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8 5 5 0 S PNP EPITAXIAL SILICON TRANSISTOR
QW-R201-012,A
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP
TRANSISTOR
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complimentary to 8050S
APPLICATIONS
*Class B push-pull audio amplifier
*General purpose applications
TO-92
1
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25
C ,unless otherwise specified )
PARAMETERS SYMBOL
RATING
UNITS
Collector-base voltage
V
CBO
-30 V
Collector-emitter voltage
V
CEO
-20 V
Emitter-base voltage
V
EBO
-5 V
Collector dissipation(Ta=25
C
)
Pc 1
W
Collector current
Ic
-700
mA
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-65 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C,unless otherwise specified)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Collector-base breakdown voltage
BV
CBO
Ic=-100
A,I
E
=0
-30
V
Collector-emitter breakdown voltage
BV
CEO
Ic=-1mA,I
B
=0 -20
V
Emitter-base breakdown voltage
BV
EBO
I
E
=-100
A,Ic=0
-5 V
Collector cut-off current
I
CBO
V
CB
=-30V,I
E
=0
-1
uA
Emitter cut-off current
I
EBO
V
EB
=-5V,Ic=0
-100
nA
DC current gain(note)
hFE
1
hFE2
hFE3
V
CE
=-1V,Ic=-1mA
V
CE
=-1V,Ic=-150 mA
V
CE
=-1V,Ic=-500mA
100
120
40
110
400
Collector-emitter saturation voltage
V
CE
(sat) Ic=-500mA,I
B
=-50mA
-0.5
V
Base-emitter saturation voltage
V
BE
(sat) Ic=500mA,I
B
=-50mA
-1.2
V
Base-emitter saturation voltage
V
BE
V
CE
=-1V,Ic=-10mA
-1.0
V
Current gain bandwidth product
f
T
V
CE
=-10V,Ic=-50mA 100
MHz
Output capacitance
Cob
V
CB
=10V,I
E
=0
f=1MHz
9.0 pF
QW-R201-012,A
CLASSIFICATION OF hFE2
RANK C D E
RANGE 120-200 160-300 280-400
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
Ic
,C
o
l
l
e
c
to
r
c
u
r
r
e
n
t (
m
A
)
0
0.4
0.8
1.2
1.6
2.0
0
0.1
0.2
0.3
0.4
0.5
I
B
=0.5mA
I
B
=1.0mA
I
B
=1.5mA
I
B
=2.0mA
I
B
=2.5mA
I
B
=3.0mA
Fig.2 DC current Gain
Ic,Collector current (mA)
H
FE
, D
C
c
u
r
r
e
n
t Ga
i
n
10
2
10
1
10
0
10
3
10
3
10
2
10
1
10
0
10
-1
V
CE
=1V
Fig.3 Base-Emitter on Voltage
10
-1
10
0
10
1
10
2
Ic
,C
o
l
l
e
c
to
r
c
u
r
r
e
n
t (
m
A
)
Base-Emitter voltage (V)
0
0.2
0.4
0.6
0.8
1.0
V
CE
=1V
Ic,Collector current (mA)
10
3
10
2
10
1
10
0
10
-1
S
at
ur
at
ion v
olt
age (
m
V
)
10
1
10
2
10
3
10
4
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
Ic,Collector current (mA)
10
0
10
1
10
2
10
3
Cur
r
ent
G
ain-
bandwidt
h
pr
oduc
t
,
f
T
(MH
z
)
10
0
10
1
10
2
V
CE
=10V
Collector-Base voltage (V)
Cob,
Capac
it
anc
e (
pF
)
10
3
10
3
10
0
10
1
10
2
10
0
10
1
10
2
10
3
f=1MHz
I
E
=0
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8 5 5 0 S PNP EPITAXIAL SILICON TRANSISTOR
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