BD895, BD897, BD899, BD901
NPN SILICON POWER DARLINGTONS
P R O D U C T
I N F O R M A T I O N
1
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with
BD896, BD898, BD900 and BD902
70 W at 25C Case Temperature
8 A Continuous Collector Current
Minimum h
FE
of 750 at 3V, 3A
absolute maximum ratings at 25C case temperature (unless otherwise noted)
NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.56 W/C.
2. Derate linearly to 150C free air temperature at the rate of 16 mW/C.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BD895
BD897
BD899
BD901
V
CBO
45
60
80
100
V
Collector-emitter voltage (I
B
= 0)
BD895
BD897
BD899
BD901
V
CEO
45
60
80
100
V
Base-emitter voltage
V
EBO
5
V
Continuous collector current
I
C
8
A
Continuous base current
I
B
0.3
A
Continuous device dissipation at (or below) 25C case temperature (see Note 1)
P
tot
70
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 2)
P
tot
2
W
Operating free-air temperature range
T
A
-65 to +150
C
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
BD895, BD897, BD899, BD901
NPN SILICON POWER DARLINGTONS
2
P R O D U C T
I N F O R M A T I O N
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 100 mA
I
B
= 0
(see Note 3)
BD895
BD897
BD899
BD901
45
60
80
100
V
I
CEO
Collector-emitter
cut-off current
V
CE
= 30 V
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
BD895
BD897
BD899
BD901
0.5
0.5
0.5
0.5
mA
I
CBO
Collector cut-off
current
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
T
C
= 100C
T
C
= 100C
T
C
= 100C
T
C
= 100C
BD895
BD897
BD899
BD901
BD895
BD897
BD899
BD901
0.2
0.2
0.2
0.2
2
2
2
2
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V
I
C
= 0
(see Notes 3 and 4)
2
mA
h
FE
Forward current
transfer ratio
V
CE
= 3 V
I
C
= 3 A
(see Notes 3 and 4)
750
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 12 mA
I
C
= 3 A
(see Notes 3 and 4)
2.5
V
V
BE(on)
Base-emitter
voltage
V
CE
= 3 V
I
C
= 3 A
(see Notes 3 and 4)
2.5
V
V
F
Parallel diode
forward voltage
I
F
= 8 A
3.5
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
1.79
C/W
R
JA
Junction to free air thermal resistance
62.5
C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
Turn-on time
I
C
= 3 A
V
BE(off)
= -3.5 V
I
B(on)
= 12 mA
R
L
= 10
I
B(off)
= -12 mA
t
p
= 20
s, dc 2%
1
s
t
off
Turn-off time
5
s
BD895, BD897, BD899, BD901
NPN SILICON POWER DARLINGTONS
3
P R O D U C T
I N F O R M A T I O N
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
10
10
h
FE
-
T
y
pi
c
a
l
D
C
Cu
r
r
e
n
t
G
a
in
50000
100
1000
10000
TCS130AD
T
C
= -40C
T
C
= 25C
T
C
= 100C
V
CE
= 3 V
t
p
= 300 s, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
10
10
V
C
E
(
sat
)
- Co
l
l
e
c
to
r-Em
i
tte
r Sa
tu
ra
ti
o
n
Vo
l
t
a
g
e
- V
05
10
15
20
TCS130AB
T
C
= -40C
T
C
= 25C
T
C
= 100C
t
p
= 300 s, duty cycle < 2%
I
B
= I
C
/ 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
10
10
V
B
E
(
sat
)
- Ba
s
e
-E
m
i
tte
r Sa
tu
ra
ti
o
n
Vo
l
t
a
g
e
- V
05
10
15
20
25
30
TCS130AC
T
C
= -40C
T
C
= 25C
T
C
= 100C
I
B
= I
C
/ 100
t
p
= 300 s, duty cycle < 2%
BD895, BD897, BD899, BD901
NPN SILICON POWER DARLINGTONS
4
P R O D U C T
I N F O R M A T I O N
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
10
10
100
1000
I
C
- Co
l
l
e
c
to
r Cu
rre
n
t
- A
0.01
01
10
10
SAS130AD
BD895
BD897
BD899
BD901
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
to
t
-
Ma
xi
mu
m
P
o
w
e
r
D
i
s
s
i
p
at
i
o
n
-
W
0
10
20
30
40
50
60
70
80
TIS130AB
BD895, BD897, BD899, BD901
NPN SILICON POWER DARLINGTONS
5
P R O D U C T
I N F O R M A T I O N
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
1,23
1,32
4,20
4,70
1
2
3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2
VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version
1,
18.0
mm.
Version
2,
17.6
mm.
MDXXBE
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