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Электронный компонент: P35-4101

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Data
sheet
www.bookham.com
Thinking RF solutions
Monolithic Broadband
Amplifier, 0.5 - 3.5GHz
The P35-4101-000-200 is a high performance monolithic
broadband amplifier designed for use in a wide range of
applications including telecommunications, instrumentation and
electronic warfare. The amplifier gives typically 10dB gain over the
frequency range 500MHz to 3.5GHz. The design is self biased
and requires the connection of a single 5V supply to the amplifier
output.
The die is fabricated using Bookham's F14 Gallium Arsenide
MESFET MMIC process. It is fully protected using Silicon Nitride
passivation for excellent performance and reliability.
Features
Broadband
Self Biased. No separate gate
supply required
20dBm output power capability
Input and output matched to 50
www.bookham.com
www.bookham.com
Thinking RF solutions
www.bookham.com
Parameter Conditions
Min
Typ
Max
Units
Small signal gain
1
0.5GHz - 3.5GHz
8.9
10.0
-
dB
Gain Flatness
0.5GHz - 2.0GHz
-
0.2
-
dB
2.0GHz - 3.5GHz
-
0.75
-
dB
Input Return Loss
0.5GHz - 2GHz
10
17
-
dB
2.0GHz - 3.5GHz
6
12
-
dB
Output Return Loss
0.5GHz - 2.0GHz
8
12
-
dB
2.0GHz - 3.5GHz
6
8
-
dB
Noise figure
0.5GHz - 3.5GHz
-
4.5
-
dB
Output Power at 1dB compression
0.5GHz - 3.5GHz
18
19
-
dBm
Drain Voltage Vd
+4.5
+5.0
+6.0
V
Drain Current Id
Vg = 5V
60
90
100
mA
Electrical Performance
Ambient temperature = 22 3 C , Zo = 50 ohms, Vd = 5V, Id = 90mA
Typical RFOW Performance at 22 C
Gain
0
1
2
3
4
5
6
7
8
9
10
11
12
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
Gain (dB)
Noise Figure
0
2
4
6
8
10
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
Noise Figure (dB)
Input Return Loss (dB)
0
5
10
15
20
25
30
35
40
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
Return Loss (dB)
P1dB
0
2
4
6
8
10
12
14
16
18
20
22
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
Output Power (dBm)
Output Return Loss (dB)
0
5
10
15
20
25
30
35
40
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
Return Loss (dB)
Notes
1. Assumes the inclusion of bondwires
P35-4101-000-200
www.bookham.com
462/SM/00517/200 Issue 3
Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
Operation
To operate the P35-4101-000-200, a drain supply of 5V is connected to the
RFout via a suitable bias circuit. Typically a 200nH inductor and 10nF
decoupling capacitor can be used. The amplifier circuit is self biased and the
drain current will be typically 90mA at 5V. DC blocking capacitors of 330pF
should be used at both the input and output. A bondwire inductance of
around 0.3nH to 0.6nH will improve the high frequency return loss at the
input. The ground pad must be bonded with minimum inductance to a good
DC and RF ground. It is recommended that the die is mounted with silver
loaded epoxy and wire bonded to all pads with 25 m diameter gold wire
using thermal compression bonding. See application note P35-41AN3 for
more details.
Die Outline
Pad Details
Die size:
1.22x1.22mm
Bond pad size: 120 m square
Die thickness:
200 m
Absolute maximum Ratings
Max Vds
+6.0V
Die operating temperature -55C to 125C
Storage temperature
-65C to +150
Ordering Information
P35-4101-000-200
MMICS
Bookham Technology plc
Caswell
Towcester
Northamptonshire
NN12 8EQ
UK
Tel: +44 (0) 1327 356 789
Fax: +44 (0) 1327 356 698
rfsales@bookham.com
Important Notice
Bookham Technology has a policy of
continuous improvement. As a result
certain parameters detailed on this flyer
may be subject to change without notice.
If you are interested in a particular product
please request the product specification
sheet, available from any RF sales
representative.
P35-4101-000-200