BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
P R O D U C T
I N F O R M A T I O N
1
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with
BDX34, BDX34A, BDX34B, BDX34C and
BDX34D
70 W at 25C Case Temperature
10 A Continuous Collector Current
Minimum h
FE
of 750 at 3 V, 3 A
absolute maximum ratings at 25C case temperature (unless otherwise noted)
NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.56 W/C.
2. Derate linearly to 150C free air temperature at the rate of 16 mW/C.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
V
CBO
45
60
80
100
120
V
Collector-emitter voltage (I
B
= 0)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
V
CEO
45
60
80
100
120
V
Emitter-base voltage
V
EBO
5
V
Continuous collector current
I
C
10
A
Continuous base current
I
B
0.3
A
Continuous device dissipation at (or below) 25C case temperature (see Note 1)
P
tot
70
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 2)
P
tot
2
W
Operating free air temperature range
T
J
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Operating free-air temperature range
T
A
-65 to +150
C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
2
P R O D U C T
I N F O R M A T I O N
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 100 mA
I
B
= 0
(see Note 3)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
45
60
80
100
120
V
I
CEO
Collector-emitter
cut-off current
V
CE
= 30 V
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
V
CE
= 60 V
V
CE
= 30 V
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
V
CE
= 60 V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
T
C
= 100C
T
C
= 100C
T
C
= 100C
T
C
= 100C
T
C
= 100C
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
0.5
0.5
0.5
0.5
0.5
10
10
10
10
10
mA
I
CBO
Collector cut-off
current
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
T
C
= 100C
T
C
= 100C
T
C
= 100C
T
C
= 100C
T
C
= 100C
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
1
1
1
1
1
5
5
5
5
5
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V
I
C
= 0
10
mA
h
FE
Forward current
transfer ratio
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
I
C
= 4 A
I
C
= 4 A
I
C
= 3 A
I
C
= 3 A
I
C
= 3 A
(see Notes 3 and 4)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
750
750
750
750
750
V
BE(on)
Base-emitter
voltage
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
I
C
= 4 A
I
C
= 4 A
I
C
= 3 A
I
C
= 3 A
I
C
= 3 A
(see Notes 3 and 4)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
2.5
2.5
2.5
2.5
2.5
V
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 8 mA
I
B
= 8 mA
I
B
= 6 mA
I
B
= 6 mA
I
B
= 6 mA
I
C
= 4 A
I
C
= 4 A
I
C
= 3 A
I
C
= 3 A
I
C
= 3 A
(see Notes 3 and 4)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
2.5
2.5
2.5
2.5
2.5
V
V
EC
Parallel diode
forward voltage
I
E
= 8 A
I
B
= 0
4
V
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
3
P R O D U C T
I N F O R M A T I O N
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
1.78
C/W
R
JA
Junction to free air thermal resistance
62.5
C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
Turn-on time
I
C
= 3 A
V
BE(off)
= -3.5 V
I
B(on)
= 12 mA
R
L
= 10
I
B(off)
= -12 mA
t
p
= 20
s, dc 2%
1
s
t
off
Turn-off time
5
s
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
4
P R O D U C T
I N F O R M A T I O N
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
10
10
h
FE
-
T
y
p
i
c
a
l
D
C
C
u
rre
n
t
Ga
i
n
50000
100
1000
10000
TCS130AF
T
C
= -40C
T
C
= 25C
T
C
= 100C
V
CE
= 3 V
t
p
= 300 s, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
10
10
V
C
E
(
sat
)
- Co
l
l
e
c
to
r-Em
i
tte
r Sa
tu
ra
ti
o
n
Vo
l
t
a
g
e
- V
05
10
15
20
TCS130AH
T
C
= -40C
T
C
= 25C
T
C
= 100C
t
p
= 300 s, duty cycle < 2%
I
B
= I
C
/ 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
10
10
V
B
E
(
sat
)
- Ba
s
e
-E
m
i
t
t
e
r
Sa
tu
ra
ti
o
n
Vo
l
t
a
g
e
- V
05
10
15
20
25
30
TCS130AJ
T
C
= -40C
T
C
= 25C
T
C
= 100C
I
B
= I
C
/ 100
t
p
= 300 s, duty cycle < 2%
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
5
P R O D U C T
I N F O R M A T I O N
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
THERMAL INFORMATION
Figure 4.
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
to
t
-
Ma
xi
mu
m
P
o
w
e
r
D
i
s
s
i
p
at
i
o
n
-
W
0
10
20
30
40
50
60
70
80
TIS130AB
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