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Электронный компонент: P35-4211-000-200

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Data
sheet
www.bookham.com
Thinking RF solutions
MMIC SPDT Reflective
Switch, DC - 3GHz
The P35-4211-000-200 is a high performance Gallium
Arsenide monolithic single pole double throw RF switch,
suitable for use in broadband communications and
instrumentation applications. An open circuit reflective
termination is presented at the isolated output of the switch.
Control is effected by the application of complimentary 0V
and -5V levels to the control lines in accordance with the
truth table below.
This die is fabricated using Bookham Technology's 0.5 m
gate length MESFET process (S20) and is fully protected
using Silicon Nitride passivation for excellent performance
and reliability. This device is also available in a plastic
surface mount package (see P35-4211-1).
Features
Broadband performance
Low insertion loss; 0.5dB typ
at 1GHz
Ultra low DC power consumption
Fast switching speed; 3ns typical
Chip form
www.bookham.com
www.bookham.com
Thinking RF solutions
www.bookham.com
Electrical Performance
Ambient temperature = 22 3 deg C , Zo = 50 ohms, Control voltages = 0V/-5V unless otherwise stated.
P35-4211-00-200
Parameter Conditions
Min
Typ
Max
Units
Insertion Loss
DC - 1GHz
-
0.5
0.6
dB
1 - 3GHz
-
0.9
1.0
dB
Isolation
DC - 1GHz
25
26
-
dB
1 - 3GHz
15
18
-
dB
Input Return Loss
1
DC - 1GHz
18
20
-
dB
1 - 3GHz
15
19
-
dB
Output Return Loss
1
DC - 1GHz
18
20
-
dB
1 - 3GHz
15
19
-
dB
1dB power compression point
2
0/-5V Control; 50MHz
19
20
-
dBm
0/-5V Control; 1GHz
28
29
-
dBm
0/-8V Control; 50MHz
21
22
-
dBm
0/-8V Control; 1GHz
30
31
-
dBm
Switching Speed
50% Control to 10%90%RF
-
3
8
ns
Third Order Intercept
3
500MHz - 47 - dBm
-
47
-
dBm
Notes
1. Return Loss measured in low loss switch state
2. Input power at which insertion loss compresses by 1dB
3. Input power 10dBm/tone
Typical Performance at 22 C
Insertion Loss
Isolation
Input Return Loss
Output Return Loss
Absolute Maximum Ratings
Max control voltage
-8V
Max I/P power
+33 dBm
Operating temperature
-55 C to +125 C
Storage temperature
-65 C to +150 C
Chip Outline
Electrical Schematic
Switching Truth Table
Ordering Information
P35-4211-000-200
www.bookham.com
462/SM/00029/200 Issue 2/2
Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
MMICS
Bookham Technology plc
Caswell
Towcester
Northamptonshire
NN12 8EQ
UK
Tel: +44 (0) 1327 356 789
Fax: +44 (0) 1327 356 698
rfsales@bookham.com
Important Notice
Bookham Technology has a policy of
continuous improvement. As a result
certain parameters detailed on this flyer
may be subject to change without notice.
If you are interested in a particular product
please request the product specification
sheet, available from any RF sales
representative.
P35-4211-000-200
Die size
0.51 x 0.56mm
Bond pad size 90 m x 90 m
Die thickness: 210 m
A
B
RF IN-RF1 RF IN-RF 2
0V -5V Low
loss Isolated
-5V 0V Isolated Low
loss