Continental Device India Limited
Data Sheet
Page 1 of 3
2N6121, 6122, 6123
NPN PLASTIC POWER TRANSISTORS
2N6124, 6125, 6126
PNP PLASTIC POWER TRANSISTORS
Medium Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
6121 6122 6123
6124 6125 6126
Collector-base voltage (open emitter)
V
CBO
max. 45
60
80
V
Collector-emitter voltage (open base)
V
CEO
max. 45
60
80
V
Collector current
I
C
max.
4.0
A
Total power dissipation up to T
C
= 25C
P
tot
max.
40
W
Junction temperature
T
j
max.
150
C
Collector-emitter saturation voltage
I
C
= 1.5 A; I
B
= 0.15 A
V
CEsat
max.
0.6
V
D.C. current gain
I
C
= 1.5 A; V
CE
= 2 V
h
FE
min.
25
25
20
max. 100 100
80
RATINGS (at T
A
=25C unless otherwise specified)
Limiting values
6121 6122 6123
6124 6125 6126
Collector-base voltage (open emitter)
V
CBO
max. 45
60
80
V
Collector-emitter voltage (open base)
V
CEO
max. 45
60
80
V
Emitter-base voltage (open collector)
V
EBO
max.
5.0
V
2N6121, 2N6122, 2N6123
2N6124, 2N6125, 2N6126
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
1 2
3
J
M
G
D
H
A
O
O
K
N
L
F
E
C
DIM
MIN .
MAX.
A
ll
d
i
min
s
io
n
s
in
m
m
.
A
14.42
16.51
B
9.63
10.67
C
3.56
4.83
D
0.90
E
1.15
1.40
F
3.75
3.88
G
2.29
2.79
H
2.54
3.43
J
0.56
K
12.70
14.73
L
2.80
4.07
M
2.03
2.92
N
31.24
O
DEG 7
1
2
3
4
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
http://www.bocasemi.com page: 1
Boca Semiconductor Corp.
BSC
Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current
I
C
max.
4.0
A
Collector current (Peak)
I
CM
max.
7.0
A
Base current
I
B
max.
1.0
A
Total power dissipation up to T
C
= 25C P
tot
max.
40
W
Derate above 25C
max.
320
mW/C
Junction temperature
T
j
max.
150
C
Storage temperature
T
stg
65 to +150
C
THERMAL RESISTANCE
From junction to case
R
th jc
3.12
C/W
CHARACTERISTICS
T
amb
= 25C unless otherwise specified
6121 6122 6123
6124 6125 6126
Collector cutoff current
I
B
= 0; V
CE
= 45 V
I
CEO
max. 1.0
mA
I
B
= 0; V
CE
= 60 V
I
CEO
max.
1.0
mA
I
B
= 0; V
CE
= 80 V
I
CEO
max.
1.0 mA
V
EB(off)
= 1.5 V; V
CE
= 45 V
I
CEX
max. 0.1
mA
V
EB(off)
= 1.5 V; V
CE
= 60 V
I
CEX
max.
0.1
mA
V
EB(off)
= 1.5 V; V
CE
= 85 V
I
CEX
max.
0.1 mA
V
EB(off)
= 1.5 V; V
CE
= 45 V; T
C
= 125C
I
CEX
max. 2.0
mA
V
EB(off)
= 1.5 V; V
CE
= 60 V; T
C
= 125C
I
CEX
max.
2.0 mA
V
EB(off)
= 1.5 V; V
CE
= 80 V; T
C
= 125C
I
CEX
max.
2.0
mA
I
E
= 0; V
CB
= 45 V
I
CBO
max. 0.1
mA
I
E
= 0; V
CB
= 60 V
I
CBO
max.
0.1
mA
I
E
= 0; V
CB
= 80 V
I
CBO
max.
0.1 mA
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
I
EBO
max.
1.0
mA
Breakdown voltages
I
C
= 100 mA; I
B
= 0
V
CEO(sus)
*
min. 45
60
80 V
I
C
= 1 mA; I
E
= 0
V
CBO
min. 45
60
80 V
I
E
= 1 mA; I
C
= 0
V
EBO
min.
5.0
V
Saturation voltages
I
C
= 1.5 A; I
B
= 0.15 A
V
CEsat
*
max.
0.6
V
I
C
= 4 A; I
B
= 1.0 A
V
CEsat
*
max.
1.4
V
Base-emitter on voltage
I
C
= 1.5 A; V
CE
= 2 V
V
BE(on)
*
max.
1.2
V
D.C. current gain
I
C
= 1.5 A; V
CE
= 2 V
h
FE
*
min. 25
25
20
max.100 100
80
I
C
= 4 A; V
CE
= 2 V
h
FE
*
min. 10
10
7.0
Small signal current
I
C
= 0.1 A; V
CE
= 2 V; f = 1.0 KHz
h
fe
min.
25
Transition frequency at f = 1 MHz
I
C
= 1 A; V
CE
= 4 V
f
T
min.
2.5
MHz
* Pulse test: pulse width
300 s; duty cycle
2%.
2N6121, 2N6122, 2N6123
2N6124, 2N6125, 2N6126
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