BDW94, BDW94A, BDW94B, BDW94C
PNP SILICON POWER DARLINGTONS
P R O D U C T
I N F O R M A T I O N
1
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with
BDW93, BDW93A, BDW93B and BDW93C
80 W at 25C Case Temperature
12 A Continuous Collector Current
Minimum h
FE
of 750 at 3 V, 5 A
absolute maximum ratings at 25C case temperature (unless otherwise noted)
NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.64 W/C.
2. Derate linearly to 150C free air temperature at the rate of 16 mW/C.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BDW94
BDW94A
BDW94B
BDW94C
V
CBO
-45
-60
-80
-100
V
Collector-emitter voltage (I
B
= 0)
BDW94
BDW94A
BDW94B
BDW94C
V
CEO
-45
-60
-80
-100
V
Emitter-base voltage
V
EBO
-5
V
Continuous collector current
I
C
-12
A
Continuous base current
I
B
-0.3
A
Continuous device dissipation at (or below) 25C case temperature (see Note 1)
P
tot
80
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 2)
P
tot
2
W
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Operating free-air temperature range
T
A
-65 to +150
C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
BDW94, BDW94A, BDW94B, BDW94C
PNP SILICON POWER DARLINGTONS
2
P R O D U C T
I N F O R M A T I O N
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -100 mA
I
B
= 0
(see Note 3)
BDW94
BDW94A
BDW94B
BDW94C
-45
-60
-80
-100
V
I
CEO
Collector-emitter
cut-off current
V
CB
= -40 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -80 V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
BDW94
BDW94A
BDW94B
BDW94C
-1
-1
-1
-1
mA
I
CBO
Collector cut-off
current
V
CB
= -45 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
V
CB
= -45 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
T
C
= 150C
T
C
= 150C
T
C
= 150C
T
C
= 150C
BDW94
BDW94A
BDW94B
BDW94C
BDW94
BDW94A
BDW94B
BDW94C
-0.1
-0.1
-0.1
-0.1
-5
-5
-5
-5
mA
I
EBO
Emitter cut-off
current
V
EB
= -5 V
I
C
= 0
-2
mA
h
FE
Forward current
transfer ratio
V
CE
= -3 V
V
CE
= -3 V
V
CE
= -3 V
I
C
= -3 A
I
C
= -10 A
I
C
= -5 A
(see Notes 3 and 4)
1000
100
750
20000
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= -20 mA
I
B
= -100 mA
I
C
= -5 A
I
C
= -10 A
(see Notes 3 and 4)
-2
-3
V
V
BE(sat)
Base-emitter
saturation voltage
I
B
= -20 mA
I
B
= -100 mA
I
C
= -5 A
I
C
= -10 A
(see Notes 3 and 4)
-2.5
-4
V
V
EC
Parallel diode
forward voltage
I
E
= -5 A
I
E
= -10 A
I
B
= 0
I
B
= 0
-2
-4
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
1.56
C/W
R
JA
Junction to free air thermal resistance
62.5
C/W
BDW94, BDW94A, BDW94B, BDW94C
PNP SILICON POWER DARLINGTONS
3
P R O D U C T
I N F O R M A T I O N
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-05
-20
-10
-10
h
FE
-
T
y
pi
c
a
l
D
C
Cu
r
r
e
n
t
G
a
in
50000
100
1000
10000
TCS135AE
T
C
= -40C
T
C
= 25C
T
C
= 100C
V
CE
= -3 V
t
p
= 300 s, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-05
-20
-10
-10
V
CE
(
s
a
t
)
- Co
l
l
e
c
to
r-E
m
i
tte
r
Sa
tu
ra
ti
o
n
Vo
l
t
a
g
e
- V
-30
-25
-20
-15
-10
-05
0
TCS135AG
T
C
= -40C
T
C
= 25C
T
C
= 100C
t
p
= 300 s, duty cycle < 2%
I
B
= I
C
/ 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-05
-20
-10
-10
V
BE
(
s
a
t
)
- Ba
s
e
-
Em
i
tte
r Sa
tu
ra
ti
o
n
Vo
l
t
a
g
e
- V
-30
-25
-20
-15
-10
-05
TCS135AI
T
C
= -40C
T
C
= 25C
T
C
= 100C
I
B
= I
C
/ 100
t
p
= 300 s, duty cycle < 2%
BDW94, BDW94A, BDW94B, BDW94C
PNP SILICON POWER DARLINGTONS
4
P R O D U C T
I N F O R M A T I O N
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
THERMAL INFORMATION
Figure 4.
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
to
t
-
M
a
x
i
m
u
m
P
o
w
e
r
D
i
ss
i
p
at
i
o
n
-
W
0
20
40
60
80
100
TIS130AA
BDW94, BDW94A, BDW94B, BDW94C
PNP SILICON POWER DARLINGTONS
5
P R O D U C T
I N F O R M A T I O N
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
1,23
1,32
4,20
4,70
1
2
3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2
VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version
1,
18.0
mm.
Version
2,
17.6
mm.
MDXXBE
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