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Электронный компонент: 2N5679

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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS
2N5679 2N5681
2N5680 2N5682
PNP NPN
TO-39 TO-39
These Are High Voltage & High Current, General Purpose Transistors
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
SYMBOL
2N5679
2N5680
UNITS
2N5681
2N5682
Collector -Emitter Voltage
VCEO
100
120
V
Collector -Base Voltage
VCBO
100
120
V
Emitter -Base Voltage
VEBO
4.0
V
Collector Current Continuous
IC
1.0
A
Base Current
IB
0.5
A
Power Dissipation @Ta=25 degC
PD
1.0
W
Derate Above 25deg C
5.7
mW/deg C
Power Dissipation @Tc=25 degC
PD
10
W
Derate Above 25deg C
57
mW/deg C
Operating And Storage Junction
Tj, Tstg
-65 to +200
deg C
Temperature Range
THERMAL RESISTANCE
Junction to Case
Rth(j-c)
17.5
deg C/W
Junction to Ambient
Rth(j-a)
175
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
2N5679
2N5680
UNITS
2N5681
2N5682
Collector -Emitter Voltage
VCEO(sus) IC=10mA,IB=0
>100
>120
V
Collector-Cut off Current
ICBO
VCB=100V, IE=0
<1.0
-
uA
VCB=120V, IE=0
-
<1.0
uA
ICEO
VCE=70V, IB=0
<10
-
uA
VCE=80V, IB=0
-
<10
uA
ICEX
VCE=100V,VEB=1.5V
<1.0
-
uA
VCE=120V,VEB=1.5V
-
<1.0
uA
TC=150 deg C
VCE=100V,VEB=1.5V
<1.0
-
mA
VCE=120V,VEB=1.5V
-
<1.0
mA
Emitter-Cut off Current
IEBO
VEB=4V, IC=0
<1.0
<1.0
uA
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com page: 1
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
2N5679-82
DESCRIPTION
SYMBOL
TEST CONDITION
2N5679
2N5680
UNITS
2N5681
2N5682
DC Current Gain
hFE*
IC=1A,VCE=2V
>5.0
-
IC=250mA,VCE=2V
40-150
40-150
Collector Emitter Saturation Voltage
VCE(Sat)* IC=250mA,IB=25mA
<0.60
<0.60
V
IC=500mA,IB=50mA
<1.0
<1.0
V
IC=1A, IB=200mA
<2,0
<2.0
V
Base Emitter on Voltage
VBE(on)* IC=250mA,VCE=2V
<1.0
<1.0
V
SMALL SIGNAL CHARACTERISTICS
Small Signal Current Gain
hfe
IC=200mA, VCE=1.5V
>20
>20
f=1kHz
Out-Put Capacitance
Cob
VCB=20V, IE=0
<50
<50
pF
f=1MHz
Transistors Frequency
ft
IC=100mA, VCE=10V
>30
>30
MHz
f=10MHz
*Pulse Test: Pulse Width: =300us, Duty Cycle=2%
TO-39 Metal Can Package
TO-39
500 pcs/polybag 540 gm/500 pcs
3" x 7.5" x 7.5"
20.0K
17" x 15" x 13.5"
32.0K
40 kgs
PACKAGE
Net Weight/Qty
Details
STANDARD PACK
INNER CARTON BOX
Qty
OUTER CARTON BOX
Qty
Gr Wt
Size
Size
Packing Detail
2
1
3
P IN C O N FIG U R ATIO N
1. EM ITTE R
2. BA SE
3. C O LLE C TO R
D IM
M IN
M A X
A
ll d
i
m
e
n
s
io
n
s
a
r
e

in
m
m
A
8.50
9.39
B
7.74
8.50
C
6.09
6.60
D
0.40
0.53
E
--
0.88
F
2.41
2.66
G
4.82
5.33
H
0.71
0.86
J
0.73
1.02
K
12.70
--
L
42 D E G
48 D E G
A
B
C
E
K
D
G
L
H
J
F
1
2
3
Continental Device India Limited
Data Sheet
Page 2 of 3
http://www.bocasemi.com page: 2