Data
sheet
www.bookham.com
HEMT MMIC X-Band
Driver Amplifier
8.5 10.5GHz
The P35-5129-000-200 is a two stage, high performance
8.5 10.5 GHz Gallium Arsenide monolithic medium power
amplifier. The amplifier is especially suited for use as a driver
amplifier in instrumentation, communications and electronic
warfare systems. The circuit is DC blocked at the RF input
and output
The die is fabricated using Bookham's pHEMT process and
is fully protected using Silicon Nitride passivation for
excellent performance and reliability.
Features
1W Output Power (1dB Gain Compression)
20 dB Gain Typical
pHEMT technology
Electrical Performance
Ambient temperature = 223 C, Zo = 50
, Vdrain1 = +5V, Vdrain2 = +6V, Vgate1 & 2 = -0.35V (Id = 50% Idss)
Chip Size: 3.25 x 2.3 x 0.1mm
Ordering Information
P35-5129-000-200
www.bookham.com
462/SM/XXXXX/200 Issue Draft
Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
MMICS
Bookham Technology plc
Caswell
Towcester
Northamptonshire
NN12 8EQ
UK
Tel: +44 (0) 1327 356 789
Fax: +44 (0) 1327 356 698
rfsales@bookham.com
Important Notice
Bookham Technology has a policy of
continuous improvement. As a result
certain parameters detailed on this flyer
may be subject to change without notice.
If you are interested in a particular product
please request the product specification
sheet, available from any RF sales
representative.
Parameter Conditions
Min
Typ
Max
Units
Small Signal Gain
8.5GHz 10.5GHz
-
20
-
dB
Input Return Loss
8.5GHz 10.5GHz
-
15
-
dB
P-1dB Output Power
8.5GHz 10.5GHz
30
-
-
dBm
Max PAE
8.5GHz 10.5GHz
-
30
-
%
Total circuit current
-
550
-
mA
Engineering Datasheet
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