Ultra Low Power/High Speed CMOS SRAM
1M X 16 bit
BH616UV1610
BSI
R0201-BH616UV1610
Revision 1.0
Jul. 2005
1
n
FEATURES
Y
Wide V
CC
low operation voltage : 1.65V ~ 3.6V
Y
Ultra low power consumption :
V
CC
= 3.0V
Operation current : 5.0mA at 70ns at 25
O
C
1.5mA at 1MHz at 25
O
C
Standby current : 3uA at 25
O
C
V
CC
= 2.0V
Data retention current : 3uA at 25
O
C
Y
High speed access time :
-70
70ns at 1.8V at 85
O
C
Y
Automatic power down when chip is deselected
Y
Easy expansion with CE1, CE2 and OE options
Y
I/O Configuration x8/x16 selectable by LB and UB pin.
Y
Three state outputs and TTL compatible
Y
Fully static operation, no clock, no refreash
Y
Data retention supply voltage as low as 1.0V
n
DESCRIPTION
The BH616UV1610 is a high performance, ultra low power CMOS Static
Random Access Memory organized as 1,048,576 by 16 bits and
operates in a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with typical operating current of 1.5mA at
1MHz at 3.0V/25
O
C and maximum access time of 70ns at 1.8V/85
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE1), an active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BH616UV1610 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BH616UV1610 is made with two chips of 8Mbit SRAM by stacked
multi-chip-package.
The BH616UV1610 is available in 48-ball BGA package.
n
PRODUCT FAMILY
POWER CONSUMPTION
SPEED
(ns)
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PRODUCT
FAMILY
OPERATING
TEMPERATURE
V
CC
RANGE
V
CC
=1.8~3.6V
V
CC
=3.6V V
CC
=1.8V V
CC
=3.6V V
CC
=1.8V
PKG TYPE
+0
O
C to +70
O
C
70
20uA
15uA
10mA
7mA
BH616UV1610AI
-25
O
C to +85
O
C
1.65V ~ 3.6V
70
25uA
20uA
10mA
7mA
BGA-48-0608
n
PIN CONFIGURATIONS
n
BLOCK DIAGRAM
Brilliance Semiconductor, Inc.
reserves the right to modify document contents without notice.
Detailed product characteristic test report is available upon request and being accepted.
G
H
F
E
D
C
B
A
1
2
3
4
5
6
A9
A11
A10
NC
A12
A14
A13
A15
WE
DQ13
DQ5
DQ7
DQ6
A17
A16
A7
VSS
VCC
DQ12
DQ11
DQ4
DQ3
VSS
A5
OE
A3
A0
A6
A4
A1
A2
CE2
UB
DQ10
DQ1
CE1
DQ2
DQ0
48-ball BGA top view
LB
DQ8
DQ9
VSS
VCC
DQ14
DQ15
A18
A19
A8
Address
Input
Buffer
Row
Decoder
Memory Array
1024 x 16384
Column I/O
Write Driver
Sense Amp
Column Decoder
Address Input Buffer
A15
A16 A2 A1
Data
Input
Buffer
Control
DQ0
.
.
.
.
.
.
DQ15
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
16
16
16
16
10
1024
16384
1024
10
A19
Data
Output
Buffer
A13
CE2, CE1
WE
OE
UB
LB
V
CC
V
SS
A0
.
.
.
.
.
.
A14
A17
A18
BSI
BH616UV1610
R0201-BH616UV1610
Revision 1.0
Jul. 2005
2
n
PIN DESCRIPTIONS
Name
Function
A0-A19 Address Input
These 20 address inputs select one of the 1,048,576 x 16 bit in the RAM
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in standby power mode. The DQ pins will be in the high impedance
state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
LB and UB Data Byte Control Input
Lower byte and upper byte data input/output control pins.
DQ0-DQ15 Data Input/Output
Ports
16 bi-directional ports are used to read data from or write data into the RAM.
