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Электронный компонент: P35-5143-000-200

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Data
sheet
www.bookham.com
HEMT MMIC
Broadband Medium
Power Amplifier,
2 - 20GHz
The P35-5143-000-200 is a high performance 2 - 20GHz
Gallium Arsenide monolithic travelling wave broadband
medium power amplifier. The broadband amplifier is
especially suited for use as a gain block driver amplifier in
electronic warfare, instrumentation or communications
systems. The circuit is DC blocked at the RF input and
output.
The die is fabricated using Bookham's pHEMT process and
is fully protected using Silicon Nitride passivation for
excellent performance and reliability.
Features
10 dB Gain Typical
pHEMT technology
Electrical Performance
Ambient temperature = 223C, Zo = 50
, Vdrain = +7V, Vgate = -0.4V (Id = 50% Idss)
Chip size:
2.35 x 1.71mm
Bond pad size:
120m square
Chip thickness:
100m
Ordering Information
P35-5143-000-200
www.bookham.com
462/SM/03287/200 Issue Draft
Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
Parameter Conditions
Min
Typ
Max
Units
Small Signal Gain
2GHz - 20GHz
-
10
-
dB
Gain Ripple
2GHz - 20GHz
-
0.4
-
dB
Input Return Loss
2GHz - 20GHz
-
10
-
dB
Output Return Loss
2GHz - 20GHz
-
10
-
dB
P-1dB Output Power
2GHz - 20GHz
-
23
-
dBm
Bias supply current (Ids)
Vdrain =7V Vgate=50%Idss
-
160
-
mA
MMICS
Bookham Technology plc
Caswell
Towcester
Northamptonshire
NN12 8EQ
UK
Tel: +44 (0) 1327 356 789
Fax: +44 (0) 1327 356 698
rfsales@bookham.com
Important Notice
Bookham Technology has a policy of
continuous improvement. As a result
certain parameters detailed on this flyer
may be subject to change without notice.
If you are interested in a particular product
please request the product specification
sheet, available from any RF sales
representative.
Engineering Datasheet