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Электронный компонент: 2N6489

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Continental Device India Limited
Data Sheet
Page 1 of 3
2N6486, 6487, 6488
NPN PLASTIC POWER TRANSISTORS
2N6489, 6490, 6491
PNP PLASTIC POWER TRANSISTORS
General Purpose Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS
6486 6487 6488
6489 6490 6491
Collector-base voltage (open emitter)
V
CBO
max. 50
70
90
V
Collector-emitter voltage (open base)
V
CEO
max. 40
60
80
V
Collector current
I
C
max.
15
A
Total power dissipation up to T
C
= 25C
P
tot
max.
75
W
Junction temperature
T
j
max.
150
C
Collector-emitter saturation voltage
I
C
= 5 A; I
B
= 0.5 A
V
CEsat
max.
1.3
V
D.C. current gain
I
C
= 5 A; V
CE
= 4 V
h
FE
min.
20
max.
150
RATINGS (at T
A
=25C unless otherwise specified)
Limiting values
6486 6487 6488
6489 6490 6491
Collector-base voltage (open emitter)
V
CBO
max. 50
70
90
V
Collector-emitter voltage (open base)
V
CEO
max. 40
60
80
V
Emitter-base voltage (open collector)
V
EBO
max.
5.0
V
2N6486, 2N6487, 2N6488
2N6489, 2N6490, 2N6491
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
1 2
3
J
M
G
D
H
A
O
O
K
N
L
F
E
C
DIM
MIN .
MAX.
A
ll
d
i
min
s
io
n
s
in
m
m
.
A
14.42
16.51
B
9.63
10.67
C
3.56
4.83
D
0.90
E
1.15
1.40
F
3.75
3.88
G
2.29
2.79
H
2.54
3.43
J
0.56
K
12.70
14.73
L
2.80
4.07
M
2.03
2.92
N
31.24
O
DEG 7
1
2
3
4
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
http://www.bocasemi.com page: 1
Boca Semiconductor Corp.
BSC
Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current
I
C
max.
15
A
Base current
I
B
max.
5.0
A
Total power dissipation up to T
C
= 25C
P
tot
max.
75
W
Derate above 25C
max.
0.6
W/C
Total power dissipation up to T
A
= 25C
P
tot
max.
1.8
W
Derate above 25C
max.
0.014
W/C
Junction temperature
T
j
max.
150
C
Storage temperature
T
stg
65 to +150
C
THERMAL RESISTANCE
From junction to ambient
R
th ja
70
C/W
From junction to case
R
th jc
1.67
C/W
CHARACTERISTICS
T
amb
= 25C unless otherwise specified
6486 6487 6488
6489 6490 6491
Collector cutoff current
I
B
= 0; V
CE
= 20 V
I
CEO
max. 1.0
mA
I
B
= 0; V
CE
= 30 V
I
CEO
max.
1.0
mA
I
B
= 0; V
CE
= 40 V
I
CEO
max.
1.0 mA
V
EB(off)
= 1.5 V; V
CE
= 45 V
I
CEX
max.500
A
V
EB(off)
= 1.5 V; V
CE
= 65 V
I
CEX
max.
500
A
V
EB(off)
= 1.5 V; V
CE
= 85 V
I
CEX
max.
500 A
V
EB(off)
= 1.5 V; V
CE
= 40 V; T
C
=150C I
CEX
max. 5.0
mA
V
EB(off)
= 1.5 V; V
CE
= 60 V; T
C
=150C I
CEX
max.
5.0
mA
V
EB(off)
= 1.5 V; V
CE
= 80 V; T
C
=150C I
CEX
max.
5.0 mA
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
I
EBO
max.
1.0
mA
Breakdown voltages
I
C
= 200 mA; I
B
= 0
V
CEO(sus)
*
min. 40
60
80
V
I
C
= 1 mA; I
E
= 0
V
CBO
min. 50
70
90
V
I
C
= 200 mA; V
BE
= 1.5 V
V
CEX(sus)
*
min. 50
70
90
V
I
E
= 1 mA; I
C
= 0
V
EBO
min.
5.0
V
Saturation voltages
I
C
= 5 A; I
B
= 0.5 A
V
CEsat
*
max.
1.3
V
I
C
= 15 A; I
B
= 5 A
V
CEsat
*
max.
3.5
V
Base-emitter on voltage
I
C
= 5 A; V
CE
= 4 V
V
BE(on)
*
max.
1.3
V
I
C
= 15 A; V
CE
= 4 V
V
BE(on)
*
max.
3.5
V
D.C. current gain
I
C
= 5 A; V
CE
= 4 V
h
FE
*
min.
20
max.
150
I
C
= 15 A; V
CE
= 4 V
h
FE
*
min.
5.0
Transition frequency
I
C
= 1 A; V
CE
= 4 V; f = 1 MHz
f
T(1)
min.
5.0
MHz
Small signal current gain
I
C
= 1.0A; V
CE
= 4V; f = 1.0 KHz
h
fe
min.
25
* Pulse test: pulse width
300 s; duty cycle
2%
(1) f
T
= |h
fe
| f
test
2N6486, 2N6487, 2N6488
2N6489, 2N6490, 2N6491
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