturation Voltage
V
BE
(sat) Ic=500mA,I
B
=50mA
1.2
V
Base-Emitter Saturation Voltage
V
BE
V
CE
=1V,Ic=10mA
1.0
V
D9
QW-R206-001,A
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Current Gain Bandwidth Product
f
T
V
CE
=10V,Ic=50mA 100
MHz
Output Capacitance
Cob
V
CB
=10V,I
E
=0
f=1MHz
9.0 pF
CLASSIFICATION OF hFE2
RANK C D E
RANGE 120-200 160-300 280-400
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
Ic
,C
ol
l
e
c
t
or
c
u
r
r
ent (
m
A)
0
0.4
0.8
1.2
1.6
2.0
0
0.1
0.2
0.3
0.4
0.5
I
B
=0.5mA
I
B
=1.0mA
I
B
=1.5mA
I
B
=2.0mA
I
B
=2.5mA
I
B
=3.0mA
Fig.2 DC current Gain
Ic,Collector current (mA)
H
FE
,
DC c
u
r
r
e
n
t
G
a
i
n
10
2
10
1
10
0
10
3
10
3
10
2
10
1
10
0
10
-1
V
CE
=1V
Fig.3 Base-Emitter on Voltage
10
-1
10
0
10
1
10
2
Ic
,C
ol
l
e
c
t
or
c
u
r
r
ent (
m
A)
Base-Emitter voltage (V)
0
0.2
0.4
0.6
0.8
1.0
V
CE
=1V
Ic,Collector current (mA)
10
3
10
2
10
1
10
0
10
-1
Satur
a
ti
on v
o
l
t
age (
m
V)
10
1
10
2
10
3
10
4
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
Ic,Collector current (mA)
10
0
10
1
10
2
10
3
C
u
r
r
ent G
a
i
n
-
bandw
i
d
th
pr
oduc
t,f
T
(M
H
z
)
10
0
10
1
10
2
V
CE
=10V
Collector-Base voltage (V)
C
ob,C
apac
i
t
anc
e (
pF
)
10
3
10
3
10
0
10
1
10
2
10
0
10
1
10
2
10
3
f=1MHz
I
E
=0
@vic
AV
8050S
NPN EPITAXIAL SILICON TRANSISTOR
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