BD244, BD244A, BD244B, BD244C
PNP SILICON POWER TRANSISTORS
P R O D U C T
I N F O R M A T I O N
1
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with the
BD243 Series
65 W at 25C Case Temperature
6 A Continuous Collector Current
10 A Peak Collector Current
Customer-Specified Selections Available
absolute maximum ratings at 25C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
0.3 ms, duty cycle 10%.
2. Derate linearly to 150C case temperature at the rate of 0.52 W/C.
3. Derate linearly to 150C free air temperature at the rate of 16 mW/C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -0.4 A, R
BE
= 100
,
V
BE(off)
= 0, R
S
= 0.1
, V
CC
= -20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (R
BE
= 100
)
BD244
BD244A
BD244B
BD244C
V
CER
-55
-70
-90
-115
V
Collector-emitter voltage (I
C
= -30 mA)
BD244
BD244A
BD244B
BD244C
V
CEO
-45
-60
-80
-100
V
Emitter-base voltage
V
EBO
-5
V
Continuous collector current
I
C
-6
A
Peak collector current (see Note 1)
I
CM
-10
A
Continuous base current
I
B
-3
A
Continuous device dissipation at (or below) 25C case temperature (see Note 2)
P
tot
65
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 3)
P
tot
2
W
Unclamped inductive load energy (see Note 4)
LI
C
2
62.5
mJ
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Lead temperature 3.2 mm from case for 10 seconds
T
L
250
C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
BD244, BD244A, BD244B, BD244C
PNP SILICON POWER TRANSISTORS
2
P R O D U C T
I N F O R M A T I O N
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -30 mA
(see Note 5)
I
B
= 0
BD244
BD244A
BD244B
BD244C
-45
-60
-80
-100
V
I
CES
Collector-emitter
cut-off current
V
CE
= -55 V
V
CE
= -70 V
V
CE
= -90 V
V
CE
= -115 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
BD244
BD244A
BD244B
BD244C
-0.4
-0.4
-0.4
-0.4
mA
I
CEO
Collector cut-off
current
V
CE
= -30 V
V
CE
= -60 V
I
B
= 0
I
B
= 0
BD244/244A
BD244B/244C
-0.7
-0.7
mA
I
EBO
Emitter cut-off
current
V
EB
= -5 V
I
C
= 0
-1
mA
h
FE
Forward current
transfer ratio
V
CE
= -4 V
V
CE
= -4 V
I
C
= -0.3 A
I
C
= -3 A
(see Notes 5 and 6)
30
15
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= -1 A
I
C
= -6 A
(see Notes 5 and 6)
-1.5
V
V
BE
Base-emitter
voltage
V
CE
= -4 V
I
C
= -6 A
(see Notes 5 and 6)
-2
V
h
fe
Small signal forward
current transfer ratio
V
CE
= -10 V
I
C
= -0.5 A
f = 1 kHz
20
|
h
fe
|
Small signal forward
current transfer ratio
V
CE
= -10 V
I
C
= -0.5 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
1.92
C/W
R
JA
Junction to free air thermal resistance
62.5
C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
Turn-on time
I
C
= -1 A
V
BE(off)
= 3.7 V
I
B(on)
= -0.1 A
R
L
= 20
I
B(off)
= 0.1 A
t
p
= 20 s, dc
2%
0.3
s
t
off
Turn-off time
1
s
BD244, BD244A, BD244B, BD244C
PNP SILICON POWER TRANSISTORS
3
P R O D U C T
I N F O R M A T I O N
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-01
-10
-10
h
FE
-
D
C
C
u
rre
n
t
Ga
i
n
10
10
100
1000
TCS634AH
V
CE
= -4 V
T
C
= 25C
t
p
= 300 s, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
I
B
- Base Current - A
-0001
-001
-01
-10
-10
V
C
E
(
sat
)
- Co
l
l
e
c
to
r-Em
i
tte
r Sa
tu
ra
ti
o
n
Vo
l
t
a
g
e
- V
-001
-01
-10
-10
TCS634AE
I
C
= -300 mA
I
C
= -1 A
I
C
= -3 A
I
C
= -6 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-01
-10
-10
V
BE
-
B
a
se-
E
m
i
t
t
e
r
V
o
l
t
ag
e
-
V
-06
-07
-08
-09
-10
-11
-12
TCS634AF
V
CE
= -4 V
T
C
= 25C
BD244, BD244A, BD244B, BD244C
PNP SILICON POWER TRANSISTORS
4
P R O D U C T
I N F O R M A T I O N
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
-10
-10
-100
-1000
I
C
- Co
l
l
e
c
to
r Cu
rr
e
n
t - A
-001
-01
-10
-10
-100
SAS634AD
BD244
BD244A
BD244B
BD244C
t
p
= 300 s, d = 0.1 = 10%
t
p
= 1 ms, d = 0.1 = 10%
t
p
= 10 ms, d = 0.1 = 10%
DC Operation
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
to
t
-
Ma
xi
mu
m
P
o
w
e
r
D
i
s
s
i
p
at
i
o
n
-
W
0
10
20
30
40
50
60
70
80
TIS633AB
BD244, BD244A, BD244B, BD244C
PNP SILICON POWER TRANSISTORS
5
P R O D U C T
I N F O R M A T I O N
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
1,23
1,32
4,20
4,70
1
2
3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2
VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version
1,
18.0
mm.
Version
2,
17.6
mm.
MDXXBE
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