V
CC
Power Supply
V
SS
Ground
n
TRUTH TABLE
MODE
CE1
CE2
WE
OE
LB
UB
DQ0~DQ7 DQ8~DQ15 V
CC
CURRENT
H
X
X
X
X
X
High Z
High Z
I
CCSB
, I
CCSB1
X
L
X
X
X
X
High Z
High Z
I
CCSB
, I
CCSB1
Chip De-selected
(Power Down)
X
X
X
X
H
H
High Z
High Z
I
CCSB
, I
CCSB1
Output Disabled
L
H
H
H
X
X
High Z
High Z
I
CC
L
L
D
OUT
D
OUT
I
CC
H
L
High Z
D
OUT
I
CC
Read
L
H
H
L
L
H
D
OUT
High Z
I
CC
L
L
D
IN
D
IN
I
CC
H
L
X
D
IN
I
CC
Write
L
H
L
X
L
H
D
IN
X
I
CC
NOTES: H means V
IH
; L means V
IL
; X means don
'
t care (Must be V
IH
or V
IL
state)
BSI
BH616UV1610
R0201-BH616UV1610
Revision 1.0
Jul. 2005
3
n
ABSOLUTE MAXIMUM RATINGS
(1)
SYMBOL
PARAMETER
RATING
UNITS
V
TERM
Terminal Voltage with
Respect to GND
-0.5
(2)
to 4.6V
V
T
BIAS
Temperature Under
Bias
-40 to +125
O
C
T
STG
Storage Temperature
-60 to +150
O
C
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
20
mA
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
2.
2.0V in case of AC pulse width less than 30 ns
n
OPERATING RANGE
RANG
AMBIENT
TEMPERATURE
V
CC
Commercial
0
O
C to + 70
O
C
1.65V ~ 3.6V
Industrial
-25
O
C to + 85
O
C
1.65V ~ 3.6V
n
CAPACITANCE
(1)
(T
A
= 25
O
C, f = 1.0MHz)
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
C
IN
Input
Capacitance
V
IN
= 0V
10
pF
C
IO
Input/Output
Capacitance
V
I/O
= 0V
15
pF
1. This parameter is guaranteed and not 100% tested.
n
DC ELECTRICAL CHARACTERISTICS (T
A
= -25
O
C to +85
O
C)
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN.
TYP.
(1)
MAX.
UNITS
V
CC
Power Supply
1.65
--
3.6
V
V
CC
=1.8V
0.4
V
IL
Input Low Voltage
V
CC
=3.6V
-0.3
(2)
--
0.8
V
V
CC
=1.8V
1.4
V
IH
Input High Voltage
V
CC
=3.6V
2.0
--
V
CC
+0.3
(3)
V
I
IL
Input Leakage Current
V
IN
= 0V to V
CC
,
CE1 = V
IH
or CE2 = V
IL
--
--
1
uA
I
LO
Output Leakage Current
V
I/O
= 0V to V
CC
,
CE1 = V
IH
or CE2 = V
IL
or OE = V
IH
or
UB = LB = V
IH
--
--
1
uA
V
CC
= Max, I
OL
= 0.2mA
V
CC
=1.8V
0.2
V
OL
Output Low Voltage
V
CC
= Max, I
OL
= 2.0mA
V
CC
=3.6V
--
--
0.4
V
V
CC
= Min, I
OH
= -0.1mA
V
CC
=1.8V
V
CC
-0.2
V
OH
Output High Voltage
V
CC
= Min, I
OH
= -1.0mA
V
CC
=3.6V
2.4
--
--
V
V
CC
=1.8V
4.5
7
I
CC
Operating Power Supply
Current
CE1 = V
IL
and CE2 = V
IH
,
I
DQ
= 0mA, f = F
MAX
(4)
V
CC
=3.6V
--
5.0
10
mA
V
CC
=1.8V
1.0
1.5
I
CC1
Operating Power Supply
Current
CE1 = V
IL
and CE2 = V
IH
,
I
DQ
= 0mA, f = 1MHz
V
CC
=3.6V
--
1.5
2.0
mA
V
CC
=1.8V
0.5
I
CCSB
Standby Current
TTL
CE1 = V
IH
, or CE2 = V
IL
,
I
DQ
= 0mA
V
CC
=3.6V
--
--
1.0
mA
V
CC
=1.8V
3.0
20
I
CCSB1
(5)
Standby Current
CMOS
CE1
V
CC
-0.2V or CE2
0.2V,
V
IN
V
CC
-0.2V or V
IN
0.2V
V
CC
=3.6V
--
3.0
25
uA
1. Typical characteristics are at T
A
=25
O
C.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: V
CC
+1.0V in case of pulse width less than 20 ns.
4. F
MAX
=1/t
RC.
5. I
CCSB1(MAX.)
is 15uA/20uA at V
CC
=1.8V/3.6V and T
A
=0
O
C ~ 70
O
C.
BSI
BH616UV1610
R0201-BH616UV1610
Revision 1.0
Jul. 2005
4
n
DATA RETENTION CHARACTERISTICS (T
A
= -25
O
C to +85
O
C)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.
(1)
MAX.
