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Электронный компонент: P35-5122-000-200

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Data
sheet
www.bookham.com
Thinking RF solutions
HEMT Driver Amplifier
8.5 10.5GHz
The P35-5122-000-200 is a high performance 8.5-
10.5GHz Gallium Arsenide driver amplifier. This product is
intended for use in instrumentation, communications &
electronic warfare applications.
The die is fabricated using Bookham Technology's 0.20
m
gate length, pHEMT process and is fully protected using
Silicon Nitride passivation for excellent performance and
reliability.
Features
26dBm Output Power @6V
18dB Typical Gain
Small 2.49 x 1.4mm Die Size
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Parameter Conditions
Min
Typ
Max
Units
Small Signal Gain
8.5 10.5GHz
-
18
-
dB
Input Return Loss
8.5 10.5GHz
-
15
-
dB
Output Return Loss
8.5 10.5GHz
-
15
-
dB
Output Power at
8.5 10.5GHz
-
-
-
-
1dB gain compression
8.5 10.5GHz
-
25
-
dBm
Max (PAE)
8.5 10.5GHz
-
20
-
%
Total circuit current
-
270
-
mA
Gate Voltage; Vg1, Vg2
-
-0.4
-
V
Electrical Performance
Ambient Temperature 223 C, Zo = 50
, Vd1 & Vd2 = 5V, Vg1 Set for Id1=100mA, Vg2 Set for Id2 = 170mA
Output Return Loss
0
5
10
15
20
25
8.0
8.5
9.0
9.5
10.0
10.5
11.0
Frequency (GHz)
Return Loss (dB)
P35-5122-000-200
Typical RFOW Performance (---- With Bondwires)
Input Return Loss
0
5
10
15
20
25
8.0
8.5
9.0
9.5
10.0
10.5
11.0
Frequency (GHz)
Return Loss (dB)
Pout vs Pin (5v)
8
10
12
14
16
18
20
22
24
26
28
-6
-4
-2
0
2
4
6
8
Pin (dBm)
Pout (dBm)
8 GHz
9 GHz
10 GHz
Output Power @ 1dB compression
(5v)
20
21
22
23
24
25
26
27
28
8.0
8.5
9.0
9.5
10.0
10.5
11.0
Frequncy (GHz)
Pout (dBm)
Gain
0
2
4
6
8
10
12
14
16
18
20
8.0
8.5
9.0
9.5
10.0
10.5
11.0
Frequency (GHz)
Gain (dB)
Reverse Isolation
0
20
40
60
8.0
8.5
9.0
9.5
10.0
10.5
11.0
Frequency (GHz)
Isolation (dB)
Notes
1. All parameters measured on wafer
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P35-5122-000-200
Typical RFOW Performance
Gain vs Pin (5V)
14
15
16
17
18
19
20
-6
-4
-2
0
2
4
6
8
Pin (dBm)
Gain (dB)
8 GHz
9 GHz
10 GHz
Current vs Pin (5V)
200
225
250
275
300
325
350
375
400
425
450
-6
-4
-2
0
2
4
6
8
Pin (dBm)
Current Ids (mA)
8 GHz
9 GHz
10 GHz
PAE vs Pin(5V)
0
5
10
15
20
25
-6
-4
-2
0
2
4
6
8
Pin (dBm)
PAE (%)
8GHz
9 GHz
10 GHz
Output Power @ 1dB compression
(6v)
20
21
22
23
24
25
26
27
28
8.0
8.5
9.0
9.5
10.0
10.5
11.0
Frequncy (GHz)
Pout (dBm)
Pout vs Pin (6v)
8
10
12
14
16
18
20
22
24
26
28
-6
-4
-2
0
2
4
Pin (dBm)
Pout (dBm)
8 GHz
9 GHz
10 GHz
Gain vs Pin (6V)
14
15
16
17
18
19
20
-6
-4
-2
0
2
4
6
8
Pin (dBm)
Gain (dB)
8 GHz
9 GHz
10 GHz
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Chip Outline
Typical S-parameters (RFOW)
P35-5122-000-200
Current vs Pin (6V)
200
225
250
275
300
325
350
375
400
425
450
-6
-4
-2
0
2
4
6
8
Pin (dBm)
Current Ids (mA)
8 GHz
9 GHz
10 GHz
PAE vs Pin(6V)
0
5
10
15
20
25
-6
-4
-2
0
2
4
6
8
Pin (dBm)
PAE (%)
8GHz
9 GHz
10 GHz
Frequency S11
S21
S12
S22
(GHz)
Mag
Angle
Mag
Angle
Mag
Angle
Mag
Angle
8.5
0.29
149.3
8.32
83.3
0.0029
-132.2
0.29
163.3
8.75
0.23
133.1
8.54
65.3
0.0031
-146.6
0.26
163
9
0.16
110.8
8.71
46.6
0.0032
-162.6
0.23
162.1
9.25
0.11
73.3
8.82
27.1
0.0034
-178.5
0.20
160.9
9.5
0.10
15.9
8.82
6.7
0.0035
164.8
0.17
157.4
9.75
0.15
-26
8.70
-14.6
0.0037
146.6
0.14
152.1
10
0.21
-51.3
8.41
-36.8
0.0036
127.3
0.10
140.5
10.25
0.27
-69.2
7.92
-59.9
0.0036
108
0.05
112.7
10.5
0.33
-83.1
7.25
-83.7
0.0035
87.4
0.05
28.1
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Handling and Assembly Information
Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Dice are supplied in
antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static
workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp
tweezers.
