1
.
9
0
.
9
5
0
.
9
5
2
.
9
0
.
4
1. 3
2. 4
1
.
0
SOT-23 Plastic-Encapsulate Transistors
MMBT2222ALT1
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM:
0.3 W (Tamb=25
)
Collector current
I
CM:
0.6 A
Collector-base voltage
V
(BR)CBO
: 75 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= 10
A, I
E
=0
75 V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= 10mA, I
B
=0 40 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=10
A, I
C
=0
6 V
Collector cut-off current
I
CBO
V
CB
=70V, I
E
=0
0.1
A
Collector cut-off current
I
CEO
V
CE
=35V, I
B
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 3V, I
C
=0
0.1
A
H
FE(1)
V
CE
=10V, I
C
= 150mA
100
300
DC current gain
H
FE(2)
V
CE
=10V, I
C
= 1mA
50
Collector-emitter saturation voltage
V
CE
(sat) I
C
=500mA, I
B
= 50mA
0.6
V
Base-emitter saturation voltage
V
BE
(sat) I
C
=500mA, I
B
= 50mA
1.2
V
Transition frequency
f
T
V
CE
=20V, I
C
= 20mA
f=
100MHz
300 MHz
DEVICE MARKING:
MMBT2222A = 1P
Unit: mm
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
@vic
Copyright @vic Electronics Corp. Website http://www.avictek.com
MMBT2222ALT1
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