UNITS
V
DR
V
CC
for Data Retention
CE1
V
CC
-0.2V or CE2
0.2V,
V
IN
V
CC
-0.2V or V
IN
0.2V
1.0
--
--
V
V
CC
=1.0V
1.0
7.0
I
CCDR
(3)
Data Retention Current
CE1
V
CC
-0.2V or CE2
0.2V,
V
IN
V
CC
-0.2V or V
IN
0.2V
V
CC
=2.0V
--
3.0
20
uA
t
CDR
Chip Deselect to Data
Retention Time
0
--
--
ns
t
R
Operation Recovery Time
See Retention Waveform
t
RC
(2)
--
--
ns
1. T
A
=25
O
C.
2. t
RC
= Read Cycle Time.
3. I
CCDR(MAX.)
is 6.0uA/15uA at V
CC
=1.0V/2.0V and T
A
=0
O
C ~ 70
O
C.
n
LOW V
CC
DATA RETENTION WAVEFORM (1) (CE1 Controlled)
n
LOW V
CC
DATA RETENTION WAVEFORM (2) (CE2 Controlled)
n
AC TEST CONDITIONS
(Test Load and Input/Output Reference)
Input Pulse Levels
V
CC
/ 0V
Input Rise and Fall Times
1V/ns
Input and Output Timing
Reference Level
0.5Vcc
t
CLZ1
, t
CLZ2
, t
BE
, t
OLZ
, t
CHZ1
,
t
CHZ2
, t
BDO
, t
OHZ
, t
WHZ
, t
OW
C
L
= 5pF+1TTL
Output Load
Others
C
L
= 30pF+1TTL
1. Including jig and scope capacitance.
n
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
MUST BE
STEADY
MUST BE
STEADY
MAY CHANGE
FROM
"
H
"
TO
"
L
"
WILL BE CHANGE
FROM
"
H
"
TO
"
L
"
MAY CHANGE
FROM
"
L
"
TO
"
H
"
WILL BE CHANGE
FROM
"
L
"
TO
"
H
"
DON
'
T CARE
ANY CHANGE
PERMITTED
CHANGE :
STATE UNKNOW
DOES NOT
APPLY
CENTER LINE IS
HIGH INPEDANCE
"
OFF
"
STATE
C
L
(1)
1 TTL
Output
ALL INPUT PULSES
90%
V
CC
GND
Rise Time:
1V/ns
Fall Time:
1V/ns
90%
10%
10%
Data Retention Mode
V
CC
t
CDR
V
CC
t
R
V
IH
V
IH
CE1
V
CC
- 0.2V
V
DR
1.0V
CE1
V
CC
CE2
Data Retention Mode
V
CC
t
CDR
V
CC
t
R
V
IL
V
IL
V
CC
V
DR
1.0V
CE2
0.2V
BSI
BH616UV1610
R0201-BH616UV1610
Revision 1.0
Jul. 2005
5
n
AC ELECTRICAL CHARACTERISTICS (T
A
= -25
O
C to +85
O
C)
READ CYCLE
CYCLE TIME : 70ns
JEDEC
PARAMETER
NAME
PARANETER
NAME
DESCRIPTION
MIN.
TYP.
MAX.
UNITS
t
AVAX
t
RC
Read Cycle Time
70
--
--
ns
t
AVQX
t
AA
Address Access Time
--
--
70
ns
t
E1LQV
t
ACS1
Chip Select Access Time
(CE1)
--
--
70
ns
t
E2LQV
t
ACS2
Chip Select Access Time
(CE2)
--
--
70
ns
t
BLQV
t
BA
Data Byte Control Access Time
(LB, UB)
--
--
70
ns
t
GLQV
t
OE
Output Enable to Output Valid
--
--
30
ns
t
E1LQX
t
CLZ1
Chip Select to Output Low Z
(CE1)
10
--
--
ns
t
E2LQX
t
CLZ2
Chip Select to Output Low Z
(CE2)
10
--
--
ns
t
BLQX
t
BE
Data Byte Control to Output Low Z
(LB, UB)
10
--
--
ns
t
GLQX
t
OLZ
Output Enable to Output Low Z
5
--
--
ns
t
E1HQZ
t
CHZ1
Chip Select to Output High Z
(CE1)
--
--
25
ns
t
E2HQZ
t
CHZ2
Chip Select to Output High Z
(CE2)
--
--
25
ns
t
BHQZ
t
BDO
Data Byte Control to Output High Z
(LB, UB)
--
--
25
ns
t
GHQZ
t
OHZ
Output Enable to Output High Z
--
--
25
ns
t
AVQX
t
OH
Data Hold from Address Change
10
--
--
ns
n
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
t
RC
t
OH
t
AA
D
OUT
ADDRESS
t
OH
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