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Электронный компонент: P35-4100

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Data
sheet
www.bookham.com
Thinking RF solutions
MMIC Broadband
Amplifier, 0.05 - 3.5GHz
The P35-4100-000-200 is a high performance monolithic
broadband amplifier designed for use in a wide range of
applications including telecommunications, instrumentation and
electronic warfare. The amplifier has typically 10dB gain over the
frequency range 50MHz to 3.5GHz. The design requires the
connection of a 5V drain supply and a negative gate supply,
these are applied to the RF Output and RF Input respectively
through an external bias network.
The die is fabricated using Bookham Technology's F14 Gallium
Arsenide MESFET MMIC process. It is fully protected using
Silicon Nitride passivation for excellent performance and reliability.
Features
Ultra Broadband
Flat Frequency response with
direct gain control
20dBm output power capability
Input and output matched to 50
www.bookham.com
www.bookham.com
Thinking RF solutions
www.bookham.com
Parameter Conditions
Min
Typ
Max
Units
Small signal gain
1
0.5GHz - 2GHz
-
9.0
-
dB
0.05GHz - 3.5GHz
8.8
10.0
-
dB
Gain Flatness
0.5GHz - 2GHz
-
0.4
-
dB
0.05GHz - 3.5GHz
-
1.0
1.0
dB
Input Return Loss
0.5GHz - 2GHz
-
10.8
-
dB
0.05GHz - 3.5GHz
5.5
7.3
-
dB
Output Return Loss
0.5GHz - 2GHz
-
11.7
-
dB
0.05GHz - 3.5GHz
6.0
7.3
-
dB
Noise figure
0.5GHz - 2GHz
-
4.5
-
dB
0.05GHz - 3.5GHz
-
6.0
7
dB
Output Power at 1dB compression
18
20
-
dBm
Gate Voltage Vg
0
-0.6
-5
V
Drain Voltage Vd
+4.5
+5.0
+6.0
V
Drain Current Id
Vg = 0V
100
135
180
mA
Electrical Performance
Ambient temperature = 22 3 Deg C , Zo = 50 ohms, Vd = 5V, Id = 90mA
Typical Characteristics at 22 C
Notes
1. Automatic Gain Control may be achieved by controlling the magnitude of Vg
Notes
2. Note:- 2 SMA connectors and bondwires are included in the above data.
Absolute maximum Ratings
Max Vds +6.0V
Max Vgs -5.0V
Die operating temperature -55C to 125C
Storage temperature -65C to +150
P35-4100-000-200
Gain
Noise Figure
Output Return Loss (dB)
Input Return Loss (dB)
www.bookham.com
462/SM/00516/200 Issue1/2
Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
Operation
To operate the P35-4100-0, a drain supply of 5V is connected to the RFout
via a suitable bias circuit.Typically a 200nH inductor and 10nF decoupling
capacitor can be used. The amplifier circuit is controlled by the voltage
applied at RF in and should be set to give a drain current of 90mA.The input
voltage required for this is typically -0.6V. It may be applied by a suitable bias
arrangement, similar to that at the output. DC blocking capacitors of 330pF
should be used at both the input and output. The ground pad must be
bonded with minimum inductance to a good DC and RF ground. It is
recommended that the Die is mounted using silver loaded epoxy and wire
bonded with 25 m diameter gold wire using thermal compression bonding.
See application note P35-41AN3 for more details.
Die Outline
Die size: 1.22x1.22mm
Bond pad size: 120 m square
Die thickness: 200 m
Pad Details
Die Bias Connections
Ordering Information
P35-4100-000-200
Pad Function
1
RF IN & Gate voltage
2
RF OUT & Drain voltage
3 GND
MMICS
Bookham Technology plc
Caswell
Towcester
Northamptonshire
NN12 8EQ
UK
Tel: +44 (0) 1327 356 789
Fax: +44 (0) 1327 356 698
rfsales@bookham.com
Important Notice
Bookham Technology has a policy of
continuous improvement. As a result
certain parameters detailed on this flyer
may be subject to change without notice.
If you are interested in a particular product
please request the product specification
sheet, available from any RF sales
representative.
P35-4100-000-200