Continental Device India Limited
Data Sheet
Page 1 of 3
TIP120, 121, 122
NPN PLASTIC POWER TRANSISTORS
TIP125, 126, 127
PNP PLASTIC POWER TRANSISTORS
Power Darlingtons for Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
120 121 122
125 126 127
Collector-base voltage (open emitter)
V
CBO
max. 60
80
100
V
Collector-emitter voltage (open base)
V
CEO
max. 60
80
100
V
Collector current
I
C
max.
5.0
A
Total power dissipation up to T
C
= 25C
P
tot
max.
65
W
Junction temperature
T
j
max.
150
C
Collector-emitter saturation voltage
I
C
= 3 A; I
B
= 12 mA
V
CEsat
max.
2.0
V
D.C. current gain
I
C
= 0.5 A; V
CE
= 3 V
h
FE
min.
1.0
RATINGS (at T
A
=25C unless otherwise specified)
120 121 122
125 126 127
Collector-base voltage (open emitter)
V
CBO
max. 60
80
100
V
Collector-emitter voltage (open base)
V
CEO
max. 60
80
100
V
Emitter-base voltage (open collector)
V
EBO
max.
5.0
V
TIP120, TIP121, TIP122
TIP125, TIP126, TIP127
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
1 2
3
J
M
G
D
H
A
O
O
K
N
L
F
E
C
D IM
M IN .
M A X.
A
l
l
di
m
i
ns
i
ons
i
n
m
m
.
A
14.42
16.51
B
9.63
10.67
C
3.56
4.83
D
0.90
E
1.15
1.40
F
3.75
3.88
G
2.29
2.79
H
2.54
3.43
J
0.56
K
12.70
14.73
L
2.80
4.07
M
2.03
2.92
N
31.24
O
D E G 7
1
2
3
4
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
Boca Semiconductor Corp.
http://www.bocasemi.com page: 1
Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current
I
C
max.
5.0
A
Collector current (peak)
I
CM
max.
8
A
Base current
I
B
max.
120
mA
Total power dissipation up to T
C
= 25C P
tot
max.
65
W
Derate above 25C
max
0.52
W/C
Total power dissipation up to T
A
= 25C P
tot
max.
2
W
Derate above 25C
max
0.016
W/C
Junction temperature
T
j
max.
150
C
Storage temperature
T
stg
65 to +150
C
THERMAL RESISTANCE
From junction to ambient
R
th ja
62.5
C/W
From junction to case
R
th jc
1.92
C/W
CHARACTERISTICS
T
amb
= 25C unless otherwise specified
120 121 122
125 126 127
Collector cutoff current
I
E
= 0; V
CB
= 60 V
I
CBO
max. 0.2
mA
I
E
= 0; V
CB
= 80 V
I
CBO
max.
0.2
mA
I
E
= 0; V
CB
= 100 V
I
CBO
max.
0.2 mA
I
B
= 0; V
CE
= 30V
I
CEO
max. 0.5
mA
I
B
= 0; V
CE
= 40V
I
CEO
max.
0.5
mA
I
B
= 0; V
CE
= 50V
I
CEO
max.
0.5 mA
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
I
EBO
max.
2.0
mA
Breakdown voltages
I
C
= 100 mA; I
B
= 0
V
CEO(sus)
*
min.
60
80
100 V
I
C
= 1 mA; I
E
= 0
V
CBO
min.
60
80
100 V
I
E
= 1 mA; I
C
= 0
V
EBO
min.
5.0
V
Saturation voltages
I
C
= 3.0 A; I
B
= 12 mA
V
CEsat
*
max.
2.0
V
I
C
= 5.0 A; I
B
= 20 mA
V
CEsat
*
max.
4.0
V
Base-emitter on voltage
I
C
= 3A; V
CE
= 3V
V
BE(on)
*
max.
2.5
V
D.C. current gain
I
C
= 0.5A; V
CE
= 3V
h
FE
*
min.
1.0
I
C
= 3A; V
CE
= 3V
min.
1.0
Small signal current gain
I
C
= 3A; V
CE
= 4V; f = 1 MHz
|h
fe
|
min.
4.0
Output capacitance at f = 0.1 MHz
I
E
= 0; V
CB
= 10V
PNP
C
o
max.
300
pF
NPN
C
o
max.
200
pF
* Pulse test: pulse width
300 s; duty cycle
2%.
TIP120, TIP121, TIP122
TIP125, TIP126, TIP127
http://www.bocasemi.com page: 2
Boca Semiconductor Corp.
BSC
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