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Электронный компонент: P35-4110

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Data
sheet
www.bookham.com
Thinking RF solutions
MMIC Broadband
Amplifier, 1 - 6GHz
The P35-4110-000-200 is a high performance monolithic
broadband amplifier designed for use in a wide range of
applications including telecommunications, instrumentation and
electronic warfare. The amplifier gives typically 7.5dB gain over
the frequency range 1GHz to 6GHz. The internal bias networks
are designed to minimise the external component count, and are
arranged to make the amplifiers easily cascadable for
applications requiring more gain.
The die is fabricated using Bookham Technology's F14 Gallium
Arsenide MESFET MMIC process. It is fully protected using
Silicon Nitride passivation for excellent performance and reliability.
Features
Broadband, cascadable gain block
Flat Frequency response with
direct gain control
High output power capability
Input and output matched to 50
www.bookham.com
www.bookham.com
Thinking RF solutions
www.bookham.com
Parameter Condition
Min
Typ
Max
Units
Small signal gain
1
1GHz - 6GHz
6.3
7.5
-
dB
Gain Flatness
1GHz - 6GHz
-
0.2
0.3
dB
Input Return Loss
2
1GHz - 6GHz
8.5
9.5
-
dB
Output Return Loss
2
1GHz - 6GHz
7.3
9.5
-
dB
Noise figure
1GHz - 6GHz
-
4.6
4.9
dB
Output Power at 1dB compression
18
20
-
dBm
Reverse Isolation
15
18
-
dBm
Gate Voltage Vg
Gate Voltage
0
-1.0
-5.0
Volts
Drain Voltage Vg
Drain Voltage
+4.5
+5.0
+5.5
Volts
Drain Current Id
Vg = 0V
100
150
185
mA
Electrical Performance
Ambient temperature = 22 3 Deg C , Zo = 50 ohms, Vd = 5V, Id = 80mA
Notes
1. The small signal gain and Id are both reduced by increasing Vg
2. For optimum low frequency performance, it is recommended that the Vd supply is decoupled using an off chip
capacitor in the range of 430-1000pF.
3. Note:- 2 SMA connectors and bondwires are included in the above data.
Absolute maximum Ratings
Max supply voltage
+6.0V
Max Vgs
-5.0V
Chip operating temperature -55C to 125C
Storage temperature
-65C to +150
Typical Performance at 22 C
P35-4110-000-200
Gain
Noise Figure
Input Return Loss (dB)
Output Return Loss (dB)
www.bookham.com
462/SM/00509/200 Issue 2/1
Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
Operation
To operate the P35-4110-0 a drain supply of 5V is connected to pad 4. The amplifier circuit
is controlled by the voltage applied at pad 2 and should be set to give a drain current of
80mA; the voltage required for this is typically -1V. The small signal gain and Id are both
reduced by increasing the magnitude of Vg. Virtually no current is taken by the Vg supply.
For optimum low frequency performance, it is recommended that the Vd supply is
decoupled using an off chip capacitor in the range of 430-1000pF. It is important that all
three ground pads are bonded with minimum inductance to a good DC and RF ground. The
gate bias Vg will appear at both input and output bond pads to ease bias connections
when cascading die. See application note P35-41-AN5 for more details. The P35-4110 can
be made available in packaged form. It is recommended that the chip is mounted with silver
loaded epoxy and bonding to all pads is with 25m diameter pure gold wire using thermal
compression bonding.
Die Outline
Die size: 1.68 x 2.06mm
Bond pad size: 120m square
Die thickness 200m
Die Bias Connections
Ordering Information
P35-4110-000-200
Pad Function
1 RF
IN
2 Gate
Voltage
Vg
3 GND
4
Drain Voltage Vd
5
GND
6
RF OUT
7
GND
MMICS
Bookham Technology plc
Caswell
Towcester
Northamptonshire
NN12 8EQ
UK
Tel: +44 (0) 1327 356 789
Fax: +44 (0) 1327 356 698
rfsales@bookham.com
Important Notice
Bookham Technology has a policy of
continuous improvement. As a result
certain parameters detailed on this flyer
may be subject to change without notice.
If you are interested in a particular product
please request the product specification
sheet, available from any RF sales
representative.
P35-4110-000-200