Data
sheet
www.bookham.com
Thinking RF solutions
MMIC SPDT Reflective
Switch, DC - 6GHz
The P35-4232-000-200 is a high power Gallium Arsenide
single pole double throw broadband RF switch MMIC. It is
suitable for use in broadband communications and
instrumentation applications. A high impedance reflective
termination is presented at the isolated output of the switch.
Control is effected by the application of complimentary 0V/-
5V or 0/-8V signals to the control lines in accordance with
the truth table. Alternatively, positive control voltages may
be used if the Vref terminal is connected to the positive
supply and decoupled to a good RF ground. In this case DC
blocking capacitors should be used in series with the input
and output RF connections.
This die is fabricated using Bookham Technology's 0.5 m
gate length MESFET process (S20) and is fully
protected using Silicon Nitride passivation for excellent
performance and reliability. This device is also
available packaged in a low-cost plastic package or higher
performance ceramic package.
Features
Broadband performance
Low insertion loss; 1.0dB typ
at 3GHz
Ultra low DC power consumption
Fast switching speed; 3ns typical
Positive or negative voltage
operation
High compression point;
34dBm typ.
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www.bookham.com
Thinking RF solutions
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Electrical Performance
Ambient temperature = 22 3 C , Zo = 50
, Control voltages = 0V/-5V unless otherwise stated
P35-4232-000-200
Parameter Conditions
Min
Typ
Max
Units
Insertion Loss
DC - 3GHz
-
1.0
1.2
dB
3 - 6GHz
-
2.0
2.5
dB
Isolation
DC - 3GHz
20
22
-
dB
3 - 6GHz
17
20
-
dB
Input Return Loss
1
DC - 3GHz
15
18
-
dB
3 - 6GHz
10
12
-
dB
Output Return Loss
1
DC - 3GHz
15
16
-
dB
3 - 6GHz
10
15
-
dB
1dB power compression point
2
0/-5V Control; 2GHz
-
34
-
dBm
0/-8V Control; 2GHz
-
35
-
dBm
Switching Speed
50% Control to 10%90%RF
-
3
-
ns
Notes
1. Return Loss measured in low loss switch state.
2. Input power at which insertion loss compresses by 1dB
Typical Performance at 22 C
Insertion Loss
Isolation
Input Return Loss
Output Return Loss
Absolute Maximum Ratings
Max Vref voltage
+8V
Max control voltage
Vref - 8V
Max I/P power
+33 dBm
Operating temperature
-60 C to +125 C
Storage temperature
-65 C to +150 C
Chip Outline
Electrical Schematic
Pin Description
Pad Function
1 RF
IN
2 Control
B
3 RF2
4 Vref
5 RF1
6 Control
A
Chip Handling, Mounting and Bonding
The back of the chip is gold metallized and can be die-attached manually onto gold,
eutectically with Au-Sn (80:20) or with low temperature conductive epoxy. The
maximum allowable chip temperature is 310 C for 2 minutes. Bonds should be made
onto the exposed gold pads with 17 or 25 microns pure gold, half-hard gold wire.
Bonding should be achieved with the chip face at 225 C to 275 C with a
heated thermosonic wedge (approx. 125 C) and a maximum force of 60 grams. Ball
bonds may be used but care must be taken to ensure the ball size is compatible with
the bonding pads shown. The length of the bond wires should be minimised to
reduce parasitic inductance, particularly those to the RF and ground pads.
Ordering Information
P35-4232-000-200
www.bookham.com
462/SM/01746/200 Issue 1/2
Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
MMICS
Bookham Technology plc
Caswell
Towcester
Northamptonshire
NN12 8EQ
UK
Tel: +44 (0) 1327 356 789
Fax: +44 (0) 1327 356 698
rfsales@bookham.com
Important Notice
Bookham Technology has a policy of
continuous improvement. As a result
certain parameters detailed on this flyer
may be subject to change without notice.
If you are interested in a particular product
please request the product specification
sheet, available from any RF sales
representative.
P35-4232-000-200
Chip size
1.07 x 0.61mm
Bond pad size
100 m x 100 m
Chip thickness: 210 m
Switching Diagram (Vref = 0V)
A
B
RF IN-RF1
RF IN-RF 2
0V -5V Low
loss
Isolated
-5V 0V Isolated Low
Loss
Switching Diagram (Vref = 5V)
A B RFIN-RF1
RFIN-RF2
5V 0V Low
loss
Isolated
0V 5V Isolated Low
Loss
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