GaAs Products from Bookham Technology's pHEMT Foundry process are 100m thick and have through GaAs
vias to enable grounding to the circuit. Windows in the surface passivation above the bond pads are provided to
allow wire bonding to the die.
The surface to which the die are to be attached should be cleaned with a proprietary de-greasing cleaner.
Eutectic mounting should be used and entails the use of a gold-tin (AuSn) preform, approximately 0.001" thick,
placed between the die and the attachment surface. The preferred method of mounting is the use of a machine
such as a Mullins 8-140 die bonder. This utilises a heated collet and workstation with a facility for applying a
scrubbing action to ensure total wetting and avoid the formation of voids. Dry nitrogen gas is directed across the
work piece.
The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280C (Note: Gold Germanium with
a higher melting temperature should be avoided, in particular for MMICs). The work station temperature should
be 310C 10C. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. The
strength of the bonding formed by this method will result in fracture of the die, rather than the bond under die
strength testing.
The P35-5122-000-200 amplifier die has gold bond pads. The recommended wire bonding procedure uses 25m
(0.001") 99.99% pure gold wire with 0.5-2% elongation. Thermo-compression wedge bonding is preferred though
thermosonic wire bonding may be used providing the ultrasonic content of the bond is minimised. A work station
temperature of 260C 10C with a wedge tip temperature of 120C 10C is recommended. The wedge force
should be 45 5 grams. Bonds should be made from the bond pads on the die to the package or substrate.
The RF bond pads at the input and output are 120m x 80m; all other bond pads are 120m x 120m.
The P35-5122-000-200 has been designed to include the inductance of two 25m bond wires at both the input
and output, facilitating the integration of the die into a 50
environment, these should be kept to a minimum
length.
Operating and Biasing of the P35-5122-000-200
The P35-5122-000-200 is a two-stage low noise amplifier. The drain biases for both stages (Vd1 & Vd2) are
accessible and should be set to 5 volts. The gate voltages (Vg1 & Vg2) are set to give 100mA of drain current in
the first stage and 170mA in the second stage drain. The separate drain and gate voltage supplies for both stages
can be combined into single supplies (Vdd & Vgg). As with most GaAs devices gate voltages should be applied
before connecting the drain supply. DC bias supplies should be decoupled to ground using 100pF chip capacitors
placed close to the chip with short bondwires to the amplifier bond pads.
P35-5122-000-200
Pad Details
Die size:
2.49 x 1.4mm
RF bond pads (1 & 8):
120m x 80m
All other bond pads:
120m x 120m
Die Thickness:
100m
Pad
Function
1
RF Input
2
N/C
3
N/C
4
Vg1
5
Vd1
6
Vg2
7
Vd2
8
RF Output
Typical bonding detail
Absolute maximum Ratings
Max Vdd
+7V
Max Vgg
-2V
Max channel temperature 150C
Storage temperature
-65C to +150C
Ordering Information
P35-5122-000-200
www.bookham.com
462/SM/02348/200 Issue 2
Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
MMICS
Bookham Technology plc
Caswell
Towcester
Northamptonshire
NN12 8EQ
UK
Tel: +44 (0) 1327 356 789
Fax: +44 (0) 1327 356 698
rfsales@bookham.com
Important Notice
Bookham Technology has a policy of
continuous improvement. As a result
certain parameters detailed on this flyer
may be subject to change without notice.
If you are interested in a particular product
please request the product specification
sheet, available from any RF sales
representative.
P35-5122-000-200