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Электронный компонент: P35-4150

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Data
sheet
www.bookham.com
Thinking RF solutions
MMIC Broadband
Amplifier, 2 - 18GHz
The P35-4150-000-200 is a high performance monolithic
broadband amplifier designed for use in a wide range of
applications including telecommunications, instrumentation
and electronic warfare. The amplifier gives typically 5.0dB
gain over the frequency range 2GHz to 18GHz. On chip input
and output blocking capacitors simplify assembly and allow
the amplifiers to be cascaded easily.
The die is fabricated using Bookham Technology's F20
Gallium Arsenide MESFET MMIC process. It is fully
protected using Silicon Nitride passivation for excellent
performance and reliability.
Features
Broadband, cascadable gain
block
AGC control with gate bias
Output power, 15dBm, typical
Gain flatness 0.5dB, typical
On chip DC blocking capacitors
at input and output
Space - qualified version available
www.bookham.com
www.bookham.com
Thinking RF solutions
www.bookham.com
Notes
1. At 50% Idss, which will be in the range 40-80mA.
2. Gain control can be achieved with variation of Vg typically 3dB/volt.
3. Two wires (25 m diameter), maximum length 0.33mm at RF in and RF out.
Parameter Conditions
Min
Typ
Max
Units
Small signal gain
1
2GHz - 18GHz
5.0
6.0
-
dB
Gain Flatness
2GHz - 18GHz
0.5
1.0
dB
Input Return Loss
3
2GHz - 18GHz
9
10
-
dB
Output Return Loss
3
2GHz - 18GHz
9
10
-
dB
Noise figure
2GHz - 18GHz
7.5
8.5
dB
Output Power at 1dB compression
2GHz
17.0
18.0
dBm
18GHz
14.0 15.0
dBm
Reverse Isolation
2GHz
-
28.0
-
dB
18GHz
14.0
-
dB
Drain Voltage Vd
+4.5
+5.0
+5.5
Volts
Gate Voltage Vg
2
For Id = 60mA
0
-0.6
-5
Volts
Electrical Performance
Ambient temperature = 22 3 deg C, Zo = 50 ohms, Vd = 5V, Id = 50% Idss
Absolute Maximum Ratings
Max supply voltage
+6.0V
Max Vgs
-5.0V
Operating temperature
-55 C to 125 C
Storage temperature
-65 C to +150 C
Typical Performance at 22 C
P35-4150-000-200
Gain
Noise Figure
Input Return Loss
Output Return Loss
Operation
To operate the P35-4150-000-200, a drain supply of 5V is connected to pad 3.The
amplifier circuit is controlled by the voltage applied at pad 5 and should be set to give
a drain current of 50% Idss which will be in the range of 40-80mA, typically 60mA. The
voltage required for this is typically -0.6V. Gain control achieved with the variation of Vg
is typically 3dB/volt at 50% Idss. Decoupling capacitors of 470pF are required at the
gate and drain bias inputs. Additional drain decoupling with a 4.7 F capacitor is
recommended. The RF connections should be made with two wires (25 m diam),
Maximum length 0.3mm at RF in and RF out. See application note P35-41AN2 for more
details. It is recommended that the die is mounted with silver loaded epoxy and
bonding to all pads is with 25 m diameter gold wire using thermal compression
bonding. Gain variation with temperature is typically 0.015dB/C
Die Outline
Die size:
2.21 x 2.135mm
Bond pad size:
120 m square
Die thickness:
200 m
Die bias connections
www.bookham.com
4622/SM/00593/200 Issue 2/1
Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
MMICS
Bookham Technology plc
Caswell
Towcester
Northamptonshire
NN12 8EQ
UK
Tel: +44 (0) 1327 356 789
Fax: +44 (0) 1327 356 698
rfsales@bookham.com
Important Notice
Bookham Technology has a policy of
continuous improvement. As a result
certain parameters detailed on this flyer
may be subject to change without notice.
If you are interested in a particular product
please request the product specification
sheet, available from any RF sales
representative.
P35-4150-000-200
Pad Details
Pad
Function
1 RF
IN
2 RF
OUT
3 Drain
Voltage
Vd
4 N/C
5 Gate
Voltage
Vg
Ordering Information
P35-4150-